Reduction of oxides in a fluid-based switch Number:7,071,432 from the United States Patent and Trademark Office (PTO) owispatent

Title: Reduction of oxides in a fluid-based switch

Abstract: In one embodiment, a switch includes first and second mated substrates defining therebetween a number of cavities. A plurality of wettable elements are exposed within one or more of the cavities. A switching fluid is held within one or more of the cavities. The switching fluid serves to connect and disconnect at least a pair of the plurality of wettable elements in response to forces that are applied to the switching fluid. A gas is also held within one or more of the cavities. The gas is provided to react with oxides on or in the cavities. An actuating fluid is held within one or more of the cavities and applies the forces to the switching fluid. Methods of making such a switch are also disclosed.

Patent Number: 7,071,432 Issued on 07/04/2006 to Lindsey

---

Inventors:	Lindsey; John Ralph (Colorado Springs, CO)
Assignee:	Agilent Technologies, Inc. (Palo Alto, CA)
Appl. No.:	190041
Filed:	July 26, 2005

---

Related U.S. Patent Documents

---

	Application Number	Filing Date	Patent Number	Issue Date
	10413794	Jan., 2003	6924443

---

Current U.S. Class:	200/182
Current International Class:	H01H 29/00 (20060101)
Field of Search:	200/182,187-189,193,194,214-216,233-236 310/328,331,348,363 335/4,47,78 385/19

---

References Cited [Referenced By]

---

U.S. Patent Documents

	2312672		March 1943		Pollard, Jr.
	2564081		August 1951		Schilling
	3430020		February 1969		Tomkewitsch et al.
	3529268		September 1970		Rauterberg
	3600537		August 1971		Twyford
	3639165		February 1972		Rairden
	3657647		April 1972		Beusman et al.
	4103135		July 1978		Gomez et al.
	4200779		April 1980		Zakurdaev et al.
	4238748		December 1980		Goullin et al.
	4245886		January 1981		Kolodzey et al.
	4336570		June 1982		Brower et al.
	4419650		December 1983		John
	4434337		February 1984		Becker
	4475033		October 1984		Willemsen et al.
	4505539		March 1985		Auracher et al.
	4582391		April 1986		Legrand
	4628161		December 1986		Thackrey
	4652710		March 1987		Karnowsky et al.
	4657339		April 1987		Fick
	4742263		May 1988		Harnden, Jr. et al.
	4786130		November 1988		Georgiou et al.
	4797519		January 1989		Elenbaas
	4804932		February 1989		Akanuma et al.
	4988157		January 1991		Jackel et al.
	5278012		January 1994		Yamanaka et al.
	5415026		May 1995		Ford
	5502781		March 1996		Li et al.
	5644676		July 1997		Blomberg et al.
	5675310		October 1997		Wojnarowski et al.
	5677823		October 1997		Smith
	5751074		May 1998		Prior et al.
	5751552		May 1998		Scanlan et al.
	5828799		October 1998		Donald
	5841686		November 1998		Chu et al.
	5849623		December 1998		Wojnarowski et al.
	5874770		February 1999		Saia et al.
	5875531		March 1999		Nellissen et al.
	5886407		March 1999		Polese et al.
	5889325		March 1999		Uchida et al.
	5912606		June 1999		Nathanson et al.
	5915050		June 1999		Russell et al.
	5972737		October 1999		Polese et al.
	5994750		November 1999		Yagi
	6021048		February 2000		Smith
	6180873		January 2001		Bitko
	6201682		March 2001		Mooij et al.
	6207234		March 2001		Jiang
	6212308		April 2001		Donald
	6225133		May 2001		Yamamichi et al.
	6278541		August 2001		Baker
	6304450		October 2001		Dibene, II et al.
	6320994		November 2001		Donald et al.
	6323447		November 2001		Kondoh et al.
	6351579		February 2002		Early et al.
	6356679		March 2002		Kapany
	6373356		April 2002		Gutierrez
	6396012		May 2002		Bloomfield
	6396371		May 2002		Streeter et al.
	6408112		June 2002		Bartels
	6446317		September 2002		Figueroa et al.
	6453086		September 2002		Tarazona
	6470106		October 2002		McClelland et al.
	6487333		November 2002		Fouquet et al.
	6501354		December 2002		Gutierrez et al.
	6512322		January 2003		Wong
	6515404		February 2003		Wong
	6516504		February 2003		Schaper
	6559420		May 2003		Zarev
	6633213		October 2003		Dove
	6781074		August 2004		Fong et al.
	6787720		September 2004		Wong
	6806431		October 2004		Kondoh et al.
	6822176		November 2004		Fazzio
	6831532		December 2004		Fong et al.
	6841748		January 2005		Wong et al.
	6855898		February 2005		Wong et al.
	2002/0037128		March 2002		Burger et al.
	2002/0146197		October 2002		Yong
	2002/0150323		October 2002		Nishida et al.
	2002/0168133		November 2002		Saito
	2003/0035611		February 2003		Shi
	2004/0144632		July 2004		Wong et al.
	2005/0034962		February 2005		Wong et al.

Foreign Patent Documents

	0593836		Oct., 1992		EP
	2458138		Dec., 1980		FR
	2667396		Apr., 1992		FR
	SHO 36-18575		Oct., 1961		JP
	SHO 47-21645		Oct., 1972		JP
	62-276838		Dec., 1987		JP
	8-125487		May., 1996		JP
	9161640		Apr., 1997		JP
	63-294317		Dec., 1998		JP
	WO 99/46624		Sep., 1999		WO

Other References

Bhedwar, Homi C., et al., "Ceramic Multilayer Package Fabrication", Electronic Materials Handbook, Nov. 1989, pp. 460-469, vol. 1 Packaging, Section 4: Packages. cited by other . Jonathan Simon, et al., "A Liquid Filled Microrelay with a Moving Mercury Microdrop", Journal of Microelectromechanical Systems, Sep. 1997, pp. 208-216, vol. 6, No. 3. cited by other . TDB-ACC-NO.: NB8406827, "Integral Power Resistors For Aluminum Substrate", IBM Technical Disclosure Bulletin, Jun. 1984, US, vol. 27, Issue No. 18, p. 827. cited by other . Kim, Joonwon, et al., "A Micromechanical Switch with Electrostatically Driven Liquid-Metal Droplet", Sensors and Actuators, A; Physical v 9798, Apr. 1, 2002, 4 pages. cited by other.

Primary Examiner: Friedhofer; Michael A.

---

Parent Case Text

---

CROSS REFERENCE TO RELATED APPLICATION

This is a continuation-in-part of U.S. patent application Ser. No. 10/413,794 filed on Apr. 14, 2003 now U.S. Pat. No. 6,924,443, which is hereby incorporated by reference for all that it discloses.

---

Claims

---

What is claimed is:

1. A method, comprising: in an environment having a low partial pressure of oxygen, wherein the low partial pressure of oxygen is at or below a critical limit to reduce formation of oxides: i) depositing a switching fluid on a first substrate; and ii) mating the first substrate to a second substrate, the first substrate and the second substrate defining therebetween a cavity holding the switching fluid, the cavity being sized to allow movement of the switching fluid between first and second states.

2. The method of claim 1, wherein the environment further comprises a gas, other than oxygen, that reacts with oxygen, or oxides that are, or will be, on or in the cavity holding the switching fluid; the oxides including at least one of: i) oxides on or in the switching fluid; ii) oxides of contamination on or in the switching fluid; iii) oxides on inner surfaces of the cavity; iv) oxides of contamination on the inner surfaces of the cavity; and v) oxides on or in alloys of elements in the cavity.

3. The method of claim 1, wherein the environment further comprises a gas other than oxygen, the gas comprising at least one of: hydrogen gas and carbon monoxide gas.

4. A method, comprising: in an environment containing a gas, other than oxygen, to reduce formation of oxides: i) depositing a switching fluid on a first substrate; ii) mating the first substrate to a second substrate, the first substrate and the second substrate defining therebetween a cavity holding the switching fluid, the cavity being sized to allow movement of the switching fluid between first and second states.

5. The method of claim 4, wherein the gas reacts with oxygen, or with oxides that are, or will be, on or in the cavity holding the switching fluid; the oxides including at least one of: i) oxides on or in the switching fluid; ii) oxides of contamination on or in the switching fluid; iii) oxides on inner surfaces of the cavity; iv) oxides of contamination on inner surfaces of the cavity; and v) oxides on or in alloys of elements in the cavity.

6. The method of claim 4, wherein the gas comprises at least one of: hydrogen gas and carbon monoxide gas.

7. The method of claim 4, wherein the gas comprises hydrogen gas, mixed with at least one of: nitrogen gas and helium gas.

8. A method, comprising: depositing a switching fluid on a first substrate; mating the first substrate to a second substrate, the first substrate and the second substrate defining therebetween a cavity holding the switching fluid, the cavity being sized to allow movement of the switching fluid between first and second states; and creating a gas in the cavity holding the switching fluid, the gas to react with oxygen or oxides within the cavity.

9. The method of claim 8, further comprising: before mating the substrates, depositing a catalyst on one of the substrates; depositing a carbon layer on the catalyst; and after mating the substrates, exciting the catalyst to create the gas.

10. The method of claim 8, wherein the gas is created to react with oxygen in the switch, or oxides on or in the cavity holding the switching fluid; the oxides including at least one of: i) oxides on or in the switching fluid; ii) oxides of contamination on or in the switching fluid; iii) oxides on inner surfaces of the cavity; iv) oxides of contamination on the inner surfaces of the cavity; and v) oxides on or in alloys of elements in the cavity.

11. A method, comprising: depositing a switching fluid on a first substrate; mating the first substrate to a second substrate, the first substrate and the second substrate defining therebetween a cavity holding the switching fluid, the cavity being sized to allow movement of the switching fluid between first and second states; and injecting a gas into the cavity, the gas to react with oxygen or oxides within the cavity.

12. The method of claim 11, wherein the gas is injected into the cavity via a gas injection channel that extends from within to outside the cavity; the method further comprising sealing the gas injection channel to prevent passage of gases into or out of the cavity.

13. The method of claim 12, wherein injecting the gas into the cavity comprises injecting the gas via the gas injection channel.

14. The method of claim 11, wherein the gas is injected to react with oxygen in the switch, or oxides on or in the cavity holding the switching fluid; the oxides including at least one of: i) oxides on or in the switching fluid; ii) oxides of contamination on or in the switching fluid; iii) oxides on inner surfaces of the cavity; iv) oxides of contamination on the inner surfaces of the cavity; and v) oxides on or in alloys of elements in the cavity.

15. A method of reducing oxides in a switch, comprising: depositing a switching fluid on a first substrate; mating the first substrate to a second substrate, the first substrate and the second substrate defining therebetween a cavity holding the switching fluid, the cavity being sized to allow movement of the switching fluid between first and second states, and the cavity being connected to a gas supply channel extending from within to outside the cavity; and in an environment containing a controlled pressure of one or more gases, hermetically sealing the switch, including the gas supply channel, to trap a desired pressure of the one or more gases in the cavity.

16. The method of claim 15, wherein the environment contains a controlled pressure of oxygen.

17. The method of claim 15, wherein the environment contains a controlled pressure of at least one oxide-reducing gas.

18. A switch, comprising: first and second mated substrates defining therebetween a number of cavities; a plurality of wettable elements exposed within one or more of the cavities; a switching fluid, held within one or more of the cavities, that serves to connect and disconnect at least a pair of the plurality of wettable elements in response to forces that are applied to the switching fluid; a gas, held within one or more of the cavities, to react with oxygen or oxides on or in the cavities; and an actuating fluid, held within one or more of the cavities, that applies the forces to the switching fluid.

19. The switch of claim 18, wherein the plurality of wettable elements comprise a plurality of electrodes.

20. The switch of claim 18, wherein the plurality of wettable elements comprise a plurality of wettable pads.

21. The switch of claim 18, further comprising: a gas injection channel that extends from within to outside the cavity; and a seal blocking the gas injection channel to prevent passage of gases into or out of the cavity.

22. The switch of claim 18, wherein the gas comprises hydrogen gas, mixed with at least one of: nitrogen gas and helium gas.

23. The switch of claim 18, wherein the switching fluid comprises one of: mercury, a mercury alloy, gallium, a gallium alloy, sodium potassium, and sodium potassium alloy.

24. The switch of claim 18, wherein the gas reacts with at least one of: i) oxides on or in the switching fluid; ii) oxides of contamination on or in the switching fluid; iii) oxides on or in the wettable elements; iv) oxides of contamination on or in the wettable elements; v) oxides on walls of the cavity; vi) oxides of contamination on walls of the cavity; vii) oxides on or in alloys of elements in the cavity; or viii) oxygen.

---

Description

---

BACKGROUND

Liquid metal micro switches (LIMMS) have been made that use a liquid metal, such as mercury, as the switching fluid. The liquid metal may make and break electrical contacts. To change the state of the switch, a force is applied to the switching fluid, which causes it to change form and move. Often, oxides may form within the switch and inhibit proper functioning of the switch. For example, the oxides may increase or decrease the surface tension of the liquid metal, which may increase or decrease the energy required for the switch to change state.

SUMMARY OF THE INVENTION

In a first embodiment, a method of forming a switch is disclosed. The method is performed in an environment having a low partial pressure of oxygen, wherein the low partial pressure of oxygen is at or below a critical limit to reduce formation of oxides. The method comprises depositing a switching fluid on a first substrate, and then mating the first substrate to a second substrate to define therebetween a cavity holding the switching fluid. The cavity is sized to allow movement of the switching fluid between first and second states.

In a second embodiment, a method of forming a switch is performed in an environment containing a gas, other than oxygen, that reduces formation of oxides. The method comprises depositing a switching fluid on a first substrate, and then mating the first substrate to a second substrate to define therebetween a cavity holding the switching fluid. The cavity is sized to allow movement of the switching fluid between first and second states.

In a third embodiment, a method of forming a switch comprises depositing a switching fluid on a first substrate. The first substrate is then mated to a second substrate to define a cavity therebetween. The cavity holds the switching fluid and is sized to allow movement of the switching fluid between first and second states. After the substrates are mated, a gas to react with oxides within the cavity is created in the cavity.

In a fourth embodiment, a method of forming a switch comprises depositing a switching fluid on a first substrate. The first substrate is mated to a second substrate to define a cavity therebetween. The cavity holds the switching fluid and is sized to allow movement of the switching fluid between first and second states. After the substrates are mated, a gas to react with oxides within the cavity is injected into the cavity.

In a fifth embodiment, a method of forming a switch comprises depositing a switching fluid on a first substrate. The first substrate is mated to a second substrate to define a cavity therebetween. The cavity holds the switching fluid and is sized to allow movement of the switching fluid between first and second states. The cavity is also connected to a gas supply channel extending from within to outside the cavity. In an environment containing a controlled pressure of one or more gases, the switch, including the gas supply channel, is hermetically sealed to trap a desired pressure of the one or more gases in the cavity.

In a sixth embodiment, a switch comprises first and second mated substrates, a plurality of wettable elements, a switching fluid, a gas, and an actuating fluid. The first and second mated substrates define therebetween a number of cavities. The plurality of wettable elements is exposed within one or more of the cavities. The switching fluid is held within one or more of the cavities and serves to connect and disconnect at least a pair of the plurality of wettable elements in response to forces that are applied to the switching fluid. The gas is held within one or more of the cavities to react with oxides on or in the cavities. The actuating fluid is held within one or more of the cavities and applies the forces to the switching fluid.

Other embodiments are also disclosed.

BRIEF DESCRIPTION OF THE DRAWINGS

Illustrative embodiments of the invention are illustrated in the drawings, in which:

FIG. 1 illustrates a perspective view of a first exemplary embodiment of a fluid-based switch;

FIG. 2 illustrates a plan view of the cavities of the FIG. 1 switch;

FIG. 3 illustrates a cross-section of the switch shown in FIG. 1;

FIG. 4 illustrates a second exemplary embodiment of a fluid-based switch;

FIG. 5 illustrates a first exemplary method of reducing oxides in a fluid-based switch;

FIG. 6 illustrates a second exemplary method of reducing oxides in a fluid-based switch;

FIG. 7 illustrates a third exemplary method of reducing oxides in a fluid-based switch;

FIG. 8 illustrates the use of a catalyst to create a gas in a fluid-based switch;

FIG. 9 illustrates a fourth exemplary method of reducing oxides in a fluid-based switch;

FIG. 10 illustrates the use of a gas injection channel to inject a gas into a fluid-based switch;

FIG. 11 illustrates a fifth exemplary method of reducing oxides in a fluid-based switch; and

FIG. 12 illustrates the use and hermetic sealing of a gas supply channel of a fluid-based switch.

DETAILED DESCRIPTION

A fluid-based switch is one in which a switching fluid is moved between different states to perform the switching function of the switch. For example, in an electrical switch, a switching fluid may be moved between different states to electrically couple and decouple pairs of electrodes; and in an optical switch, an opaque switching fluid may be moved between different states to couple and decouple pairs of wettable pads, thereby blocking and unblocking one or more light paths.

One impediment to the manufacture and operation of a fluid-based switch is oxides. Oxides can lead to poor switch performance, and even switch failure, because they lessen or prevent a switching fluid from wetting surfaces it is supposed to wet (e.g., electrodes or wettable pads), and they increase the likelihood that a switching fluid will wet surfaces that it should not (e.g., the walls of a switching fluid cavity).

Disclosed herein are various ways to reduce or eliminate the formation of oxides in a fluid-based switch. However, before describing these methods, some exemplary fluid-based switches will be described in greater detail.

FIG. 1 illustrates a first exemplary embodiment of a switch 100. The switch 100 comprises first and second mated substrates 102, 104 that define between them a number of cavities 106, 108, 110, 112, 114 Although five cavities 106 114 are shown, it is envisioned that more or fewer cavities may be formed within the switch 100. By way of example, the cavities are shown to comprise a switching fluid cavity 108, a pair of actuating fluid cavities 106, 110, and a pair of cavities 112, 114 that connect corresponding ones of the actuating fluid cavities 106, 110 to the switching fluid cavity 108. A plan view of these cavities 106 114 is shown in FIG. 2.

Exposed within one or more of the cavities is a plurality of electrodes 116, 118, 120 (i.e., a plurality of wettable elements). Although the switch 100 comprises three electrodes 116 120, alternate switch embodiments may have different numbers of (two or more) electrodes.

A switching fluid 122 held within one or more of the cavities serves to open and close at least a pair of the electrodes 116 120 in response to forces that are applied to the switching fluid 122. By way of example, the switching fluid 122 may comprise a conductive liquid metal, such as mercury, gallium, sodium potassium or an alloy thereof. An actuating fluid 124 (e.g., an inert gas or liquid) held within one or more of the cavities may be used to apply the forces to the switching fluid 122.

A cross-section of the switch 100, illustrating the switching fluid 122 in relation to the electrodes 116 120, is shown in FIG. 3.

The forces applied to the switching fluid 122 may result from pressure changes in the actuating fluid 124. That is, the pressure changes in the actuating fluid 124 may impart pressure changes to the switching fluid 122, thereby causing the switching fluid 122 to change form, move, part, etc. In FIG. 1, the pressure of the actuating fluid 124 held in cavity 106 applies a force to part the switching fluid 122 as illustrated. In this state, the rightmost pair of the switch's electrodes 118, 120 are coupled to one another. If the pressure of the actuating fluid 124 held in cavity 106 is relieved, and the pressure of the actuating fluid 124 held in cavity 110 is increased, the switching fluid 122 can be forced to part and merge so that electrodes 118 and 120 are decoupled and electrodes 116 and 118 are coupled.

By way of example, pressure changes in the actuating fluid 124 may be achieved by means of heating the actuating fluid 124, or by means of piezoelectric pumping. The former is described in U.S. Pat. No. 6,323,447 of Kondoh et al. entitled "Electrical Contact Breaker Switch, Integrated Electrical Contact Breaker Switch, and Electrical Contact Switching Method", which is hereby incorporated by reference for all that it discloses. The latter is described in U.S. Pat. No. 6,750,594 of Wong entitled "A Piezoelectrically Actuated Liquid Metal Switch", which is also incorporated by reference for all that it discloses. Although the above referenced patents disclose the movement of a switching fluid by means of dual push/pull actuating fluid cavities, a single push/pull actuating fluid cavity might suffice if significant enough push/pull pressure changes could be imparted to a switching fluid from such a cavity.

Additional details concerning the construction and operation of a switch such as that which is illustrated in FIG. 1 may be found in the aforementioned patents of Kondoh et al. and Wong.

FIG. 4 illustrates a second exemplary embodiment of a switch 400. The switch 400 comprises first and second mated substrates 402, 404 that define between them a number of cavities 406, 408, 410. Exposed within one or more of the cavities are a plurality of wettable pads 412, 414, 416 (i.e., a plurality of wettable elements). Although three cavities 406 410 are shown, it is envisioned that more or fewer cavities may be formed within the switch 400.

A switching fluid 418 held within one or more of the cavities wets to the pads 412 416 and serves to open and block light paths 422/424, 426/428 through one or more of the cavities, in response to forces that are applied to the switching fluid 418. By way of example, the switching fluid 418 may comprise a conductive liquid metal, such as mercury, gallium, sodium potassium or an alloy thereof. The light paths may be defined by waveguides 422 428 that are aligned with translucent windows in the cavity 408 holding the switching fluid 418. Blocking of the light paths 422/424, 426/428 may be achieved by virtue of the switching fluid 418 being opaque. An actuating fluid 420 (e.g., an inert gas or liquid) held within one or more of the cavities serves to apply the forces to the switching fluid 418.

Additional details concerning the construction and operation of a switch such as that which is illustrated in FIG. 4 may be found in the aforementioned patents of Kondoh et al. and Wong.

As previously indicated, one impediment to the manufacture and operation of fluid-based switches is the formation and presence of oxides. It has been discovered that these oxides can form in a variety of ways, and in a variety of places. For example, oxides can form on or in a switch's switching fluid 122, 418. Oxides can also form on contamination that is on or in the switching fluid 122, 418 (i.e., oxides of contamination can form on or in the switching fluid 122, 418). Oxides can also form on or in wettable elements, such as electrodes 116 120 or wettable pads 412 416. Or, oxides of contamination can form on or in the wettable elements 116 120, 412 416. Oxides can also form on the walls of a switch's cavities, and can include oxides of contamination on the walls of the switch's cavities. Further, oxides can form on or in alloys of elements that are housed within a switch's cavities (e.g., alloys formed between a switching fluid and its wettable elements, or alloys formed between a switching fluid and contamination).

Oxides can be introduced before or during switch manufacture, in the form of oxidized switch materials or contaminants. Or, oxides can form after switch manufacture (e.g., during use). Regardless, oxides can lead to poor switch performance, and even switch failure, because they lessen or prevent a switching fluid from wetting surfaces it is supposed to wet (e.g., electrodes or wettable pads), and they increase the likelihood that a switching fluid will wet surfaces that it should not (e.g., the walls of a switching fluid cavity).

One method 500 of reducing oxides is shown in FIG. 5. The method 500 comprises manufacturing a switch 100, 400 in an environment 502 having a low partial pressure of oxygen, wherein the low partial pressure of oxygen is at or below a critical limit to reduce formation of oxides. Within this environment, a switching fluid 122, 418 is deposited 504 on a first substrate 102, 402 of the switch; and the first substrate 102, 402 is mated 506 to a second substrate 104, 404 to define therebetween a cavity 108, 408 holding the switching fluid 122, 418. The cavity 108, 408 is sized to allow movement of the switching fluid 122, 418 between first and second states (e.g., as discussed with reference to switches 100 and 400, and as shown in FIG. 3).

By way of example, the environment with a low partial pressure of oxygen can be maintained in a vacuum chamber where the pressure of oxygen (and other gasses) is controlled and maintained.

The partial pressure of oxygen that is "low" enough to reduce formation of oxides (i.e., the pressure that is at or below a "critical limit") will vary depending on a switch's temperature and materials. By way of example, an oxygen partial pressure of less than 3.5 Torr will reduce mercury oxides in a switch that 1) uses a mercury switching fluid, and 2) will be manufactured and used at room temperature. Ellingham Diagrams may be used to determine what partial pressure of oxygen is below the "critical limit" for reducing formation of oxides for other combinations of temperature and materials.

Another method 600 of reducing oxides is shown in FIG. 6. The method 600 comprises manufacturing a switch 100, 400 in an environment 602 containing a gas 126, 430, other than oxygen, to reduce formation of oxides. Within this environment, a switching fluid 122, 418 is deposited 604 on a first substrate 102, 402 of the switch; and the first substrate 102, 402 is mated 606 to a second substrate 104, 404 to define therebetween a cavity 108, 408 holding the switching fluid 122, 418. Again, the cavity 108, 408 is sized to allow movement of the switching fluid 122, 418 between first and second states (e.g., as discussed with reference to switches 100 and 400, and as shown in FIG. 3).

By way of example, the gaseous environment can be maintained in a vacuum chamber or other controlled environment where the composition of gasses present can be controlled and maintained. In some embodiments, the gas 126, 430 "other than oxygen" may comprise one or both of hydrogen gas and carbon monoxide gas. If hydrogen gas is used, it may be mixed with at least one of nitrogen gas and helium gas (to increase its stability and safety). Other gases that react with oxygen to "bind" it and prevent it from forming oxides may also be used.

By manufacturing a switch 100, 400 in an environment containing an oxide-reducing gas 126, 430, the oxide-reducing gas 126, 430 may 1) react with oxygen and oxides during switch manufacture, and 2) be trapped within a switch's switching fluid cavity 108, 408 so as to react with oxygen and oxides during switch operation.

Yet another method 700 of reducing oxides is shown in FIG. 7. The method 700 comprises depositing 702 a switching fluid 122, 418 on a first substrate 102, 402 of the switch; and then mating 704 the first substrate 102, 402 to a second substrate 104, 404 to define therebetween a cavity 108, 408 holding the switching fluid 122, 418. Again, the cavity 108, 408 is sized to allow movement of the switching fluid 122, 418 between first and second states (e.g., as discussed with reference to switches 100 and 400, and as shown in FIG. 3). A gas 126, 430 that reacts with oxygen or oxides in the cavity 108, 408 is then created 706 in the cavity 108, 408.

The gas 126, 430 may be created by depositing a catalyst 800 on one of the switch's substrates 102, 104, before the substrates 102, 104 are mated. By way of example, the catalyst may be platinum or palladium. A carbon layer 802 may then be deposited on the catalyst. After the substrates 102, 104 are mated, the catalyst may be excited (e.g., by heating or irradiation) to initiate a reaction between the carbon and oxygen (or oxides), thereby leading to the production of carbon monoxide gas.

Although FIG. 8 illustrates the catalyst 800 deposited in the cavity 108 holding the switching fluid 122, the catalyst may alternately be deposited in other locations. For example, in one embodiment, the catalyst may be a heater (e.g., a thick or thin-film resistance heater) held within one of the actuating fluid cavities 106, 110, and the carbon layer may be deposited on the heater. The created gas may then, over time, be distributed to the switching fluid cavity 108 as a result of the pressure changes in the actuating fluid cavities 106, 110.

An additional method 900 of reducing oxides (FIG. 9) comprises depositing 902 a switching fluid 122, 418 on a first substrate 102, 402 of the switch; and then mating 904 the first substrate 102, 402 to a second substrate 104, 404 to define therebetween a cavity 108, 408 holding the switching fluid 122, 418. Again, the cavity 108, 408 is sized to allow movement of the switching fluid 122, 418 between first and second states (e.g., as discussed with reference to switches 100 and 400, and as shown in FIG. 3). A gas 126, 430 that reacts with oxygen or oxides in the cavity 108, 408 is then injected 906 into the cavity 108, 408.

As shown in FIG. 10, gas 126 may be injected into the cavity 108 by means of a gas injection channel 1000. The gas injection channel extends from within to outside the cavity 108, and may be formed as a result of mating a switch's substrates 102, 104 (as shown). Alternately, the gas injection channel may be fully formed within a single substrate (e.g., by means of a pre-drilled channel or "hole").

At some point, the gas injection channel 1000 needs to be sealed. In one embodiment, the channel 1000 is sealed prior to when gas is injected via the channel 1000, and a syringe is then used to momentarily puncture the seal. In another embodiment, the channel 1000 is sealed by injecting a sealant into the channel 1000 as a syringe is withdrawn from the channel 1000. In yet another embodiment, a sealant is melted, cured or fused as a syringe is withdrawn from the channel 1000. In any case, the seal 1002 prevents the passage of gases into or out of the cavity 108.

Gas 126 may also be removed from the cavity 108 via the channel 1000. By removing or injecting different kinds or amounts of gas, the pressures or gas types within the cavity 108 may be adjusted so as to reduce the formation of oxides within the cavity 108.

A final method 1100 of reducing oxides (FIG. 11) in a fluid-based switch comprises depositing 1102 a switching fluid 122, 418 on a first substrate 102, 402 of the switch; and then mating 1104 the first substrate 102, 402 to a second substrate 104, 404 to define therebetween a cavity 108, 408 holding the switching fluid 122, 418. Again, the cavity 108, 408 is sized to allow movement of the switching fluid 122, 418 between first and second states (e.g., as discussed with reference to switches 100 and 400, and as shown in FIG. 3).

Connected to the cavity 108 is a gas supply channel 1200 (FIG. 12). The gas supply channel 1200 extends from within to outside the cavity 108, and may be formed as a result of mating the switch's substrates 102, 104 (as shown). Alternately, the gas supply channel may be fully formed within a single substrate (e.g., by means of a pre-drilled channel or "hole"). In an environment containing a controlled pressure of one or more gases 126, the switch 100, including the gas supply channel 1200, is hermetically sealed 1106 (via, for example, hermetic seal 1202) to trap a desired pressure of the one or more gases 126 in the cavity 108. Alternately, just the gas supply channel 1200 is sealed.

In one embodiment, the environment under which the sealing 1106 occurs may be controlled by controlling the pressure of oxygen in the environment. In another embodiment, the environment may be controlled by controlling the pressure(s) of one or more oxide-reducing gases.

In some cases, various ones of the methods 500, 600, 700, 900, 1100 disclosed herein may be combined. Also, it may sometimes be necessary (or useful) to promote the reaction of a gas 126, 430 with oxygen or oxides by heating the gas, or by otherwise activating a catalyst.

When an oxide forms on a surface (e.g., an electrode) to which a switch's switching fluid 122, 418 wets, it is unlikely that an oxide-reducing gas 126, 430 will come into contact with the oxide. However, if the oxide progresses to the point that the switching fluid 122, 418 begins to de-wet the surface, the oxide-reducing gas 126, 430 will then contact and react with the oxide, thereby enabling a switch 100, 400 to self-heal itself.

*