Title: Semiconductor device adapted to remove noise from a signal
Abstract: What is invented is a semiconductor device (10) comprising a pellet (12) having a ground electrode (18), an outside signal terminal (15) connected to the pellet (12), so as to receive signal which is likely to include noise. Therein, said outside signal terminal (15) is surrounded with a ground terminal (17) connected to said ground electrode (18) in at least a half periphery.
Patent Number: 6,977,428 Issued on 12/20/2005 to Nakamura
| Inventors:
|
Nakamura; Akio (Tokyo, JP)
|
| Assignee:
|
Oki Electric Industry Co., Ltd. (Tokyo, JP)
|
| Appl. No.:
|
712090 |
| Filed:
|
November 14, 2003 |
Foreign Application Priority Data
| Jan 07, 2003[JP] | 2003-000859 |
| Current U.S. Class: |
257/678; 257/737; 257/738; 257/778; 257/787; 438/108; 438/118; 438/126; 438/137; 438/613 |
| Intern'l Class: |
H01L 023/02 |
| Field of Search: |
257/737,738,778,787
438/108,118,126,137,613
|
References Cited [Referenced By]
U.S. Patent Documents
| 5849606 | Dec., 1998 | Kikuchi et al.
| |
| Foreign Patent Documents |
| 7-45746 | Feb., 1995 | JP.
| |
| 9-148489 | Jun., 1997 | JP.
| |
| 2001/-118948 | Apr., 2001 | JP.
| |
| 2001/-292026 | Oct., 2001 | JP.
| |
| 2002/-043468 | Feb., 2002 | JP.
| |
| 2002/-198466 | Jul., 2002 | JP.
| |
| 2001/-210743 | Aug., 2002 | JP.
| |
| 2002/-314028 | Oct., 2002 | JP.
| |
Primary Examiner: Nelms; David
Assistant Examiner: Tran; Mai-Huong
Attorney, Agent or Firm: Rabin & Berdo, PC
Claims
1. A semiconductor device, comprising:
a pellet having a ground electrode; and
an outside signal terminal connected to the pellet, so as to receive a signal
which is likely to include noise; wherein
at least a half of a periphery of said outside signal terminal is surrounded
with a ground terminal that is connected to said ground electrode.
2. A semiconductor device according to claim 1, wherein said outside signal terminal
receives the signal by an antenna mounted on the apparatus where the semiconductor
device is installed.
3. A semiconductor device according to claim 1, wherein said outside signal terminal
receives an operating clock from the apparatus where the semiconductor device is installed.
4. A semiconductor device according to claim 1, wherein said outside signal terminal
receives an electricity source from the apparatus where the semiconductor device
is installed.
5. A semiconductor device according to claim 1, wherein said ground terminal
surrounds only half of the periphery of said outside signal terminal.
6. A semiconductor device according to claim 1, wherein said semiconductor device
is provided with a fixing reinforcement terminal to reinforce the fixing of the
semiconductor device to the apparatus installing it.
7. A semiconductor device according to claim 1, wherein said semiconductor device
is provided with plural terminals for electrical connection, each terminal projecting
at a base of the semiconductor device to connect with a socket.
8. A semiconductor device according to claim 1, wherein said semiconductor device
is provided with a pair of semiconductor pellets; wherein at the base of one of
the semiconductor pellets, the other semiconductor pellet is located; and wherein
electrodes of the other semiconductor pellet are connected with the plural terminals electrically.
9. A semiconductor device according to claim 8, wherein the pair of semiconductor
pellets are fixed with each other at confronting faces with conductive paste that
is electrically connected with said ground terminal.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a semiconductor device called area array package
comprising connecting sections arrayed in an area like a lattice, such as BGA (Ball
Grid Array) or CSP (Chip size package) and its manufacturing method, especially
to a semiconductor device to cope with electric signal including noise.
2. Description of Related Art
Today, there is an occasion when computer communication is performed by wireless,
such as radio waves or infrared rays. And, demand of this kind of wireless computer
communication is comparatively high. To reply to this demand, semiconductor device
for wireless communication is manufactured. And, an example of this semiconductor
device and its manufacturing method are disclosed in, for example, JP2001-210743.
This document discloses a method of manufacturing plural semiconductor devices
of different package sizes efficiently. The semiconductor devices of this kind
are mounted on mother boards. Plural wiring of a prescribed pattern is formed on
a mother board. And, each terminal of the semiconductor device is connected with
corresponding portion of the wiring. By way of each terminal, outside signals such
as electricity source, operating clock and radio signal obtained via antenna etc.
are inputted to said semiconductor device. On the other hand, said semiconductor
device puts out various kinds of signals from each terminal to corresponding portion
of wiring.
Meanwhile, in the conventional semiconductor device, noise could be included
in the outside signal of electricity source, operating clock or radio signal etc.
This noise caused error or delay in operation, when outside signal including this
noise is inputted to the semiconductor device. Since, any countermeasure is not
provided to said semiconductor device.
Therefore, the present invention aimed at providing semiconductor device
provided with a countermeasure to the noise included in the outside signal, or
occasionally in the inside signal.
SUMMARY OF THE INVENTION
The present invention adopts next configuration to solve problems mentioned above.
What is characterized is a semiconductor device comprising a pellet having a
ground electrode, an outside signal terminal connected to the pellet, so as to
receive signal which is likely to include noise. Therein, said outside signal terminal
is surrounded with a ground terminal connected to said ground electrode in at least
a half periphery.
Said outside signal terminal can receive signal by antenna mounted on the apparatus
where the semiconductor device is installed.
Said outside signal terminal can receive operating clock from the apparatus
where the semiconductor device is installed.
Said outside signal terminal can receive electricity source from the apparatus
where the semiconductor device is installed.
Said ground terminal can surround only half of the periphery of said outside
signal terminal.
Said semiconductor device can be provided with fixing reinforcement terminal
to reinforce the fixing of the semiconductor device to the apparatus installing it.
Said semiconductor device is provided with plural terminals for electrical connection.
And, each terminal is projecting at the base of semiconductor device to connect
with a socket.
Said semiconductor device is provided with a pair of semiconductor pellets.
At the base of one of the semiconductor pellets, the other semiconductor pellet
is located. And, electrodes of the other semiconductor pellet can be connected
with the plural terminals electrically.
A pair of semiconductor pellets mentioned above are fixed with each other at
confronting
faces with conductive paste. And, this conductive paste can be electrically connected
with said ground terminal.
What is characterized is a manufacturing method of semiconductor device for
forming each semiconductor device by separating it from a wafer at mark of each
ground terminal having peculiar form. The semiconductor device comprises a pellet
having a ground electrode, an outside signal terminal connected to the pellet,
so as to receive signal which is likely to include noise, and plural terminals
for inputting and outputting signals. And, the semiconductor device is sealed in
a resin as one body. Therein, said outside signal terminal is surrounded with a
ground terminal connected to said ground electrode in at least a half periphery.
The ground terminal has a peculiar form. And, each ground terminal is exposed at
the base of resin portion, after sealing each pellet located at the top of corresponding
terminal in the resin portion.
Said pellet can be located at a prescribed position with recognizing mark of
the ground terminal.
Each ground terminal exposed at the base of the resin portion can be formed
from one side of both surface of conductive board material, before locating said pellet.
A buffer layer having same rate of expansion as the material of the apparatus
to
install the semiconductor device can be formed at one side of the conductive board
material, after forming said each terminal on said board material.
Each terminal can be separated electrically by polishing said board material
at the other face of board material until said buffer layer appears, after forming
said buffer material.
A solder layer can be formed at one face of the conductive board material, after
forming said each terminal on said board material.
Each terminal can be separated electrically by polishing said board material
at the other face of the board material until said solder layer appears, after
forming said solder layer.
Each connecting portion is formed with remaining solder with its surface tension
at each terminal projecting at the base of said resin portion when said solder
layer is melted to remove, after sealing the pellet in the resin.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a perspective plan view of semiconductor device of Embodiment 1 at
a prescribed depth.
FIG. 2 is a sectional view of semiconductor device of Embodiment 1.
FIG. 3 is a plan view at the base of semiconductor device of Embodiment 1.
FIG. 4 is a plan view showing each terminal such as ground terminal formed from
the board material, and buffer layer; in the manufacturing method of semiconductor
device of Embodiment 1.
FIG. 5 is a sectional view showing each terminal such as ground terminal formed
from the board material, and buffer layer; in the manufacturing method of semiconductor
device of Embodiment 1.
FIG. 6 is a plan view showing pellet located at a prescribed position; in the
manufacturing method of semiconductor device of Embodiment 1.
FIG. 7 is a sectional view showing pellet located at a prescribed position;
in the manufacturing method of semiconductor device of Embodiment 1.
FIG. 8 is a sectional view showing pellet treated wire bonding; in the manufacturing
method of semiconductor device of Embodiment 1.
FIG. 9 is a sectional view showing sealed state of resin; in the manufacturing
method of semiconductor device of Embodiment 1.
FIG. 10 is a sectional view showing the polishing process; in the manufacturing
method of semiconductor device of Embodiment 1.
FIG. 11 is a sectional view showing sealed resin body; in the manufacturing
method of semiconductor device of Embodiment 1.
FIG. 12 is a sectional view showing formation of separating each semiconductor
device from the sealed resin body; in the manufacturing method of semiconductor
device of Embodiment 1.
FIG. 13 is a plan view showing sealed resin body at its base; in the manufacturing
method of semiconductor device of Embodiment 1.
FIG. 14 is a perspective plan view of semiconductor device of Embodiment 2 at
a prescribed depth.
FIG. 15 is a sectional view of semiconductor device of Embodiment 2.
FIG. 16 is a plan view at the base of semiconductor device of Embodiment 2.
FIG. 17 is a perspective plan view of semiconductor device of Embodiment 3 at
a prescribed depth.
FIG. 18 is a sectional view of semiconductor device of Embodiment 3.
FIG. 19 is a perspective plan view of semiconductor device of Embodiment 4 at
a prescribed depth.
FIG. 20 is a first sectional view of semiconductor device of Embodiment 4.
FIG. 21 is a second sectional view of semiconductor device of Embodiment 4.
FIG. 22 is a plan view at the base of semiconductor device of Embodiment 4.
FIG. 23 is a plan view showing each terminal such as ground terminal formed
from the board material, and solder layer; in the manufacturing method of semiconductor
device of Embodiment 4.
FIG. 24 is a sectional view showing each terminal such as ground terminal formed
from the board material, and solder layer; in the manufacturing method of semiconductor
device of Embodiment 4.
FIG. 25 is a plan view showing pellet located at a prescribed position; in the
manufacturing method of semiconductor device of Embodiment 4.
FIG. 26 is a sectional view showing pellet located at a prescribed position;
in the manufacturing method of semiconductor device of Embodiment 4.
FIG. 27 is a sectional view showing pellet treated wire bonding; in the manufacturing
method of semiconductor device of Embodiment 4.
FIG. 28 is a sectional view showing sealed state of resin; in the manufacturing
method of semiconductor device of Embodiment 4.
FIG. 29 is a sectional view showing the polishing process; in the manufacturing
method of semiconductor device of Embodiment 4.
FIG. 30 is a sectional view showing heated solder layer; in the manufacturing
method of semiconductor device of Embodiment 4.
FIG. 31 is a sectional view showing formation of separating each semiconductor
device from the sealed resin body; in the manufacturing method of semiconductor
device of Embodiment 4.
FIG. 32 is a plan view showing sealed resin body at its base, in the manufacturing
method of semiconductor device of Embodiment 4.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Hereafter, embodiments preferred by the inventor of the present invention
will be described with reference to the accompanying drawings.
<Embodiment 1>
FIG. 1 is a plan view at the top of semiconductor device
10 of present
invention as looking through it at a prescribed depth.
The semiconductor device
10 of present invention is what is called an
area package having terminals arrayed like a lattice, for example, BGA or CSP.
The semiconductor device
10 is installed on the surface of a mother board
comprising epoxy resin material including glass fiber by the method called solder
screen. On the mother board, signal lines for sending and receiving signal for
wireless communication are printed. The signal lines are connected with an antenna
terminal
15 comprising an outside signal terminal provided to the semiconductor
device
10 mentioned later.
The semiconductor device
10 comprises an integrated circuit. It further
comprises a pellet
12 having plural electrodes
11 to input and output
signals of the integrated circuit. Further, it comprises plural post terminals
13 in forms of columns to install the semiconductor device
10 on
the mother board and to input and output various signals. Here, a top end of the
post terminals
13 and the electrodes
11 are electrically connected
with wires
14 for bonding.
Further, the semiconductor device
10 of the present invention comprises
an antenna terminal
15 acting as a kind of outside signal terminal, which
is connected to a signal line to send and receive a signal to the antenna. The
pellet
12 has an antenna electrode
16 connected with the antenna
terminal
15. Besides, the semiconductor device
10 comprises a ground
terminal
17 in the form of a square bracket, which surrounds the antenna
terminal
15. The pellet
12 has plural ground electrodes
18
connected with the ground terminal
17. These elements of the semiconductor
device
10 are sealed in a resin portion
19.
In the base of resin portion
19, as shown in FIG. 2, a buffer layer
20
formed with resin material including glass fiber same as said mother board, is
provided. Here, FIG. 2 shows a sectional view of the semiconductor device
10
at the position designated by the line A-A′.
The buffer layer
20 is formed in a prescribed thickness and width with
its base coinciding with bases of the terminals
13,
15 and
17.
At the base of buffer layer
20, bottom end surfaces of terminals
13,
15 and
17 appear. And, formed there are connecting portions
21,
comprising solders in the forms of balls etc. On the other hand, at the top end
of terminals
13,
15 and
17, gilded portions
22 are
formed. And, the bottom surface of pellet
12 and top ends of terminals
13
in the central portion of FIG. 2 are bound with binding material
23.
The buffer layer
20 is formed with resin material including glass fiber
same as the mother board, as mentioned above. Therefore, the buffer layer
20
expands or shrinks according as the board expands or shrinks. By this, the connecting
portion
21 formed at the bottom end surfaces of the terminals
13,
15 and
17, does not peel off from these bottom end surfaces. The
reason is that the occurrence of strain at weak portions of binding interface between
the bottom end surfaces of the terminals
13,
15 and
17 and
the connecting portion;
21 is prevented.
Next, the semiconductor device
10 of the present invention is described
referring to FIG. 3 showing the semiconductor device
10 at its bottom surface.
The connecting portions
21 mentioned above are arrayed with equal intervals
at the bottom surface of the buffer layer
20. That is, post terminals
13
provided with connecting portions
21 are arrayed with equal intervals.
The antenna terminal
15 is positioned at the center of the right end portion
of the semiconductor device
10 in the drawings. And, the periphery of antenna
terminal
15 is surrounded with the bracket shaped ground terminal
17.
At the bottom surfaces of antenna terminal
15 and ground terminal
17
of FIG. 3, connecting portions
21 are formed as well, though not clearly
shown in FIG. 3. These can be seen more clearly in FIG. 11 or
12.
When the semiconductor device
10 is installed on the mother board, the
ground terminal
17 of this semiconductor device
10 is connected to
the ground terminal of the mother board. Therefore, the charge on the antenna terminal
15 is attracted to the ground terminal
17, because the electric potential
of this is lower than that of the antenna terminal
15, which is surrounded
with the ground terminal
17. According to this, electromagnetic wave in
electromagnetic field is attracted to the ground terminal
17. This attracted
electromagnetic wave is generally a high frequency wave, that is, noise. This kind
of high frequency wave (noise) is known to hinder operation. To avoid this, noise
included in the outside signal is removed. Here, as mentioned above, this is performed
by attracting the noise to the ground terminal
17 surrounding at least half
of the periphery of the antenna terminal
15 from the antenna terminal
15,
that is, the outside signal terminal, which receives the outside signal including noise.
As for the means for removal of the noise mentioned above, it is considered as
an equivalent of noise removing circuit comprising coil and capacitor known before
this invention. Therefore, according to the characteristic of noise, that is, frequency
band, inductance of equivalent coil and the capacitance of equivalent capacitor
are decided. And, for example, a sectional area of the antenna terminal, a sectional
area of the ground terminal, a distance between the antenna terminal and ground
terminal, and a kind of material of the resin portion
19 are adequately selected.
As mentioned above, according to the semiconductor device
10 of the present
invention, noise included in the signal line connected with the antenna can be
removed, because the antenna terminal
15 is surrounded with the ground terminal
17 at its periphery.
Next, the manufacturing method of the semiconductor device
10 of present
invention is described referring to the drawings.
As shown in the plan view of FIG. 4 and sectional view of FIG. 5, at the beginning,
on one surface of plate material
24 with conductivity comprising chief element
of copper, post terminals
13 are formed like a lattice. When the post terminals
13 are formed, a bracket shaped ground terminal
17 and an antenna
terminal
15 surrounded with the bracket shaped ground terminal
17
are simultaneously formed on the one surface of the plate material
24.
The plate material
24 has a uniform thickness of 50 μm to 400 μm
for example. And, this receives a mask treatment to form terminals
13,
15
and
17. After this treatment, it receives an etching treatment. By this
treatment; post terminals
13, an antenna terminal
15, and a ground
terminal
17; are formed simultaneously on the plate material
24.
The height and width of terminals
13,
15 and
17 are set about
one third of the thickness and width of said plate material
24.
In Embodiment 1, as mentioned above, a bracket shaped ground terminal
17
surrounded an antenna terminal
15 in half of its periphery. However, the
antenna terminal
15 should preferably be surrounded in all periphery of
it. Moreover, the ground terminal
17 should preferably be round shaped without
any corner. That is, non-cornered ground terminal such as half circle or full circle
etc. is preferable to surround the antenna terminal
15. By this kind of
ground terminal, noise in the antenna terminal
15 is more sufficiently reduced.
After forming terminals
13,
15 and
17, buffer layer
20
is formed with epoxy resin material including glass fiber same as mother board.
And, in this state, top ends of terminals
13,
15 and
17 are
projected from resin. After forming buffer layer
20, buffer layer
20
and terminals
13,
15 and
17 projected from it; are cleaned
with cleaning water including cleansing material. By this cleaning, needless matter
attached when the buffer layer
20 is formed can be removed.
After removing the needless matter, as shown in the plan view of FIG. 6 and
the sectional view of FIG. 7, gilded portion
22 is formed on the top ends
of terminals. By forming gilded portion
22, wire
14 is easily connected
with terminals
13,
15 and
17 in the wire bonding process mentioned
later. And, it can reduce the loss of electricity between terminals
13,
15 and
17; and the wire.
After this process, a pellet
12 manufactured by the method known before
the present invention is brought at a prescribed position on the arrayed post terminals
13. In this occasion, the bracket shaped ground terminal discriminated from
the other terminals is used as a guide to lead the pellet
12 to the prescribed
position. And, the pellet
12 is fixed by binding material
23.
Therefore, by using the ground terminal discriminated from the other terminals
as an indicator of positioning, the pellet is positioned in high accuracy.
As shown in the sectional view of FIG. 8, after fixing pellet, electrodes of
the
pellet and their corresponding terminals
13,
15 and
17 are
connected with wire.
In this occasion, though not shown in FIG. 8, ground electrode
18 of pellet
12 shown in FIG. 6 and ground terminal
17 are connected with wire.
And, antenna electrode
16 and antenna terminal
15 are connected with
wire (c.f FIG. 1).
After, performing wire bonding, as shown in the sectional view of FIG. 9,
the semiconductor device
10 is set in a metal mold for performing resin
material sealing. And, the surface of buffer layer
20, terminals
13,
15 and
17 projected from the buffer layer, pellet
12, and
wire
14 are sealed with resin portion
19. By this sealing, resin
body sealed plural pellet is formed.
After forming resin body, this resin body is taken out from a metal mold. Then,
the plate material
24 is removed. This is performed, as shown in FIG. 10,
by polishing the other face (bottom face) of the plate material with a grinder
26 until bottom ends of terminals
13,
15 and
17 appear.
By this polishing of removing plate material
24, end faces of terminals
13,
15 and
17 come out and these terminals
13,
15
and
17 are electrically separated with each other.
After removing the plate material by polishing, as shown in FIG. 11, at the
end faces of terminals
13,
15 and
17 formed are connecting
portions
21 such as solder balls or surface layers. When connecting portions
21 are formed, the oxide films at the end faces of terminals
13,
15 and
17 are already removed, because the end faces of terminals
13,
15 and
17 have already been polished with a grinder
26.
After forming connecting portions
21, as shown in the sectional view
of FIG. 12, the resin body is cut into a prescribed size of pieces with using a
circular saw
27 of high revolution speed. Then, each semiconductor device
10 is formed. In this occasion, as shown in the plan view of FIG. 13, at
the bottom surface of resin body, exposed are the end faces of post terminal
13,
antenna terminal
15 and ground terminal
17. As is apparent in FIG.
13, ground terminal
17 has a peculiar form discriminated from the other
terminals
15 and
13.
Therefore, when the resin body is divided into each semiconductor device
10, it can be cut in high accuracy by using the ground terminal
17
discriminated from the other terminals as a guide for positioning.
As described above, according to the manufacturing method of present invention,
in the occasion when pellet
12 is positioned at a prescribed position, the
ground terminal
17 discriminated from other terminals can be used as a guide
for positioning. Thus, pellet
12 is positioned in high accuracy.
Moreover, according to the manufacturing method of present invention, in
the occasion when resin body is divided into pieces, the ground terminal
17
discriminated from other terminals can be used as a guide for positioning. Thus,
resin body is divided into pieces in high accuracy, so as to form each semiconductor
device
10.
Further, according to the present invention, the conventional expensive
apparatus of fluoroscopy to look through pellet
12 in resin body
19
is not needful to use. And, positioning of cutter to divide resin body is possible.
So, equipment investment for manufacturing semiconductor device
10 of present
invention becomes small.
And, according to the semiconductor device manufactured by the method of present
invention, noise included in the signal line connected with the antenna terminal,
can be removed by the ground terminal, which surrounds the antenna terminal in
the form of square bracket.
<Embodiment 2>
Next, described is the other semiconductor device
100 formed by diverting
the manufacturing method of present invention mentioned before.
FIG. 14 is a plan view looking at the top surface of semiconductor device
100
and looking through it at a prescribed depth.
The semiconductor device
100 differs from the semiconductor device
10
mentioned before in fixed reinforcement terminals to reinforce the fixing to the
mother board.
The semiconductor device
100 of present invention comprises integrated
circuit. And, it comprises a pellet
12 having plural electrodes
11
to input and output signals of the integrated circuit. Further, it comprises plural
post terminals
13 to install the semiconductor device
10 on mother
board and to input and output various signals. Here, top end of the post terminals
13 and the electrodes
11 are electrically connected with wires
14
for bonding. Further, the semiconductor device
100 comprises an antenna
terminal
15 same as that of the semiconductor device
10 of Embodiment
1 mentioned before. And, said pellet
12 has an antenna electrode
16
connected with the antenna terminal
15. Besides, the semiconductor device
100 comprises a ground terminal
17 in the form of a square bracket,
which surrounds the antenna terminal
15. And, said pellet
12 has
plural ground electrodes
18 connected with the ground terminal
17.
These elements of the semiconductor device
100 are sealed in a resin portion
19.
Further, the semiconductor device
100 of present invention comprises
fixing reinforcement terminals
28 in forms of columns near every corner
of the semiconductor device
100, sealed same as the post terminals
13.
The sectional area of the fixing reinforcement terminals
28 is formed
larger than that of the post terminals
13. By this large sectional area,
the contacting area of the semiconductor device
100 with the mother board
becomes large.
In the base of resin portion
19, a buffer layer
20 including glass
fiber same as said mother board, is provided. Here, FIG. 15 shows a sectional view
of the semiconductor device
100 of FIG. 14 at the position designated by
the line B-B′ in order to show the location of the fixing reinforcement
terminals
28 of characteristic of present invention for the buffer layer
20 of the semiconductor device
100.
The pellet
12 is bound with the top end surfaces of terminals
13
beneath the bottom surface of the pellet
12 with binding material
23.
At the bottom end surfaces exposed from the bottom surface of the buffer layer
20, formed are contacting portions
21 such as surface layers or solder
balls etc. And, at the fixing reinforcement terminals
28, formed are similar
contacting portions
21′ as well. This contacting portions
21′
are formed corresponding to the sectional area of the fixing reinforcement terminals
28. And, their areas are larger than those of the other contacting terminals
21 contacting with the mother board. By these large contacting areas, the
semiconductor device
100 is strongly bound with the mother board.
Next, the semiconductor device
100 of present invention is described
referring to FIG. 16 showing the semiconductor device
100 at its bottom
surface. In FIG. 16, the connecting portions
21 are formed on the bottom
end surfaces of the terminals
13,
15 and
17 arrayed at the
bottom surface of the buffer layer
20. The connecting portions
21′
are formed on the bottom end surfaces of the fixing reinforcement terminals
28
arrayed near every corner of the semiconductor device
100.
The antenna terminal
15 is positioned at the center of the right end portion
of semiconductor device
100 in the drawings. And, the periphery of antenna
terminal
15 is surrounded with the bracket shaped ground terminal
17.
At the bottom surfaces of antenna terminal
15 and ground terminal
17,
connecting portions
21 are formed as well as the post terminals
13
(c.f. FIG. 15). And, these are connected to the ground terminals of said mother
board. Therefore, similarly to the semiconductor device
10 mentioned above,
noise included in the signal line connected to the antenna terminal
15 can
be removed.
Here, the manufacturing method of the semiconductor device
100 is described.
The fixing reinforcement terminals
28, which are characteristics of the
semiconductor terminal
100, are formed by changing the mask pattern of terminals
13,
15 and
17 of Embodiment 1. That is, the fixing reinforcement
terminals
28 together with the post terminals
13, antenna terminal
15 and ground terminal
17, shown in, for example FIG. 16, are formed
by etching treatment of the conductive plate material
24. And, what is used
for etching is the changed mask pattern; which is made from the mask pattern used
for forming the semiconductor device
10 of Embodiment 1 mentioned before.
The other treatments than changing of mask pattern are same as Embodiment 1. So,
the same description is omitted.
As described above, according to the semiconductor device
100 of present
invention, an effect of strongly binding the semiconductor device
100 to
the mother board is obtained as well as the effect of removing noise from the signal
line connected to the antenna terminal
15. Since, the fixing reinforcement
terminals
28 are formed on the semiconductor device
100.
And, the semiconductor device
100 can be manufactured without special
manufacturing apparatus, because the fixing reinforcement terminals
28 can
be formed by the changed mask pattern.
<Embodiment 3>
Next, described is the other semiconductor device
200. FIG. 17 is a
plan view looking at the top surface of semiconductor device
200 and looking
through it at a prescribed depth.
Here, in the semiconductor device
200 of FIG. 17, the sectional view
at the line A-A′ is shown in FIG. 18. And, the semiconductor device
200
is described, referring to FIG. 18 as well as FIG. 17.
The semiconductor device
200 has a pair of pellets
12 and
12′.
And, this is the difference from the semiconductor device
10 mentioned before.
The semiconductor device
200 of present invention comprises integrated
circuit. And, it comprises a pellet
12 having plural electrodes
11
to input and output signals of the integrated circuit. Further, it comprises plural
post terminals
13 to install the semiconductor device
200 on mother
board and to input and output various signals. Here, top end of the post terminals
13 and the electrodes
11 are electrically connected with wires
14
for bonding. Further, the semiconductor device
200 comprises an antenna
terminal
15 same as that of the semiconductor device
10 of Embodiment
1 mentioned before. And, said pellet
12 has an antenna electrode
16
connected with the antenna terminal
15. Besides, the semiconductor device
200 comprises a ground terminal
17 in the form of a square bracket,
which surrounds the antenna terminal
15. And, said pellet
12 has
plural ground electrodes
18 connected with the ground terminal
17.
These elements of the semiconductor device
200 are sealed in a resin portion
19.
Further, the semiconductor device
200 of present invention comprises
the other pellet
12′, which sticks to the bottom surface of pellet
12. And, conductive paste
30 consisting of silver, copper or gold
etc. is sandwiched between two pellets
12,
12′. And, it comprises
bump metals
29 to electrically connect the post terminals
13 with
electrodes
11 at the bottom surfaces of pellet
12′, by heat
pressure welding. Further, it comprises gilding
22 formed on the top end
surfaces of terminals
13,
15 and
17. And, in the base of resin
portion
19, a buffer layer
20 including glass fiber same as said
mother board, is provided. At the terminals
13,
15 and
17
exposed from the bottom surface of the buffer layer
20, formed are contacting
portions
21 such as surface layers or solder balls etc.
As mentioned above, the electrodes
11 of pellet
12 of one side
and
the corresponding terminals are connected with wires
14 similarly as semiconductor
device
10 of Embodiment 1 mentioned before. And, the electrodes
11
of pellet
12′ of the other side are connected electrically with the
post terminals
13 by heat pressure welding with bump metal
29. Therefore,
integrity becomes high, because a pair of pellets of two stories is packaged.
Further, the semiconductor device
200 of present invention comprises
an antenna terminal
15, as shown in FIG. 17. The antenna terminal
15
is positioned at the center of the right end portion of semiconductor device
100
in the drawings. And, the periphery of antenna terminal
15 is surrounded
with the bracket shaped ground terminal
17. And, this is connected to the
ground terminals of said mother board. Therefore, similarly to the semiconductor
device
10 mentioned above, noise included in the signal line connected to
the antenna terminal
15 can be removed.
The conductive paste
30 shown in FIG. 18 is electrically connected with
the ground terminal
17 shown in FIG. 17. Besides, this ground terminal
17
is connected to the ground of mother board not shown in the drawings. Therefore,
the conductive paste
30 interrupts each needless radiation (noise) of pellets
12,
12′. That is, the pellets
12,
12′
are separated from each other by the conductive paste
30, which excludes
noise coming from the other pellet. Thus, each operation of pellets
12,
12′ is kept in stable condition.
Here, the manufacturing method of the semiconductor device
200 is described.
In the manufacturing method of the semiconductor device
200, similarly
as the manufacturing method of the semiconductor device
10 mentioned above,
an etching treatment is performed to a conductive plate material
24, so
as to form the terminals
13,
15 and
17. And, a buffer layer
24 is formed. After this, gilding is performed on the top end surfaces of
the terminals
13,
15 and
17. Until this, both methods are common.
After this, the other pellet
12′ is stuck to a prescribed position
where the terminals
13 with gilt are arrayed. This is performed with bump
metal
29, which is stuck with heat and pressure.
Therefore, the bump metal
29 is preferably a conductive metal which
can melt at a temperature lower than the melting temperature of the plate material
24 with terminals
13,
15 and
17.
After the other pellet
12′ is stuck, the former pellet
12
is stuck to the other pellet
12′ with conductive paste
30
such as silver paste etc. In this occasion, both back faces of these pellets are
stuck, while both front faces of these pellets have electrodes. When this sticking
is performed, one end of a conductive wire is caught between the former pellet
12 and the other pellet
12′ with conductive paste
30.
And, the other end of wire is connected to the ground terminal
17. After
this, similarly the semiconductor device
10 mentioned before, the electrodes
11 of the former pellet and the terminals corresponding to the electrodes
11 are connected with wire. The other processes performed after this, are
same as the manufacturing method of semiconductor
10. So, the same description
is omitted.
As mentioned above, according to the semiconductor device
200 of present
invention, the following effect is obtained as well as the effect of removing noise
included in the signal line connected to the antenna terminal
15. That is,
a pair of pellets
12,
12′ are packaged in upper and lower
layers. Thus, the base area of semiconductor device does not increase. And, the
area occupied by semiconductor device
200 on mother board, becomes about
half of the conventional device.
Further, according to the semiconductor device
200 of present invention,
the operation of pellet is kept in stable condition. Since, conductive paste to
connect pellets
12,
12′ to ground terminal
17, shield
needless radiation come from inside of pellets.
<Embodiment 4>
Next, a semiconductor device to attach with a socket of testing apparatus not
shown in the drawings, is described. This testing apparatus is used for examining
quality of semiconductor device
300. And, it has terminals
13,
15
and
17 projecting form the base of resin portion
17, so as to attach
to the testing apparatus.
FIG. 19 is a plan view showing the inner structure of semiconductor device
300
at a prescribed depth from the top surface of it.
The semiconductor device
300 of present invention installs integrated
circuit. And, it comprises a pellet
12 having plural electrodes
11
for inputting and outputting of the integrated circuit; plural post terminal
13
to input and output various signals installed on a mother board not shown in the
drawings; wire
14 for bonding to electrically connect top end of the post
terminals
13 with electrodes of the pellet
12; an antenna terminal
15 same as the semiconductor device
10 mentioned before; an antenna
electrode
16 formed on the pellet
12 to connect with the antenna
terminal
15; a ground terminal
17 having a shape of square bracket
surrounding said antenna terminal
15; plural ground electrodes
18
formed on the pellet
12 to connect to the ground electrode
18; fixing
reinforcement terminals
28 in forms of column same as the terminals
13,
15 and
17, but the sectional area is larger than them; and resin
portion
19 to seal all these members in resin.
Here, in the semiconductor device
300 of FIG. 19, the sectional view
at A-A′ line is shown in FIG. 20. And, the semiconductor device
300
is described referring to FIG. 20.
The semiconductor device
300 of present invention comprises binding material
to bind pellet
12 at a prescribed position of top end of post terminals
13, and gilding
22 performed on the terminals
13,
15
and
17.
Cylindrical connecting portions
32 are formed on the peripheral
walls of bottom ends of terminals
13,
15 and
17 with gilding
22; and fixing reinforcement terminals
28. And, the testing apparatus
catches these cylindrical connecting portions
32 with a socket. Then, it
performs various examination of the semiconductor device
300 before putting
for sale.
Since examination before putting for sale is performed with various testing
apparatus, each testing device has socket able to attach and detach the terminals
13,
15,
17 and
28. By this kind of socket, unlike the
conventional apparatus, it is not necessary to stick connecting portion such as
surface layer or solder ball etc. formed on the base surface of each terminal,
with plural pins for examination. So, each connecting portion does not get any
pin holes formed by each testing apparatus.
If many pin holes are formed on the connecting portion, the surface area on connecting
portion needful for conducting decreases. And, electric resistance increases. So,
the semiconductor device is not examined adequately. Further, owing to plural pin
holes formed by each testing device, connection between testing pin and connecting
portion becomes loose. So, the testing apparatus cannot examine the semiconductor
device adequately. To solve problems mentioned above, the semiconductor device
300 of present invention has each terminal projected form the base surface
of resin portion
19, so as to attach and detach socket without forming any
pin holes.
Here, in the semiconductor device
300 of FIG. 19, its sectional view
at B-B′ line is shown in FIG. 21. Then the structure of semiconductor device
300 is shown in FIG. 21. However, the structure is already described. So,
the same description is omitted.
The bottom end portion of each terminal to attach and detach the socket of testing
device, is projected from the base surface of resin portion
19. Corresponding
to the projected bottom end portion, the installing surface of mother board is
formed, so as to install the semiconductor device
300. The semiconductor
device
300 of present invention is strongly bound on the mother board by
the fixing reinforcement terminals
28 with larger contacting area with the
installing surface.
FIG. 22 is a plan view showing the semiconductor device
300 of present
invention at its base surface.
The antenna terminals
15 of semiconductor device
300 is positioned
at the center of right end portion of semiconductor device
300 in FIG. 22.
And, the antenna terminal
15 is surrounded with bracket shaped ground terminal
17 in the periphery. Therefore, similarly as the semiconductor device
10
mentioned before, noise included in the signal line connected to the antenna terminal
15 can be removed. Since, the ground terminal
17 surrounding the
antenna terminal
15 is connected to ground of mother board not shown in
the drawings.
Next, the manufacturing method of the semiconductor device
300 mentioned
above is described referring to the drawings.
As shown in the plan view of FIG. 23 and the sectional view of FIG. 24 at A-A′
line of FIG. 23, column shaped post terminals
13 are formed like a lattice
on the one surface of conductive plate material
24 comprising chief element
of copper. At the same time when the post terminals
13 are formed; a bracket
shaped ground terminal
17 and an antenna terminal surrounded with the ground
terminal
17 in the periphery, are formed on the one surface of plate material
24.
The plate material
24 has a uniform thickness of 50 μm to 400 μm
for example. And, this plate material
24 gets a masking treatment to form
the terminals
13,
15 and
17. Then, etching treatment is performed.
By this treatment, post terminals
13, antenna terminals
15 and ground
terminals
17 are formed at a time. Each height of terminals
13,
15
and
17 is set about one third of the thickness of said plate material
24.
In Embodiments mentioned above, the antenna terminal
15 is surrounded
with
the bracket shaped ground terminal
17. However, it is more satisfactory
if the antenna terminal
15 is surrounded with ground terminal all around.
Moreover, it is more satisfactory if the ground terminal
17 surrounding
the antenna terminal
15 does not have any corner, like half circle, full
circle etc. By this kind of ground terminal, noise included in the electric signal
on the signal line connected with the antenna terminal
15 mentioned above,
decreases more sufficiently.
After forming terminals
13,
15,
17 and
28; solder
layer
31 is formed in the state of projecting each top end portion of the
terminals
13,
15,
17 and
28. The solder layer
31
is formed with metal consisting chief element of solder. That is, this metal material
is melted. And, the melted metal material is cooled to be solid on one face of
the plate material
24 having the terminals. The melting temperature of solder
is lower than the melting temperature of copper. That is, it is about 220°
C. to 240° C. So; the plate material
24 comprising chief element of
copper; and the terminals
13,
15,
17 and
28 formed
from the plate material
24; are not melted by the heat of forming solder
layer
31.
After forming solder layer
31, the surface of solder layer
31
and the terminals
13,
15,
17 and
28 are cleaned by
cleaning liquid containing cleansing material, so as to remove dirt.
After removing dirt, as shown in a plan view of FIG. 25 and a sectional view
of FIG. 26 at A-A′ line in FIG. 25, gilding
22 is performed on the
top end of each terminal. By this gilding
22, wire
14 is easily connected
with the terminals
13,
15 and
17 in the bonding treatment
of wire
14 mentioned later. And; loss of electricity between the terminal
13,
15 and
17; and wire; decreases.
After this, pellet
12 formed by the method known before this invention,
is bound with binding material
23 at a prescribed position on the arrayed
post terminal
13, with a guide of peculiar bracket shaped ground terminal
17 discriminated from the other terminals.
Therefore, the pellet
12 is bound at a prescribed position with
high accuracy, owing to the positioning guide of ground terminal discriminated
from the other terminals.
As shown in a sectional view of FIG. 27, after binding pellet
12, each
electrode of pellet
12, and the corresponding terminal
13,
15
and
17, are connected with wire
14.
In this occasion, though not shown in FIG. 27, the ground electrode
18
of each pellet
12 shown in FIG. 25 and the ground terminal
17 are
connected with wire
14. And, the antenna electrode
16 and the antenna
terminal
15 are connected with wire
14 as well (c.f. FIG. 19).
After performing wire bonding, as shown in a sectional view of FIG. 28, the
semiconductor device is put on a metal mold
25 for sealing it with resin
material. Then; the surface of solder layer
31; the terminals
13,
15,
17 and
28; pellet
12; and the wire
14; are
sealed with resin portion
19. By this sealing, a resin sealed body including
plural pellets
12, is formed.
After forming a resin sealed body, it is taken out from the metal mold
25.
And, as shown in FIG. 29, to remove the plate material
24, polishing is
performed with a polisher
26 from the other face (base) of plate material
to the bottom ends of the terminals
13,
15,
17 and
28.
Thus, the plate material
24 is removed. And, the terminal
13,
15,
17 and
28 are exposed at the base of solder layer
20. Then,
the terminals
13,
15,
17 and
28 are electrically separated
with each other.
After removing the plate material
24 by polishing, as shown in a sectional
view of FIG. 30, the solder layer
31 is heated up from the base of the solder
layer
31. By this heating, only the solder layer
31 is melted. Then,
the resin sealed body is raised up by an apparatus not shown in the drawings. By
this, the solder layer
31 is removed from each terminal and resin portion
19. In this occasion, the melted solder layer
31 remains at the side
walls of terminals
13,
15,
17 and
28 projected from
the base of resin portion
19 respectively. Thus, cylindrical connecting
portions
32 are formed.
After forming the cylindrical connecting portions
32, as shown in a
sectional view of FIG. 31, the resin sealed portion is cut in a prescribed size
with a circular saw
27 such as a high rotational speed saw etc. Then, each
semiconductor device
300 is formed. In this occasion, as shown in a plan
view of FIG. 32, the post terminals
13, an antenna terminal
15, a
ground terminal
17, and fixing reinforcement terminals
28, are exposed.
And, the bracket shaped ground terminal
17 becomes a guide for positioning.
So, the resin sealed body is divided with high accuracy, so as to form each semiconductor
device
300.
According to the manufacturing method of Embodiment 4, pellets
12
are put on a prescribed position with high accuracy, by using the ground terminal
17 discriminated from the other terminals as a guide for positioning pellets
12.
Further, according to the manufacturing method of present invention, the
resin sealed body is divided with high accuracy, by using the ground terminal
17
as a guide for positioning the circular saw
27, so as to form each semiconductor
device
300.
Further, according to the present invention, the equipment investment for
manufacturing semiconductor device
300 of present invention is restrained,
because it is possible to decide dividing position of the resin sealed body without
any costly conventional apparatus to see pellets
12 though the resin portion
19.
According to the semiconductor device
300 manufactured by the method
of present invention, as well as the effect of removing noise included in the signal
line connected with the antenna terminal
15, obtained is an effect of examining
the semiconductor device
300 sufficiently. Since, increase of electricity
resistance or bad contact can be avoided by each terminal projected from the base
of resin portion
19 of the semiconductor device
300, which is able
to attach and detach the socket of testing apparatus, without causing any pin holes.
Incidentally, in Embodiments mentioned above, noise included in the
signal line connected with antenna, is removed. However, noise included in the
signal line connected with a receiver of infrared rays, is removed as well by the
present invention.
Further, noise included in an electricity feeding line for operating the
semiconductor device, or noise included in the operating clock, is removed as well
by the present invention.
Moreover, noise in the semiconductor device is removed as well by the present
invention. Since, the output terminal of signal including noise is surrounded by
ground terminal, so as to prevent the noise from getting out of the semiconductor
device when a signal is put out.
*
