Title: Atomic layer deposited Zr-Sn-Ti-O films using TiI.sub.4
Abstract: Various structures having a dielectric film containing Zr--Sn--Ti--O formed by atomic layer deposition using a TiI.sub.4 precursor and a method of fabricating structures having such a dielectric film produce the structures with a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO.sub.2. Dielectric films containing Zr--Sn--Ti--O formed by atomic layer deposition using TiI.sub.4 are thermodynamically stable such that the Zr--Sn--Ti--O will have minimal reactions with a silicon substrate or other structures during processing.
Patent Number: 7,410,917 Issued on 08/12/2008 to Ahn, et al.
| Inventors: |
Ahn; Kie Y. (Chappaqua, NY), Forbes; Leonard (Corvallis, OR) |
| Assignee: |
Micron Technology, Inc.
(Boise,
ID)
|
| Appl. No.:
|
11/214,693 |
| Filed:
|
August 29, 2005 |
Related U.S. Patent Documents
| | | | | |
|
| Application Number | Filing Date | Patent Number | Issue Date | |
| | 10309583 | Dec., 2002 | 6958302 | | |
|
|
| Current U.S. Class: |
438/785 ; 257/E21.129; 427/124 |
| Current International Class: |
H01L 21/31 (20060101) |
| Field of Search: |
438/785 427/124 257/E21.129
|
References Cited [Referenced By]
U.S. Patent Documents