Title: Light irradiation type thermal processing apparatus
Abstract: In a light diffuser, a strong light diffusion processing is performed to a lamp corresponding part located in a vertical immediate downward direction of each of a plurality of flash lamps, and a weak light diffusion processing is performed to an inter-lamp corresponding part located between lamp corresponding parts adjacent to each other. Thereby, the light transmittance of the lamp corresponding part is lower than that of the inter-lamp corresponding part. Light that is emitted from each of the flash lamps and directed to a vertical immediate downward direction is diffused intensely, while reducing the degree of light diffusion at a location immediately below space between the adjacent flash lamps, thereby improving in-plane uniformity of illumination distribution on a semiconductor wafer. This enables to provide a thermal processing apparatus capable of improving in-plane uniformity of illumination distribution on a substrate.
Patent Number: 6,856,762 Issued on 02/15/2005 to Kusuda, et al.
| Inventors:
|
Kusuda; Tatsufumi (Kyoto, JP);
Murayama; Hiromi (Kyoto, JP);
Imaoka; Yasuhiro (Kyoto, JP)
|
| Assignee:
|
Dainippon Screen Mfg. Co., Ltd. (JP)
|
| Appl. No.:
|
645067 |
| Filed:
|
August 21, 2003 |
Foreign Application Priority Data
| Aug 21, 2002[JP] | 2002-240438 |
| Mar 27, 2003[JP] | 2003-088371 |
| Current U.S. Class: |
392/416; 219/390; 219/405; 219/411; 392/418 |
| Intern'l Class: |
F26B 019//00 |
| Field of Search: |
219/390,405,411
392/416,418
118/724,725,50.1,728,729
|
References Cited [Referenced By]
U.S. Patent Documents
| 4571486 | Feb., 1986 | Arai et al. | 438/799.
|
| 4649261 | Mar., 1987 | Sheets.
| |
| 6437290 | Aug., 2002 | Shao et al. | 219/390.
|
| Foreign Patent Documents |
| 57-162340 | Oct., 1982 | JP.
| |
| 59-169125 | Sep., 1984 | JP.
| |
| 60-258928 | Dec., 1985 | JP.
| |
| 63-166219 | Jul., 1988 | JP.
| |
| 2001-237195 | Aug., 2001 | JP.
| |
| 2002-110579 | Apr., 2002 | JP.
| |
| 2002-110580 | Apr., 2002 | JP.
| |
Other References
English translation of Abstract for Japanese Patent Application Laid Open
No. 2002-110579.
English translation of Abstract for Japanese Patent Application Laid Open
No. 2002-110580.
English translation of Abstract for Japanese Patent Application Laid Open
No. 2001-237195.
English translation of Abstract for Japanese Patent Application Laid Open
No. 57-162340.
English translation of Abstract for Japanese Patent Application Laid Open
No. 63-166219.
Japanese Patent Application Laid Open No. 59-169125 which corresponds to
U.S. Patent No. 4,571,486 (as listed above).
Japanese Patent Application Laid Open No. 60-258928 which corresponds to
U.S. Patent No. 4,649,261 (as listed above).
|
Primary Examiner: Fuqua; Shawntina
Attorney, Agent or Firm: Ostrolenk, Faber, Gerb & Soffen, LLP
Claims
What is claimed is:
1. A thermal processing apparatus to heat a substrate by irradiating light
to said substrate, comprising:
a light source consisting of a plurality of lamps arranged in a plane;
a hold element to hold a substrate at a location below said light source;
and
a diffusion plate that is disposed between said light source and a
substrate held by said hold element such that they are substantially
parallel with one another, said diffusion plate diffusing light emitted
from each of said plurality of lamps and directing it to said substrate;
wherein in said diffusion plate, the light transmittance of a lamp
corresponding part located in a vertical immediate downward direction of
each of said plurality of lamps is lower than the light transmittance of
an inter-lamp corresponding part located between said lamp corresponding
parts adjacent to each other.
2. The thermal processing apparatus according to claim 1 wherein
the light transmittance increases gradually from a central position of said
lamp corresponding part to a central position of said inter-lamp
corresponding part in said diffusion plate.
3. The thermal processing apparatus according to claim 1 wherein the light
transmittance of an end corresponding part located outside space in a
vertical immediate downward direction of an arrangement of said plurality
of lamps in said diffusion plate is higher than the light transmittance of
said lamp corresponding part.
4. A thermal processing apparatus to heat a substrate by irradiating light
to said substrate, comprising:
a light source consisting of a plurality of flash lamps arranged in a
plane;
a hold element to hold a substrate at a location below said light source;
and
a diffusion plate that is disposed between said light source and a
substrate held by said hold element such that they are substantially
parallel with one another, said diffusion plate diffusing light emitted
from each of said plurality of flash lamps and directing it to said
substrate, wherein
in said diffusion plate, the light transmittance of a lamp corresponding
part located in a vertical immediate downward direction of each of said
flash lamps is lower than the light transmittance of an inter-lamp
corresponding part located between said lamp corresponding parts adjacent
to each other.
5. The thermal processing apparatus according to claim 4 wherein
the light transmittance increases gradually from a central position of said
lamp corresponding part to a central position of said inter-lamp
corresponding part in said diffusion plate.
6. The thermal processing apparatus according to claim 4 wherein
said diffusion plate is a glass plate in which a geometrical pattern in a
ground glass state is formed in a region located above parts other than an
edge part of a substrate held by said hold element.
7. The thermal processing apparatus according to claim 6 wherein said
geometrical pattern is a stripe pattern.
8. The thermal processing apparatus according to claim 6 wherein said
geometrical pattern is a parallel crosses pattern.
9. The thermal processing apparatus according to claim 6 wherein said said
geometrical pattern is a woven bamboo pattern.
10. The thermal processing apparatus according to claim 4 wherein
each of said flash lamps is a xenon flash lamp, and
said hold element has an assist heating element to preheat a substrate to
be held.
11. A thermal processing apparatus to heat a substrate by irradiating light
to said substrate; comprising:
a light source comprising a plurality of flash lamps arranged in a plane;
a hold element to hold a substrate at a location below said light source;
and
a diffusion plate that is disposed between said light source and a
substrate held by said hold element such that they are substantially
parallel to one another, said diffusion plate diffusing light emitted from
each of said plurality of flash lamps and directing it to said substrate;
wherein in said diffusion plate, the light transmittance of a center
corresponding part located in a vertical immediate downward direction of
an arrangement of said plurality of flash lamps is lower than the light
transmittance of an end corresponding part located outside said center
corresponding part.
12. The thermal processing apparatus according to claim 11 wherein
said diffusion plate is a glass plate in which a geometrical pattern in a
ground glass state is formed in a region located above parts other than an
edge part of a substrate held by said hold element.
13. The thermal processing apparatus according to claim 11 wherein
each of said plurality of flash lamps is a xenon flash lamp, and
said hold element has an assist heating element to preheat a substrate to
be held.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a thermal processing apparatus that
performs thermal processing of a semiconductor wafer and glass substrate,
etc. (hereinafter referred to simply as a "substrate" in some cases) by
irradiating flash to the substrate.
2. Description of the Background Art
In an ion activation step of a semiconductor wafer after being subjected to
ion implantation, heretofore, there has been employed a thermal processing
apparatus such as a lamp annealing apparatus using halogen lamps. In such
a thermal processing apparatus, the ion activation of a semiconductor
wafer is carried out by heating (annealing) the semiconductor wafer to
temperatures of, for example, approximately 1000.degree. C. to
1100.degree. C. This thermal processing apparatus is configured so as to
elevate the temperature of the substrate at a speed of about several
hundreds of degrees (.degree. C.) per second, by utilizing the energy of
light irradiated from the halogen lamps.
Relating to the lamp annealing apparatus using halogen lamps, for example,
Japanese Patent Application Laid-Open Nos. 2002-110579 and 2002-110580
have proposed a technique of maintaining temperature uniformity on a wafer
with the use of a diffusion plate that is manufactured by grinding the
surface of a quartz plate so as to have a rough surface including a large
number of irregularities, alternatively, by processing a quartz plate so
as to contain a large number of fine pores.
However, even when ion activation of a semiconductor wafer is executed by
using the thermal processing apparatus that elevates the temperature of
the substrate at a speed of about several hundreds of degrees per second,
the profile of ions implanted into the semiconductor wafer becomes
gradual. That is, it has been found to cause the phenomenon that ions
diffuse by heat. At an occurrence of this phenomenon, even if ions are
implanted at high concentration into the semiconductor wafer surface, the
implanted ions may diffuse. This introduces the problem that it is
necessary to implant more ions than necessary.
In order to solve the above problem, for example, Japanese Patent
Application Laid-Open Nos. 59-169125 and 63-166219 have proposed such a
technique of elevating only the temperature of the surface of a
semiconductor wafer after being subjected to ion implantation in an
extremely short period of time (not exceeding several milliseconds) by
irradiating flash to the wafer surface with the use of xenon flash lamps,
etc. The ions will not have time to diffuse with the temperature elevation
in a very short time by the xenon flash lamps. This allows only the
execution of ion activation without causing a gradual profile of ions
implanted into the wafer.
In the thermal processing apparatus using the above xenon flash lamps, a
plurality of xenon flash lamps in the shape of a bar or the like are
arranged. Energy necessary for annealing increases remarkably as the
distance between these xenon flash lamps and the semiconductor wafer
increases. Therefore, from the viewpoint of energy saving, it is
unavoidable that the xenon flash lamps are close to the semiconductor
wafer to some degree. By doing so, however, part of the wafer surface
located immediately below the lamps will have a higher illumination than
other parts, thereby losing in-plane uniformity of temperature
distribution.
Further, although the region in which the plurality of xenon flash lamps
are arranged is considerably larger than the area of the semiconductor
wafer, the edge part of the semiconductor wafer has somewhat lower
illumination than the inside part thereof.
Although the lamp annealing apparatus using conventional halogen lamps
suffers from the same problem, it can employ such a solution that a wafer
is rotated to maintain in-plane uniformity of illumination distribution
because the time required for elevating the temperature up to a desired
temperature is relatively long.
Whereas in the thermal processing apparatus using the xenon flash lamps,
since the temperature elevation time by flash irradiation is extremely
short, even if a wafer is rotated, it is impossible to maintain in-plane
uniformity of illumination distribution. This introduces the problem that
in-plain uniformity of temperature distribution on the wafer surface is
impaired to cause variations in processing results.
SUMMARY OF THE INVENTION
The present invention is directed to a thermal processing apparatus that
heats a substrate by irradiating light to the substrate.
According to the present invention, a thermal processing apparatus includes
a light source, a hold element and a diffusion plate. The light source
consists of a plurality of lamps arranged in a plane. The hold element
holds a substrate at a location below the light source. The diffusion
plate is disposed between the light source and a substrate held by the
hold element such that they are substantially parallel with one another.
The diffusion plate diffuses light emitted from each of the plurality of
lamps and directs it to the substrate. In the diffusion plate, the light
transmittance of a center corresponding part located in a vertical
immediate downward direction of the arrangement of the plurality of lamps
is lower than the light transmittance of an end corresponding part located
outside the center corresponding part.
This allows for more intense diffusion of the light from the central part
in which the lamps are arranged, thereby improving in-plane uniformity of
illumination distribution on the substrate.
According to one aspect of the present invention, a thermal processing
apparatus includes a light source, a hold element and a diffusion plate.
The light source consists of a plurality of lamps arranged in a plane. The
hold element holds a substrate at a location below the light source. The
diffusion plate is disposed between the light source and a substrate held
by the hold element such that they are substantially parallel with one
another. The diffusion plate diffuses light emitted from each of the
plurality of lamps and directs it to the substrate. In the diffusion
plate, the light transmittance of a lamp corresponding part located in a
vertical immediate downward direction of each of the plurality of lamps is
lower than the light transmittance of an inter-lamp corresponding part
located between the lamp corresponding parts adjacent to each other.
The light that is emitted from each of the lamps and directed in a vertical
immediate downward direction is diffused intensely, whereas the degree of
light diffusion is reduced immediately below space between the adjacent
lamps, thereby improving in-plane uniformity of illumination distribution
on the substrate.
According to other aspect of the present invention, a thermal processing
apparatus includes a light source, a hold element and a diffusion plate.
The light source consists of a plurality of flash lamps arranged in a
plane. The hold element holds a substrate at a location below the light
source. The diffusion plate is disposed between the light source and a
substrate held by the hold element such that they are substantially
parallel with one another. The diffusion plate diffuses light emitted from
each of the plurality of flash lamps and directs it to the substrate.
By the presence of the diffusion plate for diffusing the light emitted from
each of the flash lamps and directing it to the substrate, it is possible
to improve in-plane uniformity of illumination distribution on a
substrate, which is attained by the flash lamps.
Accordingly, it is an object of the present invention to provide a thermal
processing apparatus capable of improving in-plane uniformity of
illumination distribution on a substrate.
These and other objects, features, aspects and advantages of the present
invention will become more apparent from the following detailed
description of the present invention when taken in conjunction with the
accompanying drawings.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a side sectional view illustrating the configuration of a thermal
processing apparatus according to a first preferred embodiment of the
present invention;
FIG. 2 is other side sectional view illustrating the configuration of the
thermal processing apparatus of the first preferred embodiment;
FIG. 3 is a diagram to explain a light diffuser of the first preferred
embodiment;
FIG. 4 is a schematic diagram showing the relationship between the
illumination of lights irradiated from flash lamps on a semiconductor
wafer surface in the absence of a light diffuser and the position in the
direction of arrangement of the flash lamps;
FIG. 5 is a diagram to explain a light diffuser according to a second
preferred embodiment;
FIGS. 6A and 6B are diagrams to explain a light diffuser according to a
third preferred embodiment;
FIGS. 7A and 7B are diagrams to explain a light diffuser according to a
fourth preferred embodiment;
FIG. 8 is a plan view illustrating one example of a light diffuser
according to a fifth preferred embodiment;
FIG. 9 is a plan view illustrating other example of the light diffuser of
the fifth preferred embodiment; and
FIG. 10 is a plan view illustrating still other example of the light
diffuser of the fifth preferred embodiment.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
Preferred embodiments of the present invention will be described in detail
by referring to the accompanying drawings.
1. First Preferred Embodiment
FIGS. 1 and 2 are side sectional views illustrating the configuration of a
thermal processing apparatus according to the present invention. This
thermal processing apparatus is an apparatus to perform thermal processing
of substrates, such as semiconductor wafers, by flash from xenon flash
lamps.
This thermal processing apparatus comprises a translucent plate 61, bottom
plate 62 and a pair of side plates 63 and 64, and it has in its inside a
chamber 65 that houses a semiconductor wafer W and performs its thermal
processing. The translucent plate 61 configuring an upper part of the
chamber 65 is, for example, composed of an infrared-transparent material
such as quartz, and it functions as a chamber window, through which the
light emitted from a light source 5 transmits and enters into the chamber
65. The bottom plate 62 configuring the chamber 65 is provided with a
support pin 70 that passes through a thermal diffuser 73 and heating plate
74, which will be described later, and also supports the semiconductor
wafer W from its lower surface.
The side plate 64 configuring the chamber 65 is provided with an opening
part 66 through which the semiconductor wafer W is loaded and unloaded.
The opening part 66 can be opened and closed by a gate valve 68 that
rotates about an axis 67. The semiconductor wafer W is loaded, with the
opening part 66 opened, into the chamber 65 by a transport robot (not
shown). When the semiconductor wafer W is subjected to thermal processing
in the chamber 65, the gate valve 68 closes the opening part 66.
The chamber 65 is disposed under the light source 5. The light source 5 has
a plurality of (specifically, 25 in this preferred embodiment) xenon flash
lamps 69 which are hereinafter simply referred to as "flash lamps 69" in
some cases, and a reflector 71. The flash lamps 69 are bar-like lamps
having a long cylindrical shape and are arranged in a plane and parallel
with one another such that their respective longitudinal directions are
along a horizontal direction. The reflector 71 is disposed above the flash
lamps 69 so as to cover all of them.
Each xenon flash lamp 69 has a glass tube filled with xenon gas, both ends
of which are respectively provided with an anode and cathode connected to
a condenser, and a trigger electrode that is wound around the peripheral
part of the glass tube. Xenon gas is electrically insulator and no current
flows in the glass tube in the normal state. However, when a high voltage
is applied to the trigger electrode in order to break insulation, the
current stored in the condenser flows momentarily in the glass tube, and
Joule heat generated at that time heats the xenon gas to emit light. In
the xenon flash lamp 69, electrostatic energy previously stored is
converted to extremely short optical pulses of 0.1 milliseconds to 10
milliseconds. Therefore, the flash lamp 69 has a characteristic feature
that it can irradiate extremely more intense light than a light source of
continuous lighting.
A light diffuser 72 is disposed between the light source 5 and translucent
plate 61 and diffuses lights emitted from the flash lamps 69. The light
diffuser 72 is obtainable by performing light diffusion processing of the
surface of a quartz glass that is infrared-transparent material. Its
detail will be described hereinafter.
Part of the light emitted from each flash lamp 69 passes directly through
the light diffuser 72 and translucent plate 61 into the chamber 65. Other
part of the light emitted from the flash lamp 69 is first reflected by the
reflector 71 and then passes through the light diffuser 72 and translucent
plate 61 into the chamber 65.
The heating plate 74 and thermal diffuser 73 are disposed in the chamber
65. The thermal diffuser 73 is adhered on an upper surface of the heating
plate 74. A pin 75 for preventing dislocation of the semiconductor wafer W
is provided on the surface of the thermal diffuser 73.
The heating plate 74 is used to preheat (i.e., assist heating) the
semiconductor wafer W. The heating plate 74 is made of aluminum nitride
and has in its inside a heater and a sensor for controlling the heater. On
the other hand, the thermal diffuser 73 is used to preheat uniformly the
semiconductor wafer W by diffusing thermal energy from the heating plate
74. As a material of the thermal diffuser 73, there can be used one that
has a relatively small thermal conductivity such as sapphire (Al.sub.2
O.sub.3, aluminum oxide) and quartz, etc.
It is configured such that a motor 40 drives the thermal diffuser 73 and
heating plate 74 to move up and down between loading and unloading
positions of the semiconductor wafer W that are shown in FIG. 1, and a
thermal processing position of the semiconductor wafer W that is shown in
FIG. 2.
Specifically, the heating plate 74 is connected via a cylindrical body 41
to a movable plate 42. A guide member 43 suspended from the bottom plate
62 of the chamber 65 guides the movable plate 42 so that it can move up
and down. A stationary plate 44 is fixed to a lower end part of the guide
member 43, and the motor 40 that drives a ball screw 45 to rotate is
disposed at a central part of the stationary plate 44. The ball screw 45
is screwed on a nut 48 that is connected via connecting members 46 and 47
to the movable plate 42. Thus, by the driving of the motor 40, the thermal
diffuser 73 and heating plate 74 can move up and down between the loading
and unloading positions and the thermal processing position.
The loading and unloading positions of the semiconductor wafer W shown in
FIG. 1 correspond to a position obtained when the thermal diffuser 73 and
heating plate 74 are lowered in order that the semiconductor wafer W to be
loaded through the opening part 66 by the transport robot (not shown) is
mounted on the support pin 70 and the semiconductor wafer W mounted on the
support pin 70 is unloaded through the opening part 66. In this state, the
upper end of the support pin 70 passes through each though hole formed in
the thermal diffuser 73 and heating plate 74, and then projects beyond the
surface of the thermal diffuser 73.
On the other hand, the thermal processing position of the semiconductor
wafer W shown in FIG. 2 corresponds to a position obtained when the
thermal diffuser 73 and heating plate 74 are raised above the upper end of
the support pin 70 in order to perform thermal processing of the
semiconductor wafer W. In the process that the thermal diffuser 73 and
heating plate 74 move up from the loading and unloading positions in FIG.
1 to the thermal processing position in FIG. 2, the semiconductor wafer W
mounted on the support pin 70 is received by the thermal diffuser 73, and
raised with its lower surface supported by the surface of the thermal
diffuser 73, and then held in a horizontal position at a location close to
the translucent plate 61 in the chamber 65. In contrast, in the process
that the thermal diffuser 73 and heating plate 74 move down from the
thermal processing position to the loading and unloading positions, the
semiconductor wafer W supported by the thermal diffuser 73 is delivered to
the support pin 70.
When the thermal diffuser 73 and the heating plate 74 that hold the
semiconductor wafer W are in the thermal processing position, the
translucent plate 61 is located between the semiconductor wafer W held by
them and the light source 5. Note that the distance between the thermal
diffuser 73 and light source 5 at that time is adjustable to any value by
controlling the amount of rotation of the motor 40.
Between the bottom plate 62 of the chamber 65 and the movable plate 42,
there is disposed an extensible bellows 77 that surrounds the periphery of
the cylindrical body 41 so as to maintain the chamber 65 in an airtight
state. The bellows 77 shrinks when the thermal diffuser 73 and heating
plate 74 have been raised to the thermal processing position, and it
extends when they have been lowered to the loading and unloading
positions, thereby separating the atmosphere of the chamber 65 from the
external atmosphere.
An introduction path 78 connected in communication to a switching valve 80
is formed in a side plate 63 that is disposed the opposite side of the
opening part 66 in the chamber 65. Through the introduction path 78, gas
required for processing such as inactive nitrogen gas is introduced into
the chamber 65. A discharge path 79 connected in communication to a
switching valve 81 is formed in the opening part 66 of the side plate 64.
The discharge path 79 is used to discharge the gas in the chamber 65 and
connected via the switching valve 81 to a discharge means (not shown).
In the thermal processing apparatus so configured, the light diffuser 72 is
a plate-like member that is located parallel to the arrangement of the
flash lamps 69 as the light source 5, and to the semiconductor wafer W
held at the thermal processing position by the thermal diffuser 73 and
heating plate 74 in the chamber 65. The flash lamps 69 are arranged along
a horizontal plane, and the semiconductor wafer W is held in the
horizontal position by the thermal diffuser 73, so that the light diffuser
72 is also disposed along the horizontal plane.
FIG. 3 is a diagram to explain the light diffuser 72 of the first preferred
embodiment. As described above, the light diffuser 72 is obtained by
performing light diffusion processing of the surface of a quartz glass
that is infrared-transparent material. Quartz is a desirable material for
the light diffuser 72 because it has heat resistance, high strength and
small optical attenuation factor. Synthetic quartz is more suitable than
fusion quartz because the former causes less optical attenuation of
ultraviolet region light that contributes to flash heating.
Referring to FIG. 3, the light diffuser 72 of the first preferred
embodiment is subjected to a variety of light diffusion processing. That
is, no light diffusion processing is performed to an end corresponding
part 72a of the light diffuser 72 that is located outside space in a
vertical immediate downward direction of the arrangement of the flash
lamps 69. On the other hand, a strong light diffusion processing and a
weak light diffusion processing are performed alternately so as to form a
stripe pattern with respect to a center corresponding part of the light
diffuser 72 that is located at space in a vertical immediate downward
direction of the arrangement of the flash lamps 69 (i.e., parts other than
the end corresponding part 72a). More specifically, the strong light
diffusion processing is performed to a lamp corresponding part 72b that is
located in a vertical immediate downward direction of each of the flash
lamps 69. The weak light diffusion processing is performed to an
inter-lamp corresponding part 72c located between the lamp corresponding
parts 72b adjacent to each other.
As a concrete method of the above-mentioned light diffusion processing,
there can be employed, for example, a combination of masking process and
blasting method. According to this combined method, firstly, a photoresist
(sensitive material) is applied to the entire surface of a light diffuser
72 to which no light diffusion processing is performed, followed by
exposure processing and development processing of a mask pattern, so that
only the inter-lamp corresponding part 72c is exposed and the rest is
covered with the photoresist. In this mask state, a surface processing is
performed with blasting method such as sandblasting, so that only the
inter-lamp corresponding part 72c is subjected to light diffusion
processing. In the sandblast processing of the inter-lamp corresponding
part 72c, abrasive having a relatively large particle size is used to
obtain the weak light diffusion processing.
Subsequently, after the above-mentioned photoresist is totally removed, a
photoresist is again applied to the entire surface of the light diffuser
72, followed by exposure processing and development processing of a mask
pattern different from the above, so that only the lamp corresponding part
72b is exposed and the rest is covered with the photoresist. Then, in this
mask state, a surface processing is performed again with blasting method
such as sandblasting, so that only the lamp corresponding part 72b is
subjected to light diffusion processing. In the sandblast processing of
the lamp corresponding part 72b, abrasive that has a smaller particle size
than that in the inter-lamp corresponding part 72c is used to obtain the
strong light diffusion processing. This results in the light diffuser 72
as shown in FIG. 3.
Through the foregoing light diffusion processing, the light transmittance
of light in the lamp corresponding part 72b subjected to the strong light
diffusion processing (strictly speaking, the transmittance of light
emitted from the flash lamps 69) is lower than the light transmittance of
the inter-lamp corresponding part 72c subjected to the weak light
diffusion processing. Further, the light transmittance of the end
corresponding part 72a not subjected to any light diffusion processing is
higher than that of the center corresponding part (i.e., the lamp
corresponding part 72b and inter-lamp corresponding part 72c). That is,
the light transmittance of the both ends of the light diffuser 72 is the
highest. Between the end parts, a high transmittance part and a low
transmittance part alternate with each other to form a stripe pattern.
The following is a thermal processing operation of a semiconductor wafer W
in the thermal processing apparatus so configured. The semiconductor wafer
W that is a processing object of the thermal processing apparatus is a
semiconductor wafer after being subjected to ion implantation.
In this thermal processing apparatus, in the state that the thermal
diffuser 73 and heating plate 74 are in the loading and unloading
positions of the semiconductor wafer W shown in FIG. 1, the semiconductor
wafer W is loaded through the opening part 66 by the transport robot (not
shown) and then mounted on the support pin 70. At the completion of the
loading of the semiconductor wafer W, the gate valve 68 closes the opening
part 66. Thereafter, the motor 40 drives the thermal diffuser 73 and
heating plate 74 to move up to the thermal processing position of the
semiconductor wafer W shown in FIG. 2, and then holds it in a horizontal
position. Also, the switching valves 80 and 81 are opened to form a gas
stream of nitrogen gas in the chamber 65.
The thermal diffuser 73 and heating plate 74 are preheated to a
predetermined temperature by the action of the heater contained in the
heating plate 74. Therefore, when the thermal diffuser 73 and heating
plate 74 are in the thermal processing position of the semiconductor wafer
W, the semiconductor wafer W is preheated by making contact with the
thermal diffuser 73 in its preheated state, so that the temperature of the
semiconductor wafer W increases gradually.
In this state, the semiconductor wafer W is continuously heated by the
thermal diffuser 73. During the time that the temperature of the
semiconductor wafer W is increasing, a temperature sensor (not shown)
always monitors whether the surface temperature of the semiconductor wafer
W reaches a preheating temperature T1 or not.
The preheating temperature T1 is, for example, about 200.degree. C. to
about 600.degree. C., preferably about 350.degree. C. to about 550.degree.
C. Even when the semiconductor wafer W is heated to the preheating
temperature T1 in this temperature range, the ions implanted into the
semiconductor wafer W do not diffuse.
Then, when the surface temperature of the semiconductor wafer W reaches the
preheating temperature T1, the flash lamps 69 light up to perform flash
heating. The lighting time of the flash lamps 69 in the flash heating step
is about 0.1 milliseconds to about 10 milliseconds. Thus, extremely
intense flash can be irradiated from the flash lamps 69 because the static
energy previously stored is converted to such short optical pulses.
The surface temperature of the semiconductor wafer W momentarily reaches
temperature T2 by the flash heating. Temperature T2 is about 1000.degree.
C. to about 1100.degree. C., which is required for ion activation
processing of the semiconductor wafer W. Elevating the temperature of the
surface of the semiconductor wafer W to the processing temperature T2 can
activate the ions implanted into the semiconductor wafer W.
In this case, the surface temperature of the semiconductor wafer W is
elevated to the processing temperature T2 in an extremely short time of
about 0.1 milliseconds to about 10 milliseconds, thereby completing the
activation of the ions in the semiconductor wafer W in a short period of
time. Therefore, the ions implanted into the semiconductor wafer W do not
diffuse, and it is possible to avoid the phenomenon that the profile of
the ions implanted into the semiconductor wafer W becomes gradual. Note
that since the time required for ion activation is extremely shorter than
the time required for ion diffusion, the ion activation is completed even
in such a short period of time, about 0.1 milliseconds to about 10
milliseconds, which is too short to cause diffusion.
Before the flash lamps 69 light up to heat the semiconductor wafer W, the
surface temperature of the semiconductor wafer W is already heated to the
preheating temperature T1 of about 200.degree. C. to about 600.degree. C.,
with the use of the heating plate 74. It is therefore possible to quickly
elevate the semiconductor wafer W to the processing temperature T2 of
about 1000.degree. C. to about 1100.degree. C., with the use of the flash
lamps 69.
After the flash heating step is terminated, the motor 40 drives the thermal
diffuser 73 and heating plate 74 to move down to the loading and unloading
positions of the semiconductor wafer W shown in FIG. 1, and the opening
part 66 that has been closed by the gate valve 68 is opened. Then, the
transport robot (not shown) unloads the semiconductor wafer W mounted on
the support pin 70. Thus, a sequence of the heat processing operation is
completed.
Although the thermal processing apparatus of the first preferred embodiment
includes the light diffuser 72 that has different types of transmittance
regions, it is now proposed to consider the case of executing flash
heating in the absence of the light diffuser 72. This will cause great
variations in illumination distribution on the semiconductor wafer W. FIG.
4 shows schematically the relationship between the illumination of light
emitted from the flash lamps 69 to the surface of the semiconductor wafer
W, and the position of the direction of arrangement of the flash lamps. In
FIG. 4, alphabetic character "A" represents the illumination distribution
on the semiconductor wafer W in the absence of the light diffuser 72. As
indicated by "A", nonuniformity of illumination distribution increases
when the semiconductor wafer W in the thermal processing position is close
to the light source 5 to some degree in the absence of the light diffuser
72.
In contrast, when the flash heating is performed in the presence of the
light diffuser 72, as in the thermal processing apparatus of the first
preferred embodiment, the light emitted from each of the flash lamps 69 is
diffused and directed to the semiconductor wafer W in the thermal
processing position, thereby relaxing nonuniformity of illumination
distribution on the semiconductor wafer W.
In the light diffuser 72 of the first preferred embodiment, since the end
corresponding part 72a has a higher light transmittance than the center
corresponding part, the light from the central part in which the flash
lamps 69 are arranged is diffused more intensely, so that in-plane
uniformity of illumination distribution on the semiconductor wafer W is
further improved.
In addition, since the light transmittance of the lamp corresponding part
72b is lower than that of the inter-lamp corresponding part 72c, the light
emitted from each of the flash lamps 69 in a vertical immediate downward
direction is diffused intensely, whereas the degree of light diffusion is
reduced at a location immediately below space between the adjacent flash
lamps 69. As the result, the in-plane uniformity of illumination
distribution on the semiconductor wafer W is further improved.
Thus, flash heating executed in the thermal processing apparatus with the
light diffuser 72 of FIG. 3 produces such an illumination distribution on
the semiconductor wafer W as represented by alphabetic character "B" in
FIG. 4, which shows an improved in-plane uniformity of illumination
distribution on the semiconductor wafer W, as compared to that represented
by alphabetic character "A."
2. Second Preferred Embodiment
The following is a second preferred embodiment of the present invention.
Except for the configuration of a light diffuser 72, a thermal processing
apparatus of the second preferred embodiment has the same configuration
and operation as the thermal processing apparatus of the first preferred
embodiment, and their details are omitted here.
FIG. 5 is a diagram to explain the light diffuser 72 of the second
preferred embodiment. The light diffuser 72 has the same arrangement and
material as the first preferred embodiment, except for the type of regions
to be subjected to light diffusion processing.
Referring to FIG. 5, a variety of light diffusion processing are performed
to the light diffuser 72 of this embodiment. That is, no light diffusion
processing is performed to an end corresponding part 72a of the light
diffuser 72 that is located outside space in a vertical immediate downward
direction of the arrangement of a plurality of flash lamps 69. Three-step
light diffusion processing is repeated so as to form a stripe pattern with
respect to a center corresponding part of the light diffuser 72 that is
located inside the end corresponding part 72a (i.e., parts other than the
end corresponding part 72a). Specifically, the strongest light diffusion
processing is performed to a lamp corresponding part 72b that is located
in a vertical immediate downward direction of each of the flash lamps 69.
The weakest light diffusion processing is performed to an inter-lamp
center corresponding part 72d that is located in the vicinity of the
center between lamp corresponding parts 72b adjacent to each other. The
medium light diffusion processing is performed to a transition region part
72e between the lamp corresponding part 72b and inter-lamp center
corresponding part 72d.
As a concrete method of the above-mentioned light diffusion processing,
there can be employed, for example, a combination of masking process and
blasting method, as in the first preferred embodiment. Three types of mask
patterns are successively formed, and abrasives having different particle
sizes are each separately used in three steps. This results in the light
diffuser 72 as shown in FIG. 5.
Here, a portion in direct contact with the inside of the end corresponding
part 72a is handled as an inter-lamp center corresponding part 72d, and
the space between the inter-lamp center corresponding part 72d and a lamp
corresponding part 72b located in a vertical immediate downward direction
of the endmost flash lamp 69 is handed as a transition region part 72e.
As the result of the foregoing light diffusion processing, the light
transmittance increases gradually from the central position of the lamp
corresponding part 72b to the inter-lamp center corresponding part 72d
(i.e., the central position of the inter-lamp corresponding part). Also,
the light transmittance decreases gradually from the end corresponding
part 72a to the lamp corresponding part 72b that is the most adjacent to
the part 72a (i.e., to the center corresponding part). Specifically, the
both end parts of the light diffuser 72 have the highest light
transmittance, and the location in a vertical immediate downward direction
of each of the flash lamps 69 has the lowest light transmittance, and
light transmittance changes gradually therebetween.
This configuration also provides the same effect as the first preferred
embodiment, and permits a finer adjustment of the degree of light
diffusion, thereby further improving the in-plane uniformity of
illumination distribution on the semiconductor wafer W.
3. Third Preferred Embodiment
The following is a third preferred embodiment of the present invention.
Except for the configuration of a light diffuser 172, a thermal processing
apparatus of the third preferred embodiment has the same configuration and
operation as the thermal processing apparatus of the first preferred
embodiment, and their details are omitted here.
FIGS. 6A and 6B are diagrams to explain the light diffuser 172 of the third
preferred embodiment. The light diffuser 172 has the same arrangement and
material as the first preferred embodiment, except that it is obtained by
laminating two light diffusers 172A and 172B.
Referring to FIG. 6A, no light diffusion processing is performed to an end
corresponding part 172a of the light diffuser 172A which is located
outside space in a vertical immediate downward direction of the
arrangement of a plurality of flash lamps 69. A strong light diffusion
processing is performed to a lamp corresponding part 172b that is located
in a vertical immediate downward direction of each of the flash lamps 69.
No light diffusion processing is performed to an inter-lamp corresponding
part 172c between lamp corresponding parts 172b adjacent to each other.
On the other hand, no light diffusion processing is performed to an end
corresponding part 172a of the light diffuser 172B that is located outside
space in a vertical immediate downward direction of the arrangement of the
flash lamps 69. No light diffusion processing is also performed to a lamp
corresponding part 172b that is located in a vertical immediate downward
direction of each of the flash lamps 69. A weak light diffusion processing
is performed to an inter-lamp corresponding part 172c between lamp
corresponding parts 172b adjacent to each other.
As a concrete method of the above-mentioned light diffusion processing,
there can be employed, for example, a combination of masking process and
blasting method, as in the first preferred embodiment. In the third
preferred embodiment, the light diffusers 172A and 172B can be
manufactured easily only by forming a single type of mask pattern,
respectively.
The light diffuser 172 shown in FIG. 6B is obtainable by laminating the two
light diffusers 172A and 172B. The light diffuser 172 is located parallel
to the arrangement of the flash lamps 69 and to the semiconductor wafer W
held at the thermal processing position, as in the first preferred
embodiment.
In the light diffuser 172 so configured, the light transmittance of the
lamp corresponding part 172b subjected to the strong light diffusion
processing is lower than that of the inter-lamp corresponding part 172c
subjected to the weak light diffusion processing. The light transmittance
of the end corresponding part 172a not subjected to any light diffusion
processing is higher than that of the center corresponding part. That is,
like the light diffuser 72 of the first preferred embodiment, the both end
parts of the light diffuser 172 have the highest light transmittance, and
a high transmittance part and a low transmittance part alternate with each
other between these end parts so as to form a stripe pattern.
This configuration also provides the same effect as the first preferred
embodiment, and it is relatively easy to manufacture the light diffusers
172A and 172B. In an alternative, there may be prepared a plurality of
light diffusers that can be manufactured with a single mask pattern, such
as the light diffusers 172A and 172B. A combination of these facilitates
manufacture of a light diffuser having a desired transmittance pattern.
4. Fourth Preferred Embodiment
The following is a fourth preferred embodiment of the present invention.
Except for the configuration of a light diffuser 172, a thermal processing
apparatus of the fourth preferred embodiment has the same configuration
and operation as the thermal processing apparatus of the first preferred
embodiment, and their details are omitted here.
FIGS. 7A and 7B are diagrams to explain the light diffuser 172 of the
fourth preferred embodiment. The light diffuser 172 has the same
arrangement and material as the light diffuser 72 of the first preferred
embodiment, except that it is obtained by laminating two light diffusers
172A and 172B, as in the third preferred embodiment.
Referring to FIG. 7A, a weak light diffusion processing is performed to the
entire surface of a light diffuser 172A. No light diffusion processing is
performed to an end corresponding part 172a of the light diffuser 172B
that is located outside space in a vertical immediate downward direction
of the arrangement of a plurality of flash lamps 69. A weak light
diffusion processing is performed to a lamp corresponding part 172b that
is located in a vertical immediate downward direction of each of the flash
lamps 69. No light diffusion processing is performed to an inter-lamp
corresponding part 172c between lamp corresponding parts 172b adjacent to
each other.
As a concrete method of the above-mentioned light diffusion processing,
there can be employed, for example, a combination of masking process and
blasting method, as in the first preferred embodiment. In the fourth
preferred embodiment, no mask pattern is required for the light diffuser
172A, and the light diffuser 172B can be manufactured easily only by
forming a single mask pattern.
The light diffuser 172 shown in FIG. 7B is obtainable by laminating the two
light diffusers 172A and 172B. The light diffuser 172 is located parallel
to the arrangement of the flash lamps 69 and to the semiconductor wafer W
held at the thermal processing position, as in the first preferred
embodiment.
In the light diffuser 172 so configured, the light transmittance of the
lamp corresponding part 172b at which the regions subjected to the light
diffusion processing are overlapped with each other is lower than that of
the inter-lamp corresponding part 172c. The light transmittance of the end
corresponding part 172a is higher than that of the lamp corresponding part
172b.
This configuration also provides the same effect as the first preferred
embodiment, and it is relatively easy to manufacture the light diffusers
172A and 172B. In an alternative, various types of light diffusers may be
combined properly to facilitate manufacture of a light diffuser having a
desired transmittance pattern, as in the third preferred embodiment.
5. Fifth Preferred Embodiment
The following is a fifth preferred embodiment of the present invention.
Except for the configuration of a light diffuser 72, a thermal processing
apparatus of the fifth preferred embodiment has the same configuration and
operation as the thermal processing apparatus of the first preferred
embodiment, and their details are omitted here.
FIG. 8 is a plan view illustrating one example of the light diffuser 72 of
the fifth preferred embodiment. In the fifth preferred embodiment, the
light diffuser 72 is a quartz glass plate in which such a geometrical
pattern in a ground glass state is formed in a region that is located
above parts other than an edge part of a semiconductor wafer W held by a
thermal diffuser 73 and heating plate 74 (hereinafter referred to as an
"inside part"). In the example of FIG. 8, a stripe pattern 91 in a ground
glass state is formed as a geometrical pattern.
As a method of forming the stripe pattern 91, there can be employed a
combination of masking process and blasting method, as in the first
preferred embodiment. That is, the light diffuser 72 of FIG. 8 is
obtainable by forming a mask pattern of a stripe pattern, followed by
blasting method with abrasive having a particle size of #400 or #600.
According to standard particle size criterion, the particle size of #400
indicates that a particle diameter of 50% points in cumulative height is
34.0.+-.2.0 .mu.m, and the particle size of #600 indicates that a particle
diameter of 50% points in cumulative height is 24.0.+-.1.5 .mu.m.
In the fifth preferred embodiment, the stripe pattern 91 in a ground glass
state is formed in a region of the surface of the light diffuser 72 which
is located immediately above the inside part of the semiconductor wafer W
held by the thermal diffuser 73 and heating plate 74. No light diffusion
processing is performed to a region in which there is no stripe pattern
91.
As described previously, there is a tendency that the illumination at the
edge part of the semiconductor wafer W is somewhat reduced than that of
the inside part. With the use of the light diffuser 72 of FIG. 8, the
illumination of the inside part of the semiconductor wafer W during the
time of flash heating is reduced depending on the ratio of the area of the
stripe pattern 91 in a region located above the inside part of the
semiconductor wafer W to the area of the rest in the same region. That is,
the illumination of the inside part of the semiconductor wafer W during
the time of flash heating decreases greatly with increasing the area of
the stripe pattern 91 in the region located above the inside part of the
semiconductor wafer W.
Therefore, the illumination distribution of the entire surface of the
semiconductor wafer W during the flash heating can be made uniform by
forming the stripe pattern 91 in an area ratio at which the illumination
of the inside part of the semiconductor wafer W is nearly as low as that
of the edge part.
Meanwhile, it is theoretically possible to make the inside part of the
semiconductor wafer W have approximately the same illumination as the edge
part by performing a weak ground glass processing (light diffusion
processing) to the entire region located above the inside part of the
semiconductor wafer W. However, such a weak ground glass processing is low
in industrial repeatability and unpractical. On the other hand, a strong
ground glass processing with abrasive having a particle size of #400 or
#600, as in the fifth preferred embodiment, is industrially stable, and
the ground glass state having the same surface roughness is realized at
high repeatability. According to the fifth preferred embodiment, the
illumination of the inside part of the semiconductor wafer W during flash
heating is adjusted precisely by adjusting, in an industrially stable
manner, the ratio of the area of the stripe pattern 91 in a region located
above the inside part of the semiconductor wafer W to the area of the rest
in the same region. The ground glass processing with abrasive of a
particle size of #400 provides about 1.16 .mu.m in mean surface roughness
(Ra). The ground glass processing with abrasive of a particle size of #600
provides about 0.36 .mu.m in mean surface roughness (Ra).
In the case that the stripe pattern 91 is directly projected on the
semiconductor wafer W, the uniformity of illumination distribution might
be impaired. The fifth preferred embodiment prevents the stripe pattern 91
being directly projected on the semiconductor wafer W by making the pitch
of the stripe pattern 91 smaller than the arrangement pitch of the flash
lamps 69.
6. Modifications
It should be noted that the present invention is not limited to the
foregoing preferred embodiments. Although in these embodiments, 25 flash
lamps 69 are employed as the light source 5, the number of flash lamps 69
may be determined at will.
The light diffuser 72 may be disposed at any position between the light
source 5 and the semiconductor wafer W held at the thermal processing
position.
The light diffuser 72 may be manufactured by processing a quartz glass so
as to contain a large number of fine pores, without limiting to a
combination of masking process and blasting method. Alternatively, air
blasting etc. may be used as blasting method. However, the use of masking
process permits more reliable manufacture of a plurality of regions having
different transmittances, as in the light diffusers of the foregoing
preferred embodiments.
The technique of the present invention is also applicable to a thermal
processing apparatus in which instead of the flash lamps 69, other type of
lamps (e.g., halogen lamps) are provided as the light source 5, and a
semiconductor wafer W is heated by light irradiation from the lamps. Also
in this case, the light emitted from each of the lamps and directed to a
vertical immediate downward direction is diffused intensely, while
reducing the degree of light diffusion in immediately below space between
the adjacent lamps, so that in-place uniformity of illumination
distribution on the semiconductor wafer W is further improved.
In the first to fourth preferred embodiments, a plurality of regions that
have different transmittances are formed in the light diffuser 72. In an
alternative, light diffusion processing may be performed such that the
entire surface of the light diffuser 72 has a uniform transmittance. Even
with this light diffuser 72, it is possible to diffuse the light that is
emitted from each of the lamps and then directed in a vertical immediate
downward direction. Therefore, the in-plane uniformity of illumination
distribution on the semiconductor wafer W can be improved than may be the
case of having no light diffuser 72. Especially, when employing flash
lamps as the light source 5, it is impossible to maintain in-plane
uniformity of illumination distribution by the rotation of the wafer, as
previously described. It is therefore significant to improve in-plane
uniformity of illumination distribution by the light diffuser 72.
The light diffuser 72 as shown in FIG. 9 or FIG. 10 may be used in the
fifth preferred embodiment. In the example of FIG. 9, a parallel crosses
pattern 92 in a ground glass state is formed in a region that is located
above the inside part of a semiconductor wafer W held by the thermal
diffuser 73 and heating plate 74. In the example of FIG. 10, a woven
bamboo pattern 93 in a ground glass state is formed in a region that is
located above the inside part of a semiconductor wafer W held by the
thermal diffuser 73 and heating plate 74. These patterns may be formed in
the same manner as in the fifth preferred embodiment.
Even with this configuration, the illumination distribution on the
semiconductor wafer W during flash heating can be made uniform by forming
the parallel crosses pattern 92 or woven bamboo pattern 93 in an area
ratio at which the illumination of the inside part of the semiconductor
wafer W is nearly as low as that of the edge part. Further, adjustment of
the area ratio of the parallel crosses pattern 92 or woven bamboo pattern
93 is accomplished in an industrially stable manner. That is, by forming a
geometrical pattern of a ground glass state in a region that is located
above the inside part of the semiconductor wafer W held by the thermal
diffuser 73 and heating plate 74, and then adjusting the ratio of the area
of the geometrical pattern in the same region to the area in which there
is no geometrical pattern, the illumination of the inside part of the
semiconductor wafer W becomes nearly as low as that of the edge part in
order to make uniform the illumination distribution on the semiconductor
wafer W during flash heating.
In an alternative, a geometrical pattern in a ground glass state may be
formed on the entire surface of the light diffuser 72, without limiting to
above the inside part of the semiconductor wafer W. Even with this
configuration, it is possible to diffuse light that is emitted from each
of the lamps and directed in a vertical immediate downward direction.
Therefore, the in-plane uniformity of illumination distribution on the
semiconductor wafer W can be improved than may be the case of having no
light diffuser 72. Especially, when employing flash lamps as the light
source 5, for the same reason as described above, it is significant to
improve in-plane uniformity of illumination distribution by the light
diffuser 72.
In each of the preferred embodiments, the heating plate 74 is used as
assist heating means. In an alternative, a plurality of lamps (e.g., a
plurality of halogen lamps)
