Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride Number:7,435,688 from the United States Patent and Trademark Office (PTO) owispatent

Title: Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

Abstract: The invention includes a semiconductor processing method. A first material comprising silicon and nitrogen is formed. A second material is formed over the first material, and the second material comprises silicon and less nitrogen, by atom percent, than the first material. An imagable material is formed on the second material, and patterned. A pattern is then transferred from the patterned imagable material to the first and second materials. The invention also includes a structure comprising a first layer of silicon nitride over a substrate, and a second layer on the first layer. The second layer comprises silicon and is free of nitrogen. The structure further comprises a third layer consisting essentially of imagable material on the second layer.

Patent Number: 7,435,688 Issued on 10/14/2008 to DeBoer,   et al.

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Inventors:	DeBoer; Scott Jeffrey (Boise, ID), Moore; John T. (Boise, ID)
Assignee:	Micron Technology, Inc. (Boise, ID)
Appl. No.:	10/161,134
Filed:	May 30, 2002

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Related U.S. Patent Documents

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	Application Number	Filing Date	Patent Number	Issue Date
	09488947	Jan., 2000	6440860

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Current U.S. Class:	438/736 ; 438/744
Current International Class:	H01L 21/467 (20060101)
Field of Search:	438/585,595,744

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