Semiconductor device having output transistor and current control circuit Number:7,436,225 from the United States Patent and Trademark Office (PTO) owispatent A semiconductor device includes: a semiconductor substrate having first and second pads; an output transistor; and a current control circuit having first and second resistors, a control signal generation circuit, first and second switching circuits. The first or second resistor is disposed between the first or second pad and the output transistor. The control signal generation circuit generates a control signal to the output transistor based on a voltage of both ends of the first or second resistor. The first or second switching circuit is disposed between both ends of the first or second resistor and the control signal generation circuit. The first or second switching circuit is controlled to be in an on-state.<H Semiconductor, transistor, Semiconductor, d, 7436225.html, Patent, pto, 7436225

Title: Semiconductor device having output transistor and current control circuit

Abstract: A semiconductor device includes: a semiconductor substrate having first and second pads; an output transistor; and a current control circuit having first and second resistors, a control signal generation circuit, first and second switching circuits. The first or second resistor is disposed between the first or second pad and the output transistor. The control signal generation circuit generates a control signal to the output transistor based on a voltage of both ends of the first or second resistor. The first or second switching circuit is disposed between both ends of the first or second resistor and the control signal generation circuit. The first or second switching circuit is controlled to be in an on-state.

Patent Number: 7,436,225 Issued on 10/14/2008 to Arashima, et al.

Inventors: Arashima; Yoshinori (Gamagori, JP), Okuda; Shouichi (Nukata-gun, JP)
Assignee: Denso Corporation (Kariya, JP)

Appl. No.: 11/702,504

Filed: February 6, 2007

Foreign Application Priority Data


Apr 17, 2006 [JP]			2006-113358
Nov 09, 2006 [JP]			2006-304147

Current U.S. Class: 327/108 ; 327/109; 327/309; 327/312; 327/427; 361/56; 361/93.7

Current International Class: H03B 1/00 (20060101)

Field of Search: 327/108-111,309-316,379-381,424,427 361/54,56,91.2,93.7,93.9

References Cited [Referenced By]

U.S. Patent Documents


5528128	June 1996	Melse
6198315	March 2001	Nakano
6573693	June 2003	Okamoto

Foreign Patent Documents


0 827 266	Jun., 2001	EP
A-2000-131369	May., 2000	JP
A-2005-86872	Mar., 2005	JP
A-2005-252968	Sep., 2005	JP

Primary Examiner: Richards; N. Drew
Assistant Examiner: Luu; An T.
Attorney, Agent or Firm: Posz Law Group, PLC

Claims

What is claimed is:

1. A semiconductor device comprising: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor, wherein the current control circuit is disposed on the substrate, the substrate includes a first pad and a second pad, the current control circuit includes a first resistor, a second resistor, a control signal generation circuit, a first switching circuit, and a second switching circuit, the first resistor is disposed between the first pad and the output transistor, the second resistor is disposed between the second pad and the output transistor, and has a resistance higher than the first resistor, the control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor, the first switching circuit is disposed between both ends of the first resistor and the control signal generation circuit, the second switching circuit is disposed between both ends of the second resistor and the control signal generation circuit, and the first switching circuit or the second switching circuit is controlled to be in an on-state.

2. The device according to claim 1, wherein the second pad includes a plurality of second pad elements, the second resistor includes a plurality of second resistor elements, each second resistor element is disposed between the second pad element and the output transistor, and the second switching circuit is disposed between both ends of one of the second resistor elements and the control signal generation circuit.

3. The device according to claim 1, wherein the current control circuit further includes: a third resistor disposed between the first pad and the output transistor and having a resistance higher than the first resistor; a third switching circuit coupled in series with the third resistor; and a fourth switching circuit coupled in series with the second resistor, and the third switching circuit and the fourth switching circuit are independently controlled to switch between an on-state and an off-state.

4. The device according to claim 3, wherein the third resistor includes a plurality of third resistor elements, the third switching circuit includes a plurality of third switching devices, each third resistor element is disposed between the first pad and the output transistor, and has a resistance higher than the first resistor, and each third switching circuit device couples in series with the third resistor element.

5. The device according to claim 3, wherein the current control circuit further includes a selection circuit, the selection circuit includes a first trimming resistor corresponding to the third switching circuit and a second trimming resistor corresponding to the fourth switching circuit, the selection circuit outputs an on-state instruction signal to the third switching circuit in a case where the first trimming resistor is cut off, and the selection circuit outputs another on-state instruction signal to the fourth switching circuit in a case where the second trimming resistor is cut off.

6. The device according to claim 3, wherein the current control circuit further includes a selection circuit, the selection circuit is capable of memorizing an on-off instruction state of each of the third and fourth switching circuits, and the selection circuit outputs an instruction signal corresponding to the on-off instruction state to each of the third and fourth switching circuits.

7. The device according to claim 1, wherein the first switching circuit includes a pad side first switching device and an output transistor side first switching device, the second switching circuit includes a pad side second switching device and an output transistor side second switching device, the pad side first switching device is disposed between a pad side first end of the first resistor and the control signal generation circuit, the output transistor side first switching device is disposed between an output transistor side first end of the first resistor and the control signal generation circuit, the pad side second switching device is disposed between a pad side second end of the second resistor and the control signal generation circuit, and the output transistor side second switching device is disposed between an output transistor side second end of the second resistor and the control signal generation circuit.

8. The device according to claim 7, wherein the output transistor side first switching device and the output transistor side second switching device are provided by a common output transistor side switching device.

9. The device according to claim 1, wherein the first resistor and the second resistor disposed on the semiconductor substrate are arranged side by side to direct a same direction.

10. The device according to claim 1, wherein the control signal generation circuit includes: a first transistor having a first terminal, a second terminal and a control terminal; a second transistor having a first terminal, a second terminal and a control terminal; a third transistor having a first terminal, a second terminal and a control terminal; a fourth transistor having a first terminal, a second terminal and a control terminal; a first constant current circuit; a second constant current circuit; and a predetermined power source line, the first terminal of the first transistor is coupled with a pad side first end of the first resistor through the first switching circuit or a pad side second end of the second resistor through the second switching circuit, the control terminal of the first transistor is coupled with the control terminal of the second transistor, the first terminal of the second transistor is coupled with an output transistor side first end of the first resistor through the first switching circuit, or an output transistor side second end of the second resistor through the second switching circuit, the first terminal and the second terminal of the third transistor are coupled between the second terminal of the first transistor and the power source line, the control terminal of the third transistor is coupled with the control terminal of the fourth transistor, the first terminal and the second terminal of the fourth transistor are coupled between a control terminal of the output transistor and the power source line, the first constant current circuit is capable of flowing a first current to the second transistor, and the second constant current circuit is capable of flowing a second current to the fourth transistor through the control terminal of the output transistor.

11. A semiconductor device comprising: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor, wherein the current control circuit is disposed on the substrate, the substrate includes a first pad and a second pad, the current control circuit includes a first resistor, a second resistor, a control signal generation circuit, a first switching circuit and a second switching circuit, the first resistor is disposed between the first pad and the output transistor, the first resistor has a full voltage between both ends of the first resistor and a partial voltage between a middle portion of the first resistor and one end of the first resistor, the full voltage and the partial voltage being retrievable, the second resistor is disposed between the second pad and the output transistor, and has a resistance higher than the first resistor, the control signal generation circuit generates a control signal to the output transistor based on one of the full voltage or the partial voltage of the first resistor and a voltage of both ends of the second resistor, the first switching circuit includes a pad side first switching device, a middle portion first switching device, and an output transistor side first switching device, the pad side first switching device is disposed between a pad side first end of the first resistor and the control signal generation circuit, the middle portion first switching device is disposed between the middle portion of the first resistor and the control signal generation circuit, the output transistor side first switching device is disposed between an output transistor side first end of the first resistor and the control signal generation circuit, the second switching circuit is disposed between both ends of the second resistor and the control signal generation circuit, the pad side first switching device or the second switching circuit is controlled to be in an on-state, and the output transistor side first switching device and the middle portion switching device are independently controlled to switch between an on-state and an off-state.

12. The device according to claim 11, wherein the middle portion includes a plurality of middle sections so that a plurality of partial voltages between the middle sections and the one end of the first resistor are retrievable, the middle portion first switching device includes a plurality of middle portion first switching elements, and each middle portion first switching element is disposed between the middle section of the first resistor and the control signal generation circuit.

13. The device according to claim 11, wherein the current control circuit further includes a selection circuit, the selection circuit includes a first trimming resistor corresponding to the pad side first switching device, a second trimming resistor corresponding to the middle portion first switching device, a third trimming resistor corresponding to the output transistor side first switching device, the selection circuit outputs an on-state instruction signal to the pad side first switching device in a case where the first trimming resistor is cut off, the selection circuit outputs another on-state instruction signal to the middle portion switching device in a case where the second trimming resistor is cut off, and the selection circuit outputs further another on-state instruction signal to the output transistor side first switching device in a case where the third trimming resistor is cut off.

14. The device according to claim 11, wherein the current control circuit further includes a selection circuit, the selection circuit is capable of memorizing an on-off instruction state of each of the pad side first switching device, the middle portion first switching device and the output transistor side first switching device, and the selection circuit outputs an instruction signal corresponding to the on-off instruction state to each of the pad side first switching device, the middle portion first switching device and the output transistor side first switching device.

15. The device according to claim 11, wherein the first resistor and the second resistor disposed on the semiconductor substrate are arranged side by side to direct a same direction.

16. A semiconductor device comprising: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor, wherein the current control circuit is disposed on the substrate, the substrate includes a pad, the current control circuit includes a first resistor, a second resistor, a control signal generation circuit, a first switching circuit and a second switching circuit, the first resistor and the second resistor are disposed in series between the pad and the output transistor, the second resistor has a resistance higher than the first resistor, the control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor, the first switching circuit is disposed between both ends of the first resistor and the control signal generation circuit, the second switching circuit is disposed between both ends of the second resistor and the control signal generation circuit, and the first switching circuit or the second switching circuit is controlled to be in an on-state.

17. The device according to claim 16, wherein the control signal generation circuit includes: a first transistor having a first terminal, a second terminal and a control terminal; a second transistor having a first terminal, a second terminal and a control terminal; a third transistor having a first terminal, a second terminal and a control terminal; a fourth transistor having a first terminal, a second terminal and a control terminal; a first constant current circuit; a second constant current circuit; and a predetermined power source line, the first terminal of the first transistor is coupled with a pad side first end of the first resistor or a pad side second end of the second resistor, the control terminal of the first transistor is coupled with the control terminal of the second transistor, the first terminal of the second transistor is coupled with an output transistor side first end of the first resistor or an output transistor side second end of the second resistor, the first terminal and the second terminal of the third transistor are coupled between the second terminal of the first transistor and the power source line, the control terminal of the third transistor is coupled with the control terminal of the fourth transistor, the first terminal and the second terminal of the fourth transistor are coupled between a control terminal of the output transistor and the power source line, the first constant current circuit is capable of flowing a first current to the second transistor, and the second constant current circuit is capable of flowing a second current to the fourth transistor through the control terminal of the output transistor.

18. The device according to claim 16, wherein at least one of the first constant current circuit and the second constant current circuit is capable of adjusting the first or second current.

19. A semiconductor device comprising: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor, wherein the current control circuit is disposed on the substrate, the substrate includes a pad, the current control circuit includes a first resistor, a second resistor, and a control signal generation circuit, the first resistor and the second resistor are disposed in series between the pad and the output transistor, the second resistor has a resistance higher than the first resistor, the control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor, the control signal generation circuit includes: a first resistor side first transistor having a first terminal, a second terminal and a control terminal; a second resistor side first transistor having a first terminal, a second terminal and a control terminal; a first resistor side second transistor having a first terminal, a second terminal and a control terminal; a second resistor side second transistor having a first terminal, a second terminal and a control terminal; a third transistor having a first terminal, a second terminal and a control terminal; a fourth transistor having a first terminal, a second terminal and a control terminal; a first constant current circuit; a second constant current circuit; and a predetermined power source line, the first terminal of the first resistor side first transistor is coupled with a pad side first end of the first resistor, the first terminal of the second resistor side first transistor is coupled with a pad side second end of the second resistor, the first terminal of the first resistor side second transistor is coupled with an output transistor side first end of the first resistor, the first terminal of the second resistor side second transistor is coupled with an output transistor side second end of the second resistor, the control terminal of the first resistor side first transistor is coupled with the control terminal of the first resistor side second transistor, the control terminal of the second resistor side first transistor is coupled with the control terminal of the second resistor side second transistor, the first switching circuit is disposed between the first resistor side first transistor and the third transistor, and further, disposed between the first resistor side second transistor and the third transistor, the second switching circuit is disposed between the second resistor side first transistor and the fourth transistor, and further, disposed between the second resistor side second transistor and the fourth transistor, the first switching circuit or the second switching circuit is controlled to be in an on-state, the first terminal and the second terminal of the third transistor are coupled between the first switching circuit and the power source line, the control terminal of the third transistor is coupled with the control terminal of the fourth transistor, the first terminal and the second terminal of the fourth transistor are coupled between a control terminal of the output transistor and the power source line, the first constant current circuit is capable of flowing a first current to the first resistor side second transistor and the second resistor side second transistor, and the second constant current circuit is capable of flowing a second current to the fourth transistor through the control terminal of the output transistor.

20. The device according to claim 19, wherein a current ratio between the second resistor side second transistor and the second resistor side first transistor is smaller than a current ratio between the first resistor side second transistor and the first resistor side first transistor.

21. The device according to claim 19, wherein at least one of the first constant current circuit and the second constant current circuit is capable of adjusting the first or second current.

22. A semiconductor device comprising: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor, wherein the current control circuit is disposed on the substrate, the substrate includes a first pad and a second pad, the current control circuit includes a first resistor, a second resistor, and a control signal generation circuit, the first resistor is disposed between the first pad and the output transistor, the second resistor is disposed between the second pad and the output transistor, and has a resistance higher than the first resistor, the control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor, the control signal generation circuit includes: a first resistor side first transistor having a first terminal, a second terminal and a control terminal; a second resistor side first transistor having a first terminal, a second terminal and a control terminal; a first resistor side second transistor having a first terminal, a second terminal and a control terminal; a second resistor side second transistor having a first terminal, a second terminal and a control terminal; a third transistor having a first terminal, a second terminal and a control terminal; a fourth transistor having a first terminal, a second terminal and a control terminal; a first constant current circuit; a second constant current circuit; and a predetermined power source line, the first terminal of the first resistor side first transistor is coupled with a pad side first end of the first resistor, the first terminal of the second resistor side first transistor is coupled with a pad side second end of the second resistor, the first terminal of the first resistor side second transistor is coupled with an output transistor side first end of the first resistor, the first terminal of the second resistor side second transistor is coupled with an output transistor side second end of the second resistor, the control terminal of the first resistor side first transistor is coupled with the control terminal of the first resistor side second transistor, the control terminal of the second resistor side first transistor is coupled with the control terminal of the second resistor side second transistor, the first switching circuit is disposed between the first resistor side first transistor and the third transistor, and further, disposed between the first resistor side second transistor and the third transistor, the second switching circuit is disposed between the second resistor side first transistor and the fourth transistor, and further, disposed between the second resistor side second transistor and the fourth transistor, the first switching circuit or the second switching circuit is controlled to be in an on-state, the first terminal and the second terminal of the third transistor are coupled between the first switching circuit and the power source line, the control terminal of the third transistor is coupled with the control terminal of the fourth transistor, the first terminal and the second terminal of the fourth transistor are coupled between a control terminal of the output transistor and the power source line, the first constant current circuit is capable of flowing a first current to the first resistor side second transistor and the second resistor side second transistor, and the second constant current circuit is capable of flowing a second current to the fourth transistor through the control terminal of the output transistor.

23. The device according to claim 22, wherein a current ratio between the second resistor side second transistor and the second resistor side first transistor is smaller than a current ratio between the first resistor side second transistor and the first resistor side first transistor.

24. The device according to claim 22, wherein at least one of the first constant current circuit and the second constant current circuit is capable of adjusting the first or second current.

Description

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based on Japanese Patent Applications No. 2006-113358 filed on Apr. 17, 2006, and No. 2006-304147 filed on Nov. 9, 2006, the disclosures of which are incorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device having an output transistor and a current control circuit.

BACKGROUND OF THE INVENTION

An air bag ECU (Electronic Control Unit) develops an air bag by flowing a constant electric current (e.g., an electric current of about 1 Ampere to 2 Amperes) for ignition to a squib when it is judged that a collision, etc. are caused in a vehicle. A constant electric current circuit for this air bag ignition can be constructed by a circuit similar to an overcurrent protecting circuit shown in, for example, JP-A-2005-252968. Concretely, as shown in FIG. 20, the constant electric current circuit is constructed as an IC having transistors T1 to T11, MOSFET M1, constant electric current circuit CC1 and shunt resistor Rs. Resistor RL in this figure equivalently shows electric characteristics of the squib as a load.

When an output electric current Io is flowed to resistor RL through shunt resistor Rs and MOSFET M1, an electric current ratio of transistors T7 and T8 is changed in accordance with a voltage between terminals of shunt resistor Rs. Transistors T9 and T10 constitute a current mirror circuit, and the same electric current as transistor T7 is flowed to this transistor T9. On the other hand, transistor T5 connected in series to transistor T10 outputs a constant electric current. As its result, the gate voltage of MOSFET M1 is controlled on the basis of the voltage between terminals of shunt resistor Rs, and output electric current Io is constantly controlled. A circuit for detecting the electric current by using the shunt resistor is disclosed in JP-A-10-75598 (corresponding to EP 0827266-B1), JP-A-2000-131369 and JP-A-2000-166279 (corresponding to U.S. Pat. No. 6,198,315).

In FIG. 20, when shunt resistor Rs is formed by wiring of aluminum, etc., the resistance value of shunt resistor Rs is dispersed by dispersion of sheet resistance, and the controlled constant electric current value is shifted from a target value. Further, the above constant electric current circuit performs no constant electric current operation if there is no predetermined electric potential difference between the terminals of shunt resistor Rs. Therefore, in an inspecting process after assembly of IC, a load electrically equivalent to the load connected at the real using time is connected, and the operation and the constant electric current value are confirmed. However, in a wafer inspecting process, the inspection is made by making a probe come in contact with a pad on a wafer. Therefore, when the electric current is increased (e.g., when the electric current exceeds several tens milliamperes to several hundreds milliamperes), it becomes difficult to make the inspection.

Thus, it is required for a semiconductor integrated circuit device to have sufficiently controlled electric current value and to make the inspection in the inspecting process before assembly even when a comparatively large electric current is controlled.

SUMMARY OF THE INVENTION

In view of the above-described problem, it is an object of the present disclosure to provide a semiconductor device having an output transistor and a current control circuit.

According to a first aspect of the present disclosure, a semiconductor device includes: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor. The current control circuit is disposed on the substrate. The substrate includes a first pad and a second pad. The current control circuit includes a first resistor, a second resistor, a control signal generation circuit, a first switching circuit, and a second switching circuit. The first resistor is disposed between the first pad and the output transistor. The second resistor is disposed between the second pad and the output transistor, and has a resistance higher than the first resistor. The control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor. The first switching circuit is disposed between both ends of the first resistor and the control signal generation circuit. The second switching circuit is disposed between both ends of the second resistor and the control signal generation circuit. The first switching circuit or the second switching circuit is controlled to be in an on-state.

When the device is tested in a device test process before the device is assembled, the first pad is opened, and a predetermined voltage is applied to the second. In this test process, the first switching circuit turns off, and the second switching circuit turns on. A current flows from the second pad to the output transistor through the second resistor. Thus, the voltage of both ends of the second resistor is inputted into the control signal generation circuit through the second switching circuit.

The control signal generation circuit controls the current flowing through the output transistor based on the voltage of the both ends of the second resistor. Since the second resistor has the resistance higher than the first resistor, the current control circuit can be operated with a comparative small current in the device test process. Thus, the operation of the device and the output current of the output transistor are determined in the device test process.

In an assembling process, the first pad is connected to, for example, a lead electrode of a lead frame with a bonding wire. Further, if necessary, the second pad is connected to the lead electrode or the like in order to adjust the resistance. In this case, the first switching circuit turns on, and the second switching circuit turns off. When only the first pad is connected to the lead electrode or the like, the current flows from the first pad to the output transistor through the first resistor. In addition, when the second pad is also connected to the lead electrode or the like, the current additionally flows from the second pad to the output transistor through the second resistor so that the first resistor and the second resistor are connected in parallel together.

The voltage of both ends of the first resistor or the voltage of the first resistor together with the second resistor is inputted into the control signal generation circuit through the first switching circuit, so that the control signal generation circuit controls the current flowing through the output transistor based on the inputted voltage. In this case, the resistance used for current control is changeable, i.e., the inputted voltage can be controlled, by connecting or disconnecting the second pad and the lead electrode or the like. Thus, the output current of the output transistor is adjusted.

Thus, the above device can be tested with a comparative small current, and can be used with a comparative large current. Further, the output current of the device is adjustable.

According to a second aspect of the present disclosure, a semiconductor device includes: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor. The current control circuit is disposed on the substrate. The substrate includes a first pad and a second pad. The current control circuit includes a first resistor, a second resistor, a control signal generation circuit, a first switching circuit and a second switching circuit. The first resistor is disposed between the first pad and the output transistor. The first resistor has a full voltage between both ends of the first resistor and a partial voltage between a middle portion of the first resistor and one end of the first resistor, the full voltage and the partial voltage being retrievable. The second resistor is disposed between the second pad and the output transistor, and has a resistance higher than the first resistor. The control signal generation circuit generates a control signal to the output transistor based on one of the full voltage or the partial voltage of the first resistor and a voltage of both ends of the second resistor. The first switching circuit includes a pad side first switching device, a middle portion first switching device, and an output transistor side first switching device. The pad side first switching device is disposed between a pad side first end of the first resistor and the control signal generation circuit. The middle portion first switching device is disposed between the middle portion of the first resistor and the control signal generation circuit. The output transistor side first switching device is disposed between an output transistor side first end of the first resistor and the control signal generation circuit. The second switching circuit is disposed between both ends of the second resistor and the control signal generation circuit. The pad side first switching device or the second switching circuit is controlled to be in an on-state. The output transistor side first switching device and the middle portion switching device are independently controlled to switch between an on-state and an off-state.

In the above device, in the in a device test process, the first pad is opened, and the predetermined test voltage is applied to the second pad. At this time, the first switching circuit turns off, and the second switching circuit turns on. The voltage of both ends of the second resistor is inputted into the control signal generation circuit through the second switching circuit. Thus, the current control circuit can be operated with a comparative small current in the device test process. Thus, the operation of the device and the output current of the output transistor are determined in the device test process.

In the assembling process, the first pad is connected to the lead electrode or the like. In this case, the pad side first switching device turns on, and the second switching circuit turns off. Further, the middle portion first switching device and/or the output transistor side first switching device selectively turn on if necessary. Thus, the full voltage or the partial voltage is inputted into the control signal generation circuit through the first switching circuit so that the control signal generation circuit controls the current flowing through the output transistor based on the inputted voltage. In this case, the resistance used for current control is changeable, i.e., the inputted voltage (i.e., the full voltage or the partial voltage) can be controlled, by switching the middle portion first switching device and/or the output transistor side first switching device. Thus, the output current of the output transistor is adjusted. In addition, the second pad may be connected to the lead electrode or the like. In this case, the first resistor and the second resistor are connected in parallel together, so that the current additionally flows from the second pad to the output transistor through the second resistor. The voltage of both ends of the first resistor or the voltage of the first resistor together with the second resistor is inputted into the control signal generation circuit through the first switching circuit, so that the output current of the output transistor is much adjusted.

Thus, the above device can be tested with a comparative small current, and can be used with a comparative large current. Further, the output current of the device is adjustable.

According to a third aspect of the present disclosure, a semiconductor device includes: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor. The current control circuit is disposed on the substrate. The substrate includes a pad. The current control circuit includes a first resistor, a second resistor, a control signal generation circuit, a first switching circuit and a second switching circuit. The first resistor and the second resistor are disposed in series between the pad and the output transistor. The second resistor has a resistance higher than the first resistor. The control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor. The first switching circuit is disposed between both ends of the first resistor and the control signal generation circuit. The second switching circuit is disposed between both ends of the second resistor and the control signal generation circuit. The first switching circuit or the second switching circuit is controlled to be in an on-state.

The above device can be tested with a comparative small current, and can be used with a comparative large current. Further, the output current of the device is adjustable.

According to a fourth aspect of the present disclosure, a semiconductor device includes: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor. The current control circuit is disposed on the substrate. The substrate includes a pad. The current control circuit includes a first resistor, a second resistor, and a control signal generation circuit. The first resistor and the second resistor are disposed in series between the pad and the output transistor. The second resistor has a resistance higher than the first resistor. The control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor. The control signal generation circuit includes: a first resistor side first transistor having a first terminal, a second terminal and a control terminal; a second resistor side first transistor having a first terminal, a second terminal and a control terminal; a first resistor side second transistor having a first terminal, a second terminal and a control terminal; a second resistor side second transistor having a first terminal, a second terminal and a control terminal; a third transistor having a first terminal, a second terminal and a control terminal; a fourth transistor having a first terminal, a second terminal and a control terminal; a first constant current circuit; a second constant current circuit; and a predetermined power source line. The first terminal of the first resistor side first transistor is coupled with a pad side first end of the first resistor. The first terminal of the second resistor side first transistor is coupled with a pad side second end of the second resistor. The first terminal of the first resistor side second transistor is coupled with an output transistor side first end of the first resistor. The first terminal of the second resistor side second transistor is coupled with an output transistor side second end of the second resistor. The control terminal of the first resistor side first transistor is coupled with the control terminal of the first resistor side second transistor. The control terminal of the second resistor side first transistor is coupled with the control terminal of the second resistor side second transistor. The first switching circuit is disposed between the first resistor side first transistor and the third transistor, and further, disposed between the first resistor side second transistor and the third transistor. The second switching circuit is disposed between the second resistor side first transistor and the fourth transistor, and further, disposed between the second resistor side second transistor and the fourth transistor. The first switching circuit or the second switching circuit is controlled to be in an on-state. The first terminal and the second terminal of the third transistor are coupled between the first switching circuit and the power source line. The control terminal of the third transistor is coupled with the control terminal of the fourth transistor. The first terminal and the second terminal of the fourth transistor are coupled between a control terminal of the output transistor and the power source line. The first constant current circuit is capable of flowing a first current to the first resistor side second transistor and the second resistor side second transistor. The second constant current circuit is capable of flowing a second current to the fourth transistor through the control terminal of the output transistor.

The above device can be tested with a comparative small current, and can be used with a comparative large current. Further, the output current of the device is adjustable.

According to a fifth aspect of the present disclosure, a semiconductor device includes: a semiconductor substrate; an output transistor; and a current control circuit for controlling an output current of the output transistor. The current control circuit is disposed on the substrate. The substrate includes a first pad and a second pad. The current control circuit includes a first resistor, a second resistor, and a control signal generation circuit. The first resistor is disposed between the first pad and the output transistor. The second resistor is disposed between the second pad and the output transistor, and has a resistance higher than the first resistor. The control signal generation circuit generates a control signal to the output transistor based on one of a voltage of both ends of the first resistor and a voltage of both ends of the second resistor. The control signal generation circuit includes: a first resistor side first transistor having a first terminal, a second terminal and a control terminal; a second resistor side first transistor having a first terminal, a second terminal and a control terminal; a first resistor side second transistor having a first terminal, a second terminal and a control terminal; a second resistor side second transistor having a first terminal, a second terminal and a control terminal; a third transistor having a first terminal, a second terminal and a control terminal; a fourth transistor having a first terminal, a second terminal and a control terminal; a first constant current circuit; a second constant current circuit; and a predetermined power source line. The first terminal of the first resistor side first transistor is coupled with a pad side first end of the first resistor. The first terminal of the second resistor side first transistor is coupled with a pad side second end of the second resistor. The first terminal of the first resistor side second transistor is coupled with an output transistor side first end of the first resistor. The first terminal of the second resistor side second transistor is coupled with an output transistor side second end of the second resistor. The control terminal of the first resistor side first transistor is coupled with the control terminal of the first resistor side second transistor. The control terminal of the second resistor side first transistor is coupled with the control terminal of the second resistor side second transistor. The first switching circuit is disposed between the first resistor side first transistor and the third transistor, and further, disposed between the first resistor side second transistor and the third transistor. The second switching circuit is disposed between the second resistor side first transistor and the fourth transistor, and further, disposed between the second resistor side second transistor and the fourth transistor. The first switching circuit or the second switching circuit is controlled to be in an on-state. The first terminal and the second terminal of the third transistor are coupled between the first switching circuit and the power source line. The control terminal of the third transistor is coupled with the control terminal of the fourth transistor. The first terminal and the second terminal of the fourth transistor are coupled between a control terminal of the output transistor and the power source line. The first constant current circuit is capable of flowing a first current to the first resistor side second transistor and the second resistor side second transistor. The second constant current circuit is capable of flowing a second current to the fourth transistor through the control terminal of the output transistor.

The above device can be tested with a comparative small current, and can be used with a comparative large current. Further, the output current of the device is adjustable.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description made with reference to the accompanying drawings. In the drawings:

FIG. 1 is a circuit diagram showing a semiconductor integrated circuit device according to a first embodiment;

FIG. 2 is a schematic view showing layout of a pad and a shunt resistor according to the first embodiment;

FIG. 3 is a circuit diagram showing a semiconductor integrated circuit device according to a second embodiment;

FIG. 4 is a schematic view showing layout of a pad and a shunt resistor according to the second embodiment;

FIG. 5 is a circuit diagram showing a semiconductor integrated circuit device according to a third embodiment;

FIG. 6 is a schematic view showing layout of a pad and a shunt resistor according to the third embodiment;

FIG. 7 is a circuit diagram showing a semiconductor integrated circuit device according to a fourth embodiment;

FIG. 8 is a schematic view showing layout of a pad and a shunt resistor according to the fourth embodiment;

FIG. 9 is a circuit diagram showing a semiconductor integrated circuit device according to a fifth embodiment;

FIG. 10 is a circuit diagram showing a semiconductor integrated circuit device according to a sixth embodiment;

FIG. 11 is a circuit diagram showing a semiconductor integrated circuit device according to a seventh embodiment;

FIG. 12 is a schematic view showing layout of a pad and a shunt resistor according to the seventh embodiment;

FIG. 13 is a circuit diagram showing a semiconductor integrated circuit device according to an eighth embodiment;

FIG. 14 is a circuit diagram showing a semiconductor integrated circuit device according to a ninth embodiment;

FIG. 15 is a schematic view showing layout of a pad and a shunt resistor according to the ninth embodiment;

FIG. 16 is a circuit diagram showing a semiconductor integrated circuit device according to a tenth embodiment;

FIG. 17 is a circuit diagram showing a semiconductor integrated circuit device according to an eleventh embodiment;

FIG. 18 is a circuit diagram showing a semiconductor integrated circuit device according to a twelfth embodiment;

FIG. 19 is a circuit diagram showing a semiconductor integrated circuit device according to a thirteenth embodiment; and

FIG. 20 is a circuit diagram showing a semiconductor integrated circuit device according to a prior art.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

First Embodiment Mode

FIG. 1 shows the electric construction of an IC for air bag ignition having a constant electric current circuit. This IC 11 (semiconductor integrated circuit device) is arranged in an air bag ECU, and is operated so as to flow a constant electric current (e.g., an electric current of 1.4 Amperes as a target value) to a squib (which is equivalently shown by a symbol of resistance in FIG. 1 and is called load RL in the following description) to develop the air bag of a vehicle when an ignition command signal is inputted.

A chip 12 is mounted to a lead frame of manufactured IC 11. A bonding pad Pm (hereinafter called a pad) formed on this chip 12 and a lead electrode Tb of the lead frame, and a pad Po and a lead electrode To are respectively connected by bonding using a wire 13. Further, a pad Ps and the lead electrode Tb are also connected by the wire 13 in accordance with necessity to sufficiently adapt a constant electric current value as described later (shown by a broken line in FIG. 1). The lead electrode Tb of IC 11 is an electric power source terminal to which an electric power source voltage Vb is applied from an electric power source 14 such as a battery, etc. in the real using state of IC 11. The lead electrode To is an output terminal to which load RL is connected in the real using state. Further, pads Pm, Ps respectively correspond to first and second pads.

The above pads Pm, Ps, Po, MOSFET M1 (corresponding to an output transistor), an electric current control circuit 15, etc. are formed in the chip 12 (corresponding to a semiconductor substrate). MOSFET M1 of an N channel type is set to so-called high side connection, and its source is connected to pad Po. The electric current control circuit 15 controls a gate voltage of the above MOSFET M1, and is constructed from a control signal generating circuit 16, shunt resistors Rm, Rs and switch circuits SW1 to SW4.

Shunt resistor Rm (corresponding to a first resistor) is formed between pad Pm and the drain of MOSFET M1, and functions as an electric current detecting means in the real using state of IC 11. Shunt resistor Rs (corresponding to a second resistor) is formed between pad Ps and the drain of MOSFET M1, and functions as the electric current detecting means in a wafer inspection. When pad Ps and lead electrode Tb are connected in an assembly process, shunt resistor Rs attains a state connected in parallel with shunt resistor Rm, and also functions as the electric current detecting means in the real using state of IC 11. These shunt resistors Rm, Rs are formed by aluminum wiring.

FIG. 2 shows a layout example of pads Pm, Ps and shunt resistors Rm, Rs. Since a large electric current (e.g., 1.4 A) is flowed to pad Pm and shunt resistor Rm in the real using state of IC 11, the area of pad Pm and the pattern width of shunt resistor Rm are set so as to sufficiently flow the above electric current. In contrast to this, since only a small electric current (e.g., about 1.4 Amperes.times.Rm/Rs and Rm<Rs as described later) is flowed to pad Ps and shunt resistor Rs, the area of pad Ps and the pattern width of shunt resistor Rs are set to be comparatively small. The respective aluminum wiring patterns constituting shunt resistor Rm and shunt resistor Rs are arranged and formed in the same directions as forming directions of pads Pm, Ps. At their both ends, sensing terminals Jm1, Jm2 and sensing terminals Js1, Js2 are respectively formed.

The control signal generating circuit 16 shown in FIG. 1 is constructed from transistors T1 to T11 and a constant electric current circuit CC1, and generates the gate voltage (control signal) of MOSFET M1 on the basis of an inputted voltage (one of the voltage between both terminals of shunt resistor Rm and the voltage between both terminals of shunt resistor Rs). Voltage Vcc shown within this figure is a control voltage, and voltage Vcp is a raising voltage higher by a threshold voltage or more of MOSFET M1 than at least electric power source voltage Vb.

An output electric current of constant electric current circuit CC1 is returned by a current mirror circuit constructed by transistors T1, T2, and is flowed to transistors T3, T6, T11. The electric current flowed to transistor T6 is returned by a current mirror circuit constructed by transistors T4, T5, and is flowed to transistor T10. The collectors of transistors T5, T10 are connected to the gate of MOSFET M1, and transistors T5, T11 are respectively operated as a constant electric current circuit. The respective collectors of PNP type transistors T7, T8 having bases connected to each other are respectively connected to the ground through transistors T11, T9. The above transistors T9 and T10 constitute a current mirror circuit.

Switch circuits SW1, SW2 (corresponding to a first switch circuit) are respectively formed in signal paths from both terminals (sensing terminals Jm1, Jm2) of shunt resistor Rm to the respective emitters of transistors T7, T8 of the control signal generating circuit 16. Switch circuits SW3, SW4 (corresponding to a second switch circuit) are respectively formed in signal paths from both terminals (sensing terminals Js1, Js2) of shunt resistor Rs to the respective emitters of transistors T7, T8 of the control signal generating circuit 16.

These switch circuits SW1 to SW4 are constructed from two N channel MOSFETs connected in series and having gates connected to each other, and two Zener diodes connected in series so as to have polarities reverse to each other between their gates and sources. One MOSFET functions as a switch, and the other MOSFET functions as a back flow preventing diode. Signal Sm is given to the gate of MOSFET as control terminals of switch circuits SW1, SW2. Signal Ss is given to the gate of MOSFET as control terminals of switch circuits SW3, SW4.

The operation of this embodiment mode will next be explained.

At a wafer inspecting time of IC 11, signal Sm attains an L-level and signal Ss attains an H-level. Switch circuits SW1, SW2 are turned off, and switch circuits SW3, SW4 are turned on. At this time, a both-end voltage of shunt resistor Rs is inputted to the control signal generating circuit 16. In contrast to this, at the real using time of manufactured IC 11, signal Sm attains an H-level and signal Ss attains an L-level. Switch circuits SW1, SW2 are turned on and switch circuits SW3, SW4 are turned off. At this time, a both-end voltage of shunt resistor Rm is inputted to the control signal generating circuit 16. An unillustrated logic circuit formed on chip 12 outputs signals Sm, Ss of the above levels in accordance with an operating mode (normal mode and test mode).

In a wafer inspecting process, a probe connected to electric power source 14 is applied to pad Ps of chip 12, and a probe connected to load RL is applied to pad Po. At this time, electric current Io is flowed from electric power source 14 to load RL through pad Ps of chip 12, shunt resistor Rs, MOSFET M1 and pad Po. An adding voltage of the voltage between the base and the emitter of transistor T8 and the both-end voltage of shunt resistor Rs is applied between the base and the emitter of transistor T7. Therefore, when output electric current Io is increased, the collector electric currents of transistors T7, T9 are increased. In contrast to this, since transistor T5 continuously outputs a constant electric current, output electric current Io is increased and the collector electric potential of transistor T10, i.e., the gate electric potential of MOSFET M1 is lowered. Constant electric current control is performed so as to constantly set the voltage between the terminals of shunt resistor Rs.

Since the resistance value of shunt resistor Rs is set to be higher than the resistance value of shunt resistor Rm used in the real using state of IC 11, output electric current Ios in the wafer inspection becomes Rm/Rs (<1) times output electric current Iom (1.4 A) in the real using state. As its result, the electric current control circuit 15 can be normally operated even in the electric current (e.g., several ten mA to several hundred mA) able to be flowed by a probe tester, and the operation of chip 12 and the output electric current value can be confirmed in the wafer inspection.

When the output electric current value measured in this wafer inspecting process is compared with the electric current value on design, it is possible to presume a shift (dispersion) of the resistance value of shunt resistor Rs in a manufacturing process of the IC 11, in its turn, shunt resistor Rm. When it is judged that the resistance value of shunt resistor Rm is equal to a target value (design value), pad Pm and lead electrode Tb are connected and pad Ps is opened in a subsequent assembly process. In contrast to this, when it is judged that the resistance value of shunt resistor Rm is higher than the target value (design value), pad Pm and lead electrode Tb, and pad Ps and lead electrode Tb are respectively connected in the subsequent assembly process.

As its result, at the real using time of manufactured IC 11, electric current Io is flowed from electric power source 14 to load RL through lead electrode Tb, pad Pm of chip 12, shunt resistor Rm, MOSFET M1, pad Po and lead electrode To. Further, when pad Ps and lead electrode Tb are connected, electric current Io is flowed from electric power source 14 to load RL through lead electrode Tb, pad Ps of chip 12, shunt resistor Rs, MOSFET M1, pad Po and lead electrode To. A constant electric current operation using the control signal generating circuit 16 is similar to the operation in the above wafer inspection.

When pad Ps and lead electrode Tb are connected, it attains a state in which shunt resistors Rm and Rs are connected in parallel. Accordingly, one of Rm and RmRs/(Rm+Rs) can be selected as the resistance value of the shunt resistor by the existence or nonexistence of connection of pad Ps and lead electrode Tb. Accordingly, output electric current Io of IC 11 can be adjusted to (1+Rm/Rs) times by the existence or nonexistence of connection of pad Ps and lead electrode Tb.

As explained above, shunt resistor Rs having a resistance value higher than that of shunt resistor Rm used at the real using time is formed in chip 12 of IC 11 of this embodiment mode. In the wafer inspecting process, constant electric current control is performed by using the both-end voltage of shunt resistor Rs. Accordingly, the constant electric current operation and the output electric current value can be confirmed by a comparatively small electric current able to appropriately execute the wafer inspection.

Further, shunt resistor Rs is also utilized in an adjustment of the output electric current value. Namely, in the assembly process, lead electrode Tb and pad Pm connected to shunt resistor Rm are connected and the existence or nonexistence of connection of lead electrode Tb and pad Ps connected to shunt resistor Rs is then further selected. Thus, the resistance value of the shunt resistor can be adjusted to two stages so that the output electric current value can be sufficiently adapted. Thus, an air bag can be more reliably developed in accordance with an ignition command signal.

Respective aluminum wiring patterns constituting shunt resistor Rm and shunt resistor Rs are mutually arranged and formed in the same direction. Accordingly, the shifts of both the resistance values in the manufacturing process of IC 11 have the same tendency. Accordingly, it is possible to presume the shift of the resistance value of shunt resistor Rm on the basis of the shift of the resistance value of shunt resistor Rs presumed from a result of the wafer inspection, and the output electric current value can be reliably sufficiently adapted in the assembly process.

A pair of sensing terminals Jm1, Jm2 and a pair of sensing terminals Js1, Js2 are respectively formed at respective both terminals of shunt resistor Rm and shunt resistor Rs. Switch circuits SW1, SW2 are respectively formed in signal paths from sensing terminals Jm1, Jm2 to the control signal generating circuit 16. Switch circuits SW3, SW4 are respectively formed in signal paths from sensing terminals Js1, Js2 to the control signal generating circuit 16. Thus, since the signal paths from the respective both terminals of shunt resistors Rm, Rs to the control signal generating circuit 16 are constructed by electrical symmetric circuits, no voltage error is easily caused in these signal paths even when the voltages between the terminals of shunt resistors Rm, Rs are small voltages.

Second Embodiment Mode

In an electric current control circuit 19 formed in a chip 18 of IC 17, terminals of MOSFET M1 side of shunt resistors Rm and Rs are electrically connected. Therefore, as shown in FIGS. 3 and 4, sensing terminal Js2 is omitted, and one commonized switch circuit SW5 (corresponding to first and second switch circuits) is formed in a signal path from sensing terminal Jm2 to the emitter of transistor T8 of the control signal generating circuit 16. This switch circuit SW5 is turned on at the wafer inspecting time of IC 17 and the real using time after manufacture.

In FIG. 2, sensing terminals Jm2, Js2 are formed in positions slightly shifted on the pad side from terminal positions of the respective aluminum wiring patterns (joining positions of both the aluminum