Title: Lanthanum aluminum oxynitride dielectric films
Abstract: Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. The lanthanum aluminum oxynitride film may be formed by atomic layer deposition.
Patent Number: 7,410,910 Issued on 08/12/2008 to Ahn, et al.
| Inventors: |
Ahn; Kie Y. (Chappaqua, NY), Forbes; Leonard (Corvallis, OR) |
| Assignee: |
Micron Technology, Inc.
(Boise,
ID)
|
| Appl. No.:
|
11/216,474 |
| Filed:
|
August 31, 2005 |
| Current U.S. Class: |
438/761 ; 257/E21.191; 438/770 |
| Current International Class: |
H01L 21/31 (20060101) |
| Field of Search: |
438/437,758,761,769,770 257/E21.191,E21.643
|
References Cited [Referenced By]
U.S. Patent Documents