Data latch circuit and electronic device Number:7,142,030 from the United States Patent and Trademark Office (PTO) owispatent The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the capacitor, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage.<H electronic, circuit, Data, latch, circ, 7142030.html, Patent, pto, 7142030

Title: Data latch circuit and electronic device

Abstract: The data latch circuit of the invention includes a means for short-circuiting an input terminal and an output terminal of an inverter and by connecting the input terminal to one electrode of a capacitor and sampling a data signal or a reference potential to the other electrode of the capacitor, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage.

Patent Number: 7,142,030 Issued on 11/28/2006 to Osame, et al.

Inventors: Osame; Mitsuaki (Kanagawa, JP), Anzai; Aya (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-Ken, JP)

Appl. No.: 10/724,365

Filed: December 1, 2003

Foreign Application Priority Data


Dec 03, 2002 [JP]			2002-351672

Current U.S. Class: 327/218 ; 327/208; 327/217; 327/94

Current International Class: H03K 3/12 (20060101)

Field of Search: 327/198,217,219,218,208,210,91,93-95,97,74,77-79 341/122,124,125

References Cited [Referenced By]

U.S. Patent Documents


4560890	December 1985	Masuda et al.
4633222	December 1986	Dingwall
5262685	November 1993	Demler et al.
5453757	September 1995	Date et al.
5648791	July 1997	Date et al.
6275210	August 2001	Maekawa
6628146	September 2003	Tam
6713324	March 2004	Shiba et al.
6809706	October 2004	Shimoda
6870895	March 2005	Osame et al.
6980191	December 2005	Nakamura et al.
2001/0035862	November 2001	Nakamura et al.
2002/0021295	February 2002	Koyama et al.
2002/0036625	March 2002	Nakamura
2002/0075211	June 2002	Nakamura
2003/0174115	September 2003	Washio et al.
2005/0134325	June 2005	Osame et al.

Foreign Patent Documents


0 510 696	Oct., 1992	EP
1056069	Nov., 2000	EP
1150274	Oct., 2001	EP
01-319322	Dec., 1989	JP
05-094159	Apr., 1993	JP
07-273616	Oct., 1995	JP
11-184432	Jul., 1999	JP
11-184440	Jul., 1999	JP
2000-339984	Dec., 2000	JP
2002-175040	Jun., 2002	JP
2002-287711	Oct., 2002	JP

Other References

International Preliminary Examination Report from Application No. PCT/JP03/15385 mailed May 11, 2004 and partial translation. cited by othe- r .
International Search Report from Application No. PCT/JP03/15385 mailed Mar. 30, 2004. cited by other.

Primary Examiner: Nguyen; Long
Attorney, Agent or Firm: Fish & Richardson P.C.

Claims

The invention claimed is:

1. A data latch circuit which samples a digital signal comprising: a capacitor having first and second electrodes; an inverter whose input terminal is connected to the first electrode; and a switch connected between the input terminal and an output terminal of the inverter, wherein the switch is turned ON and a first potential is input to the second electrode of the capacitor during a reset period, wherein the digital signal is input to the second electrode of the capacitor during a sampling period after the reset period, and wherein the first potential is one of a high level and a low level of the digital signal.

2. A data latch circuit which samples a digital signal comprising: a capacitor having first and second electrodes; an inverter whose input terminal is connected to the first electrode; a first switch connected between the input terminal and an output terminal of the inverter; and second and third switches connected to the second electrode, wherein the first switch and the second switch are turned ON to input a first potential to the second electrode of the capacitor during a reset period, wherein the third switch is turned ON to input the digital signal to the second electrode of the capacitor during a sampling period after the reset period, and wherein the first potential is one of a high level and a low level of the digital signal.

3. A data latch circuit which samples a digital signal comprising: a first capacitor having first and second electrodes; a second capacitor having third and fourth electrodes; an inverter whose input terminal is connected to the first electrode and the third electrode; and a switch connected between the input terminal and an output terminal of the inverter, wherein the switch is turned ON and a first potential is input to the second electrode of the first capacitor and a second potential is input to the fourth electrode of the second capacitor during a reset period, and wherein the digital signal is input to the second electrode of the first capacitor and to the fourth electrode of the second capacitor during a sampling period after the reset period.

4. A data latch circuit which samples a digital signal comprising: a first capacitor having first and second electrodes; a second capacitor having third and fourth electrodes; an inverter whose input terminal is connected to the first electrode and the third electrode; a first switch connected between the input terminal and an output terminal of the inverter; second and third switches connected to the second electrode; and fourth and fifth switches connected to the fourth electrode, wherein the first switch and the second switch are turned ON to input a first potential to the second electrode of the first capacitor while the fourth switch is turned ON to input a second potential to the fourth electrode of the second capacitor during a reset period, and wherein the third switch is turned ON to input the digital signal to the second electrode of the first capacitor while the fifth switch is turned ON to input the digital signal to the fourth electrode of the second capacitor during a sampling period after the reset period.

5. The data latch circuit according to claim 3, wherein the first potential is a potential of 1 or 0 as the digital signal.

6. The data latch circuit according to claim 4, wherein the first potential is a potential of 1 or 0 as the digital signal.

7. The data latch circuit according to claim 1, wherein the reset period is determined with a first sampling pulse from a first delayed flip-flop while the sampling period is determined with a second sampling pulse from a second delayed flip-flop.

8. The data latch circuit according to claim 2, wherein the reset period is determined with a first sampling pulse from a first delayed flip-flop while the sampling period is determined with a second sampling pulse from a second delayed flip-flop.

9. The data latch circuit according to claim 3, wherein the reset period is determined with a first sampling pulse from a first delayed flip-flop-while the sampling period is determined with a second sampling pulse from a second delayed flip-flop.

10. The data latch circuit according to claim 4, wherein the reset period is determined with a first sampling pulse from a first delayed flip-flop-while the sampling period is determined with a second sampling pulse from a second delayed flip-flop.

11. The data latch circuit according to claim 1, wherein an amplitude between the high level and the low level of the digital signal is smaller than an amplitude of an output of the inverter.

12. The data latch circuit according to claim 2, wherein an amplitude between the high level and the low level of the digital signal is smaller than an amplitude of an output of the inverter.

13. The data latch circuit according to claim 3, wherein an amplitude between the first potential and the second potential is smaller than an amplitude of an output of the inverter.

14. The data latch circuit according to claim 4, wherein an amplitude between the first potential and the second potential is smaller than an amplitude of an output of the inverter.

15. The data latch circuit according to claim 1, wherein the data latch circuit is formed by using thin film transistors.

16. The data latch circuit according to claim 2, wherein the data latch circuit is formed by using thin film transistors.

17. The data latch circuit according to claim 3, wherein the data latch circuit is formed by using thin film transistors.

18. The data latch circuit according to claim 4, wherein the data latch circuit is formed by using thin film transistors.

19. An electronic device having the data latch circuit according to claim 1, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

20. An electronic device having the data latch circuit according to claim 2, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

21. An electronic device having the data latch circuit according to claim 3, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

22. An electronic device having the data latch circuit according to claim 4, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

23. A semiconductor device comprising: a data latch circuit which samples a digital signal, wherein the data latch circuit comprises a capacitor having first and second electrodes, an inverter whose input terminal is connected to the first electrode, and a switch connected between the input terminal and an output terminal of the inverter, wherein the switch is turned ON and a first potential is input to the second electrode of the capacitor during a reset period, wherein the digital signal is input to the second electrode of the capacitor during a sampling period after the reset period, and wherein the first potential is one of a high level and a low level of the digital signal.

24. The semiconductor device according to claim 23, wherein an amplitude between the high level and the low level of the digital signal is smaller than an amplitude of an output of the inverter.

25. The semiconductor device according to claim 23, wherein the data latch circuit is formed by using thin film transistors.

26. An electronic device having the semiconductor device according to claim 23, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

27. A semiconductor device comprising: a data latch circuit which samples a digital signal, wherein the data latch circuit comprises a capacitor having first and second electrodes, an inverter whose input terminal is connected to the first electrode, a first switch connected between the input terminal and an output terminal of the inverter, and second and third switches connected to the second electrode, wherein the first switch and the second switch are turned ON to input a first potential to the second electrode of the capacitor during a reset period, wherein the third switch is turned ON to input the digital signal to the second electrode of the capacitor during a sampling period after the reset period, and wherein the first potential is one of a high level and a low level of the digital signal.

28. The semiconductor device according to claim 27, wherein an amplitude between the high level and the low level of the digital signal is smaller than an amplitude of an output of the inverter.

29. The semiconductor device according to claim 27, wherein the data latch circuit is formed by using thin film transistors.

30. An electronic device having the semiconductor device according to claim 27, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

31. A semiconductor device comprising: a data latch circuit which samples a digital signal, wherein the data latch circuit comprises a first capacitor having first and second electrodes, a second capacitor having third and fourth electrodes, an inverter whose input terminal is connected to the first electrode and the third electrode, and a switch connected between the input terminal and an output terminal of the inverter, wherein the switch is turned ON and a first potential is input to the second electrode of the first capacitor and a second potential is input to the fourth electrode of the second capacitor during a reset period, and wherein the digital signal is input to the second electrode of the first capacitor and to the fourth electrode of the second capacitor during a sampling period after the reset period.

32. The semiconductor device according to claim 31, wherein the first potential is a potential of 1 or 0 as the digital signal.

33. The semiconductor device according to claim 31, wherein an amplitude between the first potential and the second potential is smaller than an amplitude of an output of the inverter.

34. The semiconductor device according to claim 31, wherein the data latch circuit is formed by using thin film transistors.

35. An electronic device having the semiconductor device according to claim 31, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

36. A semiconductor device comprising: a data latch circuit which samples a digital signal, wherein the data latch circuit comprises, a first capacitor having first and second electrodes, a second capacitor having third and fourth electrodes, an inverter whose input terminal is connected to the first electrode and the third electrode, a first switch connected between the input terminal and an output terminal of the inverter, second and third switches connected to the second electrode, and fourth and fifth switches connected to the fourth electrode, wherein the first switch and the second switch are turned ON to input a first potential to the second electrode of the first capacitor while the fourth switch is turned ON to input a second potential to the fourth electrode of the second capacitor during a reset period, and wherein the third switch is turned ON to input the digital signal to the second electrode of the first capacitor while the fifth switch is turned ON to input the digital signal to the fourth electrode of the second capacitor during a sampling period after the reset period.

37. The semiconductor device according to, claim 36, wherein the first potential is a potential of 1 or 0 as the digital signal.

38. The semiconductor device according to claim 36, wherein an amplitude between the first potential and the second potential is smaller than an amplitude of an output of the inverter.

39. The semiconductor device according to claim 36, wherein the data latch circuit is formed by using thin film transistors.

40. An electronic device having the semiconductor device according to claim 36, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

41. A semiconductor device comprising: a shift register having at least a first circuit and a second circuit; at least first and second data latch circuits which sample a digital signal, wherein the at least first and second data latch circuits are connected to the shift register, wherein each of the first and the second data latch circuits comprises a capacitor having first and second electrodes, an inverter whose input terminal is connected to the first electrode; and a switch connected between the input terminal and an output terminal of the inverter, wherein the switch is turned ON and a first potential is input to the second electrode of the capacitor during a reset period, wherein the digital signal is input to the second electrode of the capacitor during a sampling period after the reset period, and wherein the first potential is one of a high level and a low level of the digital signal.

42. The semiconductor device according to claim 41, wherein the reset period is determined with a first sampling pulse from the first circuit of the shift register while the sampling period is determined with a second sampling pulse from the second circuit of the shift register.

43. The semiconductor device according to claim 41, wherein an amplitude between the high level and the low level of the digital signal is smaller than amplitude of an output of the inverter.

44. The semiconductor device according to claim 41, wherein the first and the second data latch circuits are formed by using thin film transistors.

45. An electronic device having the semiconductor device according to claim 41, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

46. A semiconductor device comprising: a shift register having at least a first circuit and a second circuit; at least first and second data latch circuits which sample a digital signal, wherein the at least first and second data latch circuits are connected to the shift register, wherein each of the first and the second data latch circuits comprises a capacitor having first and second electrodes, an inverter whose input terminal is connected to the first electrode, a first switch connected between the input terminal and an output terminal of the inverter, and second and third switches connected to the second electrode, wherein the first switch and the second switch are turned ON to input a first potential to the second electrode of the capacitor during a reset period, wherein the third switch is turned ON to input the digital signal to the second electrode of the capacitor during a sampling period after the reset period, and wherein the first potential is one of a high level and a low level of the digital signal.

47. The semiconductor device according to claim 46, wherein the reset period is determined with a first sampling pulse from the first circuit of the shift register while the sampling period is determined with a second sampling pulse from the second circuit of the shift register.

48. The semiconductor device according to claim 46, wherein an amplitude between the high level and the low level of the digital signal is smaller than an amplitude of an output of the inverter.

49. The semiconductor device according to claim 46, wherein the first and the second data latch circuits are formed by using thin film transistors.

50. An electronic device having the semiconductor device according to claim 46, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

51. A semiconductor device comprising: a shift register having at least a first circuit and a second circuit; at least first and second data latch circuits which sample a digital signal, wherein the at least first and second data latch circuits are connected to the shift register, wherein each of the first and the second data latch circuits comprises a first capacitor having first and second electrodes, a second capacitor having third and fourth electrodes, an inverter whose input terminal is connected to the first electrode and the third electrode, and a switch connected between the input terminal and an output terminal of the inverter, wherein the switch is turned ON and a first potential is input to the second electrode of the first capacitor and a second potential is input to the fourth electrode of the second capacitor during a reset period, and wherein the digital signal is input to the second electrode of the first capacitor and to the fourth electrode of the second capacitor during a sampling period after the reset period.

52. The semiconductor device according to claim 51, wherein the first potential is a potential of 1 or 0 as the digital signal.

53. The semiconductor device according to claim 51, wherein the reset period is determined with a first sampling pulse from the first circuit of the shift register while the sampling period is determined with a second sampling pulse from the second circuit of the shift register.

54. The semiconductor device according to claim 51, wherein an amplitude between the first potential and the second potential is smaller than an amplitude of an output of the inverter.

55. The semiconductor device according to claim 51, wherein the first and the second data latch circuits are formed by using thin film transistors.

56. An electronic device having the semiconductor device according to claim 51, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

57. A semiconductor device comprising: a shift register having at least a first circuit and a second circuit at least first and second data latch circuits which sample a digital signal, wherein the at least first and second data latch circuits are connected to the shift register, wherein each of the first and the second data latch circuits comprises a first capacitor having first and second electrodes, a second capacitor having third and fourth electrodes, an inverter whose input terminal is connected to the first electrode and the third electrode, a first switch connected between the input terminal and an output terminal of the inverter, second and third switches connected to the second electrode, and fourth and fifth switches connected to the fourth electrode, wherein the first switch and the second switch are turned ON to input a first potential to the second electrode of the first capacitor while the fourth switch is turned ON to input a second potential to the fourth electrode of the second capacitor during a reset period, and wherein the third switch is turned ON to input the digital signal to the second electrode of the first capacitor while the fifth switch is turned ON to input the digital signal to the fourth electrode of the second capacitor during a sampling period after the reset period.

58. The semiconductor device according to claim 57, wherein the first potential is a potential of 1 or 0 as the digital signal.

59. The semiconductor device according to claim 57, wherein the reset period is determined with a first sampling pulse from the first circuit of the shift register while the sampling period is determined with a second sampling pulse from the second circuit of the shift register.

60. The semiconductor device according to claim 57, wherein an amplitude between the first potential and the second potential is smaller than an amplitude of an output of the inverter.

61. The semiconductor device according to claim 57, wherein the first and the second data latch circuits are formed by using thin film transistors.

62. An electronic device having the semiconductor device according to claim 57, wherein the electronic device is selected from the group consisting of a display, a mobile computer, a game machine, a mobile phone, a navigation system, and a camera.

Description

TECHNICAL FIELD

The present invention relates to a data latch circuit which samples digital signals, and the present invention relates to an active matrix display device using the data latch circuit in a portion of a driver circuit. In addition, the invention relates to an electronic device using the active matrix display device.

BACKGROUND ART

In recent years, development of active matrix display devices such as a liquid crystal display device and a light emitting device has been advancing in response to the demand for its application to mobile devices and the like. In particular, technologies for integrally forming pixel circuits and driver circuits (hereinafter collectively referred to as an `internal circuit`) using thin film transistors (Thin Film Transistors; TFTs) formed of polycrystalline semiconductors (poly-Si; polysilicon) formed on an insulator are actively developed. The internal circuit includes a source signal line driver circuit, a gate signal line driver circuit or the like. These driver circuits or the like control the pixel circuits which are arranged in matrix.

In addition, the internal circuit is connected to a controller IC or the like (hereinafter referred to as an `external circuit`) through an FPC (Flexible Printed Circuit) and the operation is controlled. Generally, a drive voltage (namely, amplitude of a signal) of an IC used as an external circuit is lower than a drive voltage of an internal circuit in view of reduction in power consumption. At present, an IC which operates at a voltage of 3.3 V is typically used as an external circuit, while a drive voltage of an internal circuit is at 10 V, which is higher as compared to that of the external circuit. Therefore, it is necessary in the case of inputting a signal at 3.3 V from the external circuit to the internal circuit that the amplitude of the signal is converted with a level shift circuit or the like so as to be at around 10 V.

However, in the case of level shifting in the external circuit, such problems arise as an increase of components such as a level shift IC and a power supply IC and an increase in the power consumption. On the other hand, in the case of level shifting in the internal circuit before inputting to a shift register, a data latch circuit or the like, such problems arise as an increase in a layout area and the power consumption or the difficulty of high frequency operation. Therefore, it is required a method for directly inputting a signal having an amplitude of a low voltage from an external circuit to a shift register, a data latch circuit or the like which compose a driver circuit of the internal circuit to obtain an accurate operation (this method is hereinafter referred to as `low voltage drive`).

As a driving method of an active matrix display device, there are a digital drive method and an analog drive method. In the case of using the digital drive method, a data latch circuit which samples digital video signals in sequence according to sampling pulses from a shift register is required in the a source signal line driver circuit which compose a internal circuit.

Among data latch circuits, there is the one which deals with an input of a low voltage signal (refer to the following Patent Document 1.).

(Patent Document 1: Japanese Patent Laid-Open No. Hei11-184440)

However, the data latch circuit which deal with an input of a low voltage signal may malfunction due to the influence of variations in the TFT characteristics.

Now, a general conventional data latch circuit is shown in FIG. 2(A). The data latch circuit includes a clocked inverter 2005 and an inverter 2006. The clocked inverter 2005 includes P-channel TFTs 2001 and 2002 and N-channel TFTs 2003 and 2004 all connected in series. The gate electrode of the P-channel TFT 2001 is input with a sampling pulse (LAT) from a shift register while the source electrode have a connecting structure such that a power supply VDD is supplied. The gate electrode of the N-channel TFT 2004 is input with an inverted pulse (LATB) of the sampling pulse (LAT) while the source electrode have a connecting structure such that a power supply VSS is supplied. The gate electrodes of the P-channel TFT 2002 and the N-channel TFT 2003 are input with a digital signal (DATA). In addition, the drain electrodes of the P-channel TFT 2002 and the N-channel TFT 2003 are connected to the inverter 2006.

FIG. 2(B) is a timing chart of the conventional data latch circuit in FIG. 2(A). Operation of the conventional data latch circuit is described with reference to FIGS. 2(A) and 2(B). It should be noted that a digital signal (hereinafter referred to as a `data signal`) to be input has a digital format, that is a signal having a potential representing `1` and a potential representing `0`. In this specification, the level of the potential representing `1` is referred to as `H level` and a potential representing `0` is referred to as `L level` in any case, regardless of the potential. The potential level satisfies L level<H level unless specially described.

First, in a period T1, the sampling pulse (LAT) at L level is input from a shift register. Then, the LAT is at L level and the LATB is at H level, turning ON the P-channel TFT 2001 and the N-channel TFT 2004. At this time, when the DATA is at H level, the P-channel TFT 2002 is turned OFF while the N-channel TFT 2003 is turned ON, thus the clocked inverter 2005 outputs VSS. On the other hand, when the DATA is at L level, the P-channel TFT 2002 is turned ON while the N-channel TFT 2003 is turned OFF, thus the clocked inverter 2005 outputs VDD.

(Problems to be Solved by the Invention)

In the conventional data latch circuit, its drive is described with reference to FIGS. 2A and 2B in the case of performing low voltage drive, that is the case of directly inputting the digital signal DATA from an external circuit. It is assumed here that VSS is -2 V, VDD is 5 V, H level each of LAT and LATB is 5 V, L level is -2 V, and H level of DATA is 3V, and L level is at 0 V.

First, in the period T1, a sampling pulse, LAT is input from a shift register. Then, the LAT is at L level (-2V) while the LATB is at H level (5V), thereby turning ON the P-channel TFT 2001 and the N-channel 2004. At this time, when the DATA is at H level (3V), the P-channel TFT 2002 is turned OFF while the N-channel TFT 2003 is turned ON. Thus, the clocked inverter 2005 outputs VSS. At this time, however, if the threshold voltage |V.sub.TH| of the P-channel TFT 2002 is 2 V or less, the P-channel TFT 2002 is incidentally turned ON and thus a leakage current flows.

Furthermore, the characteristics of the P-channel TFT 2002 and the N-channel TFT, in particular, the threshold characteristics vary. As a result, when the ON current of the P-channel TFT 2002 at |V.sub.gs|=2 V is larger than the ON current of the N-channel TFT 2003 at |V.sub.gs|=5 V, the logic is inverted, which causes the output of the clocked inverter 2005 to be at VDD, not VSS.

On the other hand, when the DATA is at L level (0V) and when the |V.sub.TH| of the N-channel TFT 2003 is 2 V or less, the N-channel TFT 2003 is incidentally turned ON and thus a leakage current flows. Furthermore, when the ON current of the N-channel TFT 2003 at |V.sub.gs|=2 V is larger than the ON current of the P-channel TFT 2002 at |V.sub.gs|=5 V, the logic is inverted, which causes the output of the clocked inverter 2005 to be at VSS, not VDD.

The invention is made in view of the foregoing problems and provides a data latch circuit which is hardly influenced by variations in the TFT characteristics, and capable of operating with low power consumption and high frequency.

DISCLOSURE OF THE INVENTION

(Means for Solving the Problem)

The data latch circuit of the invention having an inverter which determines a data signal to be at H level or at L level is constructed such that a means for short-circuiting an input terminal and an output terminal of the inverter is provided, the input terminal of the inverter is connected to one electrode of a capacitor, and the other electrode of the capacitor samples a data signal or a reference potential.

By firstly, short-circuiting the input terminal and the output terminal of the inverter, the input terminal of the inverter and the one terminal of the capacitor are set at the threshold potential of the inverter, while the other electrode of the capacitor is set at the reference potential.

Then, a data signal is sampled to the other electrode of the capacitor which isset at the reference potential. Accordingly, the potential of the input terminal of the inverter which is connected through the capacitor changes higher or lower from the threshold potential, and thus it becomes possible to determine the data signal to be at H level or at L level.

Therefore, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of the data signal is small relatively to the width of the power supply voltage.

The structure of the invention is described below.

The data latch circuit of the invention which samples a digital signal includes a capacitor means having first and second electrodes, an inverter whose input terminal is connected to the first electrode, and a switch connected between the input terminal and an output terminal of the inverter, and is characterized in that the switch is turned ON to input a first potential to the second electrode of the capacitor means during a reset period, and the digital signal is input to the second electrode of the capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a capacitor means having first and second electrodes, an inverter whose input terminal is connected to the first electrode, a first switch connected between the input terminal and an output terminal of the inverter, and second and third switches connected to the second electrode, and the data latch circuit is characterized in that the first switch and the second switch are turned ON to input a first potential to the second electrode of the capacitor means during a reset period, and the third switch is turned ON to input the digital signal to the second electrode of the capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a capacitor means having first and second electrodes, a first inverter whose input terminal is connected to the first electrode, a switch connected between the input terminal and an output terminal of the first inverter, a second inverter whose input terminal is connected to the output terminal of the first inverter, and a clocked inverter whose output terminal and input terminal are connected to the input terminal and an output terminal of the second inverter respectively, and is characterized in that the switch is turned ON to input a first potential to the second electrode of the capacitor means during a reset period, and the digital signal is input to the second electrode of the capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a capacitor means having first and second electrodes, a first inverter whose input terminal is connected to the first electrode, a first switch connected between the input terminal and an output terminal of the first inverter, second and third switches connected to the second electrode, a second inverter whose input terminal is connected to the output terminal of the first inverter, and a clocked inverter whose output terminal and input terminal are connected to the input terminal and an output terminal of the second inverter respectively, and is characterized in that the first switch and the second switch are turned ON to input a first potential to the second electrode of the capacitor means during a reset period, and the third switch is turned ON to input the digital signal to the second electrode of the capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a capacitor means having first and second electrodes, a first inverter whose input terminal is connected to the first electrode, a switch connected between the input terminal and an output terminal of the first inverter, a second inverter whose input terminal is connected to the output terminal of the first inverter, and a clocked inverter whose output terminal and input terminal are connected to the input terminal and the output terminal of the first inverter respectively, and is characterized in that the switch is turned ON to input a first potential to the second electrode of the capacitor means during a reset period, and the digital signal is input to the second electrode of the capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a capacitor means having first and second electrodes, a first inverter whose input terminal is connected to the first electrode, a first switch connected between the input terminal and an output terminal of the first inverter, second and third switches connected to the second electrode, a second inverter whose input terminal is connected to the output terminal of the first inverter, and a clocked inverter whose output terminal and input terminal are connected to the input terminal and the output terminal of the first inverter respectively, and is characterized in that the first switch and the second switch are turned ON to input a first potential to the second electrode of the capacitor means during a reset period, and the third switch is turned ON to input the digital signal to the second electrode of the capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a first capacitor means having first and second electrodes, a second capacitor means having third and fourth electrodes, an inverter whose input terminal is connected to the first electrode and the third electrode, and a switch connected between the input terminal and an output terminal of the inverter, and is characterized in that the switch is turned ON to input a first potential to the second electrode of the first capacitor means and to input a second potential to the fourth electrode of the third capacitor means during a reset period, and the digital signal is input to the second electrode of the first capacitor means and to the fourth electrode of the second capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a first capacitor means having first and second electrodes, a second capacitor means having third and fourth electrodes, an inverter whose input terminal is connected to the first electrode and the third electrode, a first switch connected between the input terminal and an output terminal of the inverter, second and third switches connected to the second electrode, and fourth and fifth switches connected to the fourth electrode, and is characterized in that the switch and the second switch are turned ON to input a first potential to the second electrode of the first capacitor means while the fourth switch is turned ON to input a second potential to the fourth electrode of the third capacitor means during a reset period, and the third switch is turned ON to input the digital signal to the second electrode of the first capacitor means while the fifth switch is turned ON to input the digital signal to the fourth electrode of the second capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a first capacitor means having first and second electrodes, a second capacitor means having third and fourth electrodes, a first inverter whose input terminal is connected to the first electrode and whose output terminal is connected to the third electrode, a first switch connected between the input terminal and the output terminal of the first inverter, a third capacitor means having fifth and sixth electrodes, a fourth capacitor means having seventh and eighth electrodes, a second inverter whose input terminal is connected to the fifth electrode and whose output terminal is connected to the seventh electrode, a second switch connected between the input terminal and the output terminal of the second inverter, and a third inverter whose input terminal is connected to the fourth and eighth electrodes, and a third switch connected between the input terminal and an output terminal of the third inverter, and is characterized in that the first and second switches are turned ON to input a first potential to the second electrode of the first capacitor means and to input a second potential to the fourth electrode of the third capacitor means during a reset period, and the digital signal is input to the second electrode of the first capacitor means and to the fourth electrode of the second capacitor means during a sampling period after the reset period.

The data latch circuit of the invention which samples a digital signal includes a first capacitor means having first and second electrodes, a second capacitor means having third and fourth electrodes, a first inverter whose input terminal is connected to the first electrode and whose output terminal is connected to the third electrode, a first switch connected between the input terminal and the output terminal of the first inverter, a third capacitor means having fifth and sixth electrodes, a fourth capacitor means having seventh and eighth electrodes, a second inverter whose input terminal is connected to the fifth electrode and whose output terminal is connected to the seventh electrode, a second switch connected between the input terminal and the output terminal of the second inverter, a third inverter whose input terminal is connected to the fourth and the eighth electrodes, a third switch connected between the input terminal and the output terminal of the third inverter, and a fifth capacitor connected to the first electrode and the fifth electrode, and is characterized in that the first and second switches are turned ON to input a first potential to the second electrode of the first capacitor means and to input a second potential to the fourth electrode of the third capacitor means during a reset period, and the digital signal is input to the second electrode of the first capacitor means and to the fourth electrode of the second capacitor means during a sampling period after the reset period.

The first potential may be a potential of 1 or a potential of 0 as the digital signal.

It may possible to determine the reset period with a sampling pulse from a shift register of the preceding stage while determining the sampling period with a sampling pulse from a shift register of the present stage.

The amplitude of the digital signal may be set comparatively smaller than the width of a power supply voltage which is used for the data latch circuit.

An output pulse from the shift register of the preceding stage may be used for a control terminal of the clocked inverter.

In addition, the data latch circuit may be formed by using thin film transistors.

(Effect of the Invention)

According to the data latch circuit of the invention, an accurate operation can be obtained without being influenced by variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage. Therefore, signals from an external circuit are not required to be level shifted, and thus reduction in power consumption, layout area and cost can be achieved.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 are diagrams showing an embodiment mode of the invention.

FIG. 2 are diagrams showing a conventional data latch circuit.

FIG. 3 are diagrams showing the V.sub.IN-V.sub.OUT characteristics of a general inverter.

FIG. 4 is a schematic diagram of an external circuit and a display panel.

FIG. 5 is a diagram showing a configuration of a source signal line driver circuit.

FIG. 6 are diagrams showing an embodiment mode of the invention.

FIG. 7 is a diagram showing an embodiment mode of the invention.

FIG. 8 are diagrams showing an embodiment mode of the invention.

FIG. 9 are views of electronic devices to which the invention can be applied.

FIG. 10 are diagrams showing a general clocked inverter.

BEST MODE FOR CARRYING OUT THE INVENTION

Embodiment Modes of the invention are described below.

(Embodiment Mode 1)

FIG. 1(A) shows a configuration of a data latch circuit of this embodiment mode.

The data latch circuit of this embodiment mode includes a data sampling switch 1001, a reference switch 1002, a switch 1003 for setting the threshold value, a capacitor means 1004 and a correction inverter 1005. In the data latch circuit of this embodiment mode, a circuit block including the data sampling switch 1001, the reference switch 1002 and the capacitor means 1004 is denoted by `block x`. In addition, an inverter 1006 may be provided if necessary.

ON/OFF of the data sampling switch 1001 is controlled by a LAT. DATA to be input is input to a connecting node (hereinafter referred to as a `node a`) of the reference switch 1002 and a second electrode of the capacitor means 1004. ON/OFF of the reference switch 1002 is controlled by a LAT-1. The reference switch 1002 samples a first potential (referred to as a `reference potential` herein), and outputs the reference potential to a connecting node of the data sampling switch 1001 and the second electrode of the capacitor means 1004, namely the node a. An input terminal and an output terminal of the correction inverter 1005 are electrically connected through the switch 1003 for setting the threshold value. Connecting nodes between the input terminal of the correction inverter 1005 and the switch 1003 for setting the threshold value and between the output terminal thereof and the switch 1003 for setting the threshold value are referred to as a `node b` and a `node c` respectively. ON/OFF of the switch 1003 for setting the threshold value is controlled by the LAT-1. The correction inverter 1005 outputs data to the inverter 1006 which is connected to the node c.

FIG. 1(B) is a timing chart of the data latch circuit of this embodiment mode. Operation is described in the case where the data latch circuit of this embodiment mode is driven at a low voltage with reference to FIG. 1(A) and FIG. 1(B). It is assumed in this embodiment mode that VSS is -2 V, VDD is 5 V, H level of each of LAT, LATB, LAT-1 and LAT-1B is 5 V while L level thereof is -2 V, H level of DATA is 3 V while L level thereof is 0 V, and a reference potential is 1.5 V which is an intermediate potential between the L level and the H level of the DATA. It is preferable that the LAT which is input during a period T1 does not overlap with the pulse LAT-1 which is input during a period T2.

First, a reset operation is performed in the period T1. A sampling pulse LAT-1 (5 V) is input from a shift register of the preceding stage to the present data latch circuit, whereby the reference switch 1002 and the switch 1003 for setting the threshold value are turned ON. As a result, the node a is at a reference potential (1.5 V). Since the potential of the node c is feedbacked, the potential of the node b become unchanged, and the potential of the node b is at the threshold potential of the correction inverter 1005 (assumed to be 2 V here).

Subsequently, the period T2 starts, in which the present data latch circuit determines the input DATA to be at H level or at L level. The sampling pulse LAT (5 V) from the shift register is input to the present data latch circuit, whereby the data sampling switch 1001 is turned ON. When the input DATA is at H level (3 V), the potential of the node a changes from 1.5 V to 3 V. Since potential difference between both ends of the capacitor means 1004 is held, the potential of the node b changes by around the amount of voltage change at the node a. Accordingly, the potential of the node b is raised from 2 V by around 1.5 V, reaching around 3.5 V.

FIGS. 3 show the V.sub.IN (input signal voltage)-V.sub.OUT (output signal voltage) characteristics of a general inverter. As shown in FIGS. 3, when V.sub.IN changes higher or lower than the threshold value even by a small amount, V.sub.OUT draws closer to VDD or VSS to a large degree.

Since the node b is set at the threshold potential of the correction inverter 1005 in the period T1, the node c sensitively reacts to the change in potential of the node b. In this case, as the potential of the node b is raised from 2 V to around 3.5 V, the potential of the node c draws closer to VSS to a large degree. The potential of the node c is adjusted by the inverter 1006, and VDD (H level) is output to the output OUT.

On the other hand, when the DATA in the period T2 is at L level (0 V), the potential of the node a drops from 1.5 V to 0 V, and the potential of the node b drops from 2 V by around 1.5 V, reaching around 0.5 V. In this manner, since the potential of the node b drops from the threshold potential, the potential of the node c draws closer to VDD to a large degree. The potential of the node c is further adjusted by the inverter 1006, and VSS (L level) is output to the output OUT.

In addition, in the case where the reference potential is a fixed potential, it is ideally an intermediate potential of an amplitude of the data signal (DATA here), however, it is not necessarily the intermediate potential in a strict sense. The reference potential can be changed to a degree within the amplitude of the data signal while being different from the highest potential or the lowest potential of the data signal.

Alternatively, an inverted signal of the data signal DATA may be input as a reference potential after shifting it forth by one data. In this case, when the DATA is at H level (3 V) for example, the node a is at L level (0 V) in the reset period T1, and when the DATA at H level (3 V) is input in the sampling period T2, the node a and the node b change by around 3 V, which facilitate the accurate operation of the correction inverter 1005. Even when the DATA is at L level (0 V), the node a is at H level (3 V) in the reset period T1 and the DATA at L level (0 V) is input in the sampling period T2. Therefore, the node a and the node b change by around 3 V in a similar manner.

In the data latch circuit, as described in this embodiment mode, the threshold potential of the inverter which outputs after determining the data signal DATA to be at H level or at L level is obtained in advance, and the data signal is determined to be at H level or L level based on its change whether being higher or lower than the threshold potential. Thus, an accurate operation can be obtained without being influenced by the threshold changes due to variations in the TFT characteristics even when the amplitude of an input signal is small relatively to the width of a power supply voltage. Therefore, low power consumption and high frequency operation are achieved. In particular, it is preferable that the invention is applied to a data latch circuit using polysilicon TFTs that have large variations in the TFT characteristics.

In addition, as for a crystallization method in the manufacture of the polysilicon TFTs according to the invention, laser crystallization, thermal crystallization using RTA, an annealing furnace, thermal crystallization using a metal element which facilitates the crystallization, or combination of these crystallization methods can be employed.

(Embodiment Mode 2)

In the case of using the data latch circuit shown in FIG. 1(A), holding may be carried out by using a clocked inverter 6002 or the like, or holding may be carried out by using a capacitor means 6003 or the like as shown in FIGS. 6(A) and 6(B). As for the clocked inverter 6002, a general clocked inverter can be employed.

The general clocked inverter is shown in FIG. 10. A clocked inverter 10001 includes a first P-channel TFT 10002, a second P-channel TFT 10003, a first N-channel TFT 10004 and a second N-channel TFT 10005 all connected in series. It is assumed that a terminal which inputs to the gate electrode of the first P-channel TFT 10002 is a control terminal 1, a terminal which inputs to the gate electrodes of the second P-channel TFT 10003 and the first N-channel TFT 10004 is an input terminal, a terminal which inputs to the gate electrode of the second N-channel TFT 10005 is a control terminal 2, and a connecting terminal of the second P-channel TFT 10003 and the first N-channel TFT 10004 is an output terminal.

FIG. 6(A) corresponds to FIG. 1(A) additionally provided with the capacitor means 6003 and the clocked inverter 6002. The clocked inverter 6002 is connected to an inverter 6001 in loop configuration. A holding pulse HOLD is input to a control terminal 1 of the clocked inverter 6002 while an inverted pulse HOLDB of the HOLD is input to a control terminal 2 thereof. The rest of the components are similar to FIG. 1(A).

FIG. 6(B) corresponds to FIG. 1(A) additionally provided with a clocked inverter 6102. The clocked inverter 6102 is connected to a correction inverter 6101 in loop configuration. A holding pulse HOLD is input to a control terminal 1 of the clocked inverter 6102 while an inverted pulse HOLDB of the HOLD is input to a control terminal 2 thereof. The rest of the components are similar to FIG. 1(A).

The HOLD pulse is preferably a pulse such as 6201 and 6202 shown in the timing chart in FIG. 6(C). An output pulse of a shift register may be employed for such pulse. As for the operation, after a sampling period T2 terminates, the clocked inverter 6002 or 6102 is turned ON, and then a holding operation starts.

By carrying out holding using the clocked inverter or the like as in this embodiment mode, H level and L level can be held accurately for a predetermined period.

(Embodiment Mode 3)

FIG. 7 shows the case in which two blocks x in the data latch circuit in FIG. 1(A) are connected in parallel. One of two reference potentials which are input to the two reference switches respectively is set at the highest potential (potential having an equal level to the H level of the DATA) while the other is set at the lowest potential (potential having an equal level to the L level of the DATA).

The data latch circuit in this embodiment mode includes a block y and a block y' connected in parallel, a correction inverter 7008 whose input terminal is connected to one of the connecting nodes of the block y and the block y', an inverter 7009 connected to the correction inverter 7008 in series, a switch 7007 for setting the threshold value connected between an input terminal and an output terminal of the correction inverter 7008, and a clocked inverter 7009.

The block y includes a first data sampling switch 7001 and a first capacitor means 7005 connected in series, and a first reference switch 7003 for inputting a signal DH to their connecting node (hereinafter referred to as a `node a`). The block y' includes a second data sampling switch 7002 and a second capacitor means 7006 connected in series, and a second reference switch 7004 for inputting a signal DL to their connecting node (hereinafter referred to as a `node a`).

In addition, ON/OFF of each of the first data sampling switch 7001 and the second data sampling switch 7002 is controlled by the LAT, thereby sampling the DATA. ON/OFF of each of the first reference switch 7003, the second reference switch 7004 and the switch 7007 for setting the threshold value is controlled by the LAT-1. The switch 7007 for setting the threshold value is provided between the input terminal and the output terminal of the correction inverter 7008. The connecting nodes between the input terminal of the correction inverter 7008 and the switch 7007 for setting the threshold value and between the output terminal of the correction inverter 7008 and the switch 7007 for setting the threshold value are referred to as a `node b` and a `node c` respectively. It is assumed in this embodiment mode that VSS is -2 V, VDD is 5 V, H level of each of LAT, LATB, LAT-1 and LAT-1B is 5 V while L level thereof is 0 V, and H level of DATA (DH) is 3 V while L level thereof (DL) is 0 V.

The timing chart in this embodiment is similar to the timing chart of Embodi